Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Yasuyuki Bessho"'
Publikováno v:
The Review of Laser Engineering. 21:305-311
A fundamental transverse mode, 200 mW high-power laser diode that oscillates at a wavelength of 860 nm for use as a light source for SHG devices has been developed. The maximum output power was 500 mW under CW operation. Stable operation under an out
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e99a07560e3b5b0785210283a7f7679e
https://doi.org/10.2184/lsj.21.2_305
https://doi.org/10.2184/lsj.21.2_305
Autor:
Yasuyuki Bessho, Yoshiki Murayama, K. Inoshita, T. Goto, T. Kunisato, Daijiro Inoue, Shingo Kameyama, Y. Nomura, Y. Kunoh
Publikováno v:
Conference on Lasers and Electro-Optics/International Quantum Electronics Conference.
We have succsessfully developed blue-violet laser diodes having the world's highest output power of 450mW by introducing a novel facet coating structure, reducing the internal loss in devices, and making a cavity length long.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3c4536cab75c01faadfcf689797f8f2
https://doi.org/10.1364/cleo.2009.cwf3
https://doi.org/10.1364/cleo.2009.cwf3
Publikováno v:
SPIE Proceedings.
High-power and low-noise characteristics are strongly required for blue-violet laser diodes in practical application to next generation optical disc systems. We have successfully fabricated blue-violet laser diodes meeting these requirements. These l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b0877023c79da9f3fc870d37ea6eaf3
https://doi.org/10.1117/12.562510
https://doi.org/10.1117/12.562510
Publikováno v:
SPIE Proceedings.
We have successfully fabricated blue-violet laser diodes, consisting of nitride-based semiconductors, with both high-power and low-noise characteristics on GaN substrates. These laser diodes have a ridge waveguide structure with a dielectric current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1669b9bb46faf0d806a70426e534736
https://doi.org/10.1117/12.533186
https://doi.org/10.1117/12.533186
Autor:
Koji Komeda, Atsushi Tajiri, K. Yodoshi, Norio Tabuchi, Koji Tominaga, Kimihide Minakuchi, Takao Yamaguchi, Yasuyuki Bessho, Yasuaki Inoue
Publikováno v:
Laser Diode Technology and Applications IV.
A highly reliable, 150 mW high-power semiconductor laser that oscillates at a wavelength of 860 nm has been developed. This device has a 0.7 jim thick p-cladding layer, a 900 jim long cavity length, and current-blocking regions near the cavity facets
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::548f58180f5ed158a1b0b0561de87486
https://doi.org/10.1117/12.59153
https://doi.org/10.1117/12.59153
Autor:
Koji Komeda, Koji Tominaga, Yasuaki Inoue, K. Yodoshi, Mori Kazushi, Norio Tabuchi, Kimihide Minakuchi, Atsushi Tajiri, Yasuyuki Bessho, Takao Yamaguchi
Publikováno v:
SPIE Proceedings.
Four-beam individually addressable monolithic A1GaAs laser-diode arrays havebeen developed in which each laser element can emit over 100 mW of output power in single-mode operation. The structural features of this laser include current-blockingregion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e23f80ba7c0a88a6eec31040b5edb21a
https://doi.org/10.1117/12.43823
https://doi.org/10.1117/12.43823
Autor:
K. Yodoshi, Koji Komeda, Tatsuhiko Niina, Mori Kazushi, Yasuaki Inoue, Kimihide Minakuchi, Norio Tabuchi, Yasuyuki Bessho, Takao Yamaguchi
Publikováno v:
SPIE Proceedings.
A 100 mW high-power AlGaAs laser with the current-blocking regions near the facets and a long cavity length has been developed. The length and the channel width of the current-blocking region, and cavity length were examined in order to obtain a high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::848e4b56da0c134381fbfe6211df36ff
https://doi.org/10.1117/12.18248
https://doi.org/10.1117/12.18248
Autor:
Ryoji Hiroyama, Teruaki Miyake, Minoru Sawada, Masayuki Shono, Yasuyuki Bessho, T. Ikegami, K. Yagi, S. Honda
Publikováno v:
Electronics Letters. 36:1284
650 nm band real refractive index-guided AlGaInP laser diodes with a strain-compensated MQW active layer have been successfully fabricated. A threshold current of 9 mA, which is the lowest ever reported was achieved and 5 mW operation was obtained up
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfdfe4c88c6db300b4d17920aafa90d3
https://doi.org/10.1049/el:20000907
https://doi.org/10.1049/el:20000907
Publikováno v:
Electronics Letters. 33:1084
High power 630 nm band AlGaInP laser diodes with a strain-compensated single quantum well active layer have been successfully fabricated. The highest output power achieved was 72 mW. High power operation of 30 mW was obtained at up to 75°C; reliable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a32e792caf1e39f91fc84a6ec86abbc
https://doi.org/10.1049/el:19970721
https://doi.org/10.1049/el:19970721
Autor:
Akira Ibaraki, T. Niina, Yasuyuki Bessho, Masayuki Shono, K. Yodoshi, T. Uetani, Ryoji Hiroyama, K. Komeda
Publikováno v:
Electronics Letters. 32:667
Self-pulsating 630 nm band AlGaInP laser diodes with a strain-compensated MQW active layer have been successfully developed. A low threshold current of 48 mA was achieved, and relative intensity noise (RIN) was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d11ea52d42f1aba5721b2f95426a8b37
https://doi.org/10.1049/el:19960457
https://doi.org/10.1049/el:19960457