Zobrazeno 1 - 10 of 258 pro vyhledávání: '"Yasuyuki Miyamoto"'
1
Akademický článek
High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers
Autor: Junji Kotani, Kozo Makiyama, Toshihiro Ohki, Shiro Ozaki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Norikazu Nakamura, Yasuyuki Miyamoto
Publikováno v: Electronics Letters, Vol 59, Iss 4, Pp n/a-n/a (2023)
Abstract This paper investigated the back‐barrier (BB) effect for gallium nitride (GaN)‐based high‐electron‐mobility transistors with an Fe‐doped buffer and Fe‐buffer + Indium gallium nitride (InGaN)‐BB structure. The authors found that
Externí odkaz: https://doaj.org/article/e884dbfc5aef45eea2bf03ce48d6a2f8
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2
Akademický článek
A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-Gate MOSFETs
Autor: Seiko Netsu, Markus Hellenbrand, Cezar B. Zota, Yasuyuki Miyamoto, Erik Lind
Publikováno v: IEEE Journal of the Electron Devices Society, Vol 6, Pp 408-412 (2018)
We present a method for estimating the trap distributions on each of the surfaces in a multi-gate MOSFET. We perform I-V hysteresis measurements on InGaAs Tri-gate MOSFETs with various channel widths (25, 60, and 100 nm) from which top surface and si
Externí odkaz: https://doaj.org/article/21e1154ceff7449fb45e6ec8648ef290
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3
Akademický článek
Metal-Insulator-Semiconductor Field-Effect Transistors
Autor: Kuan-Wei Lee, Edward Yi Chang, Yeong-Her Wang, Pei-Wen Li, Yasuyuki Miyamoto
Publikováno v: Active and Passive Electronic Components, Vol 2013 (2013)
Externí odkaz: https://doaj.org/article/e3ac2acdc4b24b8b8448c995d54deb84
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6
Interspecific variation in wildlife responses to cattle, swine and chicken feed in the forests surrounding poultry farms
Autor: Shinsuke H, Sakamoto, Yasuyuki, Miyamoto, Rina, Ukyo, Seiji, Ieiri
Publikováno v: Journal of Veterinary Medical Science. 84:653-659
To strengthen farm biosecurity, wildlife behaviors around livestock environments require significant attention. Livestock feed is considered one of essential factors that attract wildlife to the livestock environment. We experimentally studied wildli
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::775cfa5ddeadf24ae18e4d40f8e77748
https://doi.org/10.1292/jvms.21-0627
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7
Dependence of Process Damage on GaN Channel Thickness in AlGaN/GaN High-electron-mobility Transistors with Back-barrier Layers
Autor: Yoshikaze Ito, Seita Tamai, Takuya Hoshi, Takahiro Gotow, Yasuyuki Miyamoto
Publikováno v: JPN. J. APPL. PHYS.. 62
In this study, AlGaN/GaN high-electron-mobility transistors with 65 and 38 nm channel layers and back-barrier layers were fabricated. The isolation process resulted in damage related to the thickness of the channel layer, which deteriorated propertie
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::adebd97e993af9469b2d2ae9fba8d9be
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100887487
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10
Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction
Autor: Yasuyuki Miyamoto, Shigeki Yoshida, Akihiro Hayasaka, Isao Makabe, Takahiro Gotow, Tomoya Aota
Publikováno v: Japanese Journal of Applied Physics. 60(SCCF06)
Electrodeless photo-assisted electrochemical etching was performed in an N-polar GaN high-electron-mobility transistor to obtain device isolation with a flat wet etching surface. The root mean square roughness of the surface after 30 nm etching was 3
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44d6615bc90bdb1f2419fb7eb494d8ad
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100845762
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