Zobrazeno 1 - 10
of 391
pro vyhledávání: '"Yasuyuki, Miyamoto"'
Autor:
Junji Kotani, Kozo Makiyama, Toshihiro Ohki, Shiro Ozaki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Norikazu Nakamura, Yasuyuki Miyamoto
Publikováno v:
Electronics Letters, Vol 59, Iss 4, Pp n/a-n/a (2023)
Abstract This paper investigated the back‐barrier (BB) effect for gallium nitride (GaN)‐based high‐electron‐mobility transistors with an Fe‐doped buffer and Fe‐buffer + Indium gallium nitride (InGaN)‐BB structure. The authors found that
Externí odkaz:
https://doaj.org/article/e884dbfc5aef45eea2bf03ce48d6a2f8
Autor:
Yasuyuki Miyamoto, Kozo Makiyama
Publikováno v:
IEEE Transactions on Electron Devices. 70:2210-2215
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55bddf7b5524fb4ec472376800afe7d8
https://doi.org/10.1109/ted.2023.3253823
https://doi.org/10.1109/ted.2023.3253823
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 408-412 (2018)
We present a method for estimating the trap distributions on each of the surfaces in a multi-gate MOSFET. We perform I-V hysteresis measurements on InGaAs Tri-gate MOSFETs with various channel widths (25, 60, and 100 nm) from which top surface and si
Externí odkaz:
https://doaj.org/article/21e1154ceff7449fb45e6ec8648ef290
Autor:
Yasuyuki Miyamoto, Takahiro Gotow
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 142:348-353
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee38ca4f04480cc626f7a5e28131ad74
https://doi.org/10.1541/ieejeiss.142.348
https://doi.org/10.1541/ieejeiss.142.348
Publikováno v:
Journal of Veterinary Medical Science. 84:653-659
To strengthen farm biosecurity, wildlife behaviors around livestock environments require significant attention. Livestock feed is considered one of essential factors that attract wildlife to the livestock environment. We experimentally studied wildli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::775cfa5ddeadf24ae18e4d40f8e77748
https://doi.org/10.1292/jvms.21-0627
https://doi.org/10.1292/jvms.21-0627
Publikováno v:
JPN. J. APPL. PHYS.. 62
In this study, AlGaN/GaN high-electron-mobility transistors with 65 and 38 nm channel layers and back-barrier layers were fabricated. The isolation process resulted in damage related to the thickness of the channel layer, which deteriorated propertie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::adebd97e993af9469b2d2ae9fba8d9be
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100887487
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100887487
Publikováno v:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39c261095f7638717f32b0d68fd92ee7
https://doi.org/10.1109/bcicts53451.2022.10051695
https://doi.org/10.1109/bcicts53451.2022.10051695
Autor:
Takahiro Gotow, Yasuyuki Miyamoto
Publikováno v:
IEICE Transactions on Electronics. :304-307
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73a293f22580e9e91edc4eabaa04b4e3
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100830305
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100830305
Publikováno v:
Journal of Crystal Growth. 522:11-15
To realize further progress in the field of integrated circuits, a high mobility channel material, such as InGaAs for n-MOSFETs, with a multi-gate structure is desired. To realize high current densities in InGaAs MOSFETs, heavily doped sources/drains
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a91424a65634630e720fa04afbd3eabe
https://doi.org/10.1016/j.jcrysgro.2019.06.014
https://doi.org/10.1016/j.jcrysgro.2019.06.014
Autor:
Yasuyuki Miyamoto, Shigeki Yoshida, Akihiro Hayasaka, Isao Makabe, Takahiro Gotow, Tomoya Aota
Publikováno v:
Japanese Journal of Applied Physics. 60(SCCF06)
Electrodeless photo-assisted electrochemical etching was performed in an N-polar GaN high-electron-mobility transistor to obtain device isolation with a flat wet etching surface. The root mean square roughness of the surface after 30 nm etching was 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44d6615bc90bdb1f2419fb7eb494d8ad
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100845762
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100845762