Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Yasutoshi Nakagawa"'
Autor:
Tadashi Komagata, Yasutoshi Nakagawa, Daisuke Hara, Aki Fujimura, Ingo Bork, Kazuyuki Hagiwara, Taiichi Kiuchi
Publikováno v:
SPIE Proceedings.
In writing 22nm logic contacts with 193nm immersion, curvilinear sub-resolution assist features will be desirable on masks. Curvilinear sub-resolution assist features are good for high volume chips where the wafer volume outweighs considerations for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::380714b4cb67d2bda356269038e17442
https://doi.org/10.1117/12.864094
https://doi.org/10.1117/12.864094
Publikováno v:
SPIE Proceedings.
The metal 1 layer for the 22 nm logic node will require complex “wavy” shapes. These shapes are decorations on main features and require highly accurate printing in order to meet CD requirements. Despite attempts to reduce mask shot count by lini
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8f085796e58dc8969c2547ad2f4d32d
https://doi.org/10.1117/12.866971
https://doi.org/10.1117/12.866971
Publikováno v:
SPIE Proceedings.
The contact layer for the 22 nm logic node faces many technological hurdles. Even using techniques such as multiple-exposure patterning and 193 nm immersion, it will be difficult to achieve the depth of focus and CD uniformity required for 22 nm prod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad1ac56ca9dfcd0a8e85dba75245abe3
https://doi.org/10.1117/12.866413
https://doi.org/10.1117/12.866413
Publikováno v:
SPIE Proceedings.
As we prepare for 32nm-hp with 193nm immersion, complex and sometimes curvilinear shapes are going to be required on masks. Contacts and vias will be circular or oval in shape on the wafer, but are still drawn as over-sized squares or rectangles on m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a510650fbc7a5f792689eca42f73a726
https://doi.org/10.1117/12.866412
https://doi.org/10.1117/12.866412
Autor:
Hironobu Manabe, Osamu Wakimoto, Hiromichi Hoshi, Masaki Yamabe, Norihiko Samoto, Tadashi Komagata, Yasutoshi Nakagawa
Publikováno v:
SPIE Proceedings.
To extend the effectiveness of photo lithography, Optical Proximity Effect Correction (OPC) and Resolution Enhancement Technique (RET) incorporate increasingly complicated process steps, handling large volumes of data. This poses a challenge for mask
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec347e45e08c001f228560971a21d5dd
https://doi.org/10.1117/12.824312
https://doi.org/10.1117/12.824312
Publikováno v:
SPIE Proceedings.
This paper presents an experimental study of resist charging of mask blanks written with a variable shaped electron beam mask writer. Experiments were performed at a current density of 40 A/cm2 on mask blanks with a chemically amplified resist. Test
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92f12afb60063bebde0bae191ee6a8be
https://doi.org/10.1117/12.793076
https://doi.org/10.1117/12.793076
Publikováno v:
SPIE Proceedings.
This paper presents an experimental study of resist heating effect in mask making with a variable shaped electron beam mask writer. Experiments were performed at current densities of 40 and 80 A/cm 2 on mask blanks with a chemically amplified resist.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e79fdce7259daf48fb7e3bfd4517dd27
https://doi.org/10.1117/12.728984
https://doi.org/10.1117/12.728984
Publikováno v:
SPIE Proceedings.
The composite critical dimension (CD) and registration performance of a photomask is limited partly by systematic constituent mask lithography tool errors. Test masks can be designed specifically to isolate these error sources so they can be measured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb283130a947b54d35a575bdf23f468b
https://doi.org/10.1117/12.681748
https://doi.org/10.1117/12.681748
Publikováno v:
SPIE Proceedings.
We have developed a high alignment-accuracy electron beam (EB) mask writing processes of phase shift layer using alignment-and-height marks. The new process consists of (1) First layer writing with “alignment-and-height” marks on peripheral area
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e6238eeb43b004873b3b50fd1d9079f
https://doi.org/10.1117/12.557758
https://doi.org/10.1117/12.557758
Publikováno v:
SPIE Proceedings.
An electron beam mask writing system JBX-9000MV for 150- 180nm technology node masks was developed by JEOL Ltd. and its design concept, technologies introduced and results of initial evaluation were reported in 1998. We have improved this system to c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b94469323a3406e50d0b54529f6c0a1
https://doi.org/10.1117/12.438404
https://doi.org/10.1117/12.438404