Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Yasutoshi Kawaguchi"'
Publikováno v:
Journal of Electronic Materials. 38:538-544
High concentration (more than 1 × 1018 cm−3) of hydrogen atoms remaining in Mg-doped GaN epitaxial layers grown by metalorganic chemical vapor deposition even after conventional annealing in N2 ambient could induce degradation in GaN-based devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dab771795fdfe50e60468e8a4b3499e
https://doi.org/10.1007/s11664-009-0681-y
https://doi.org/10.1007/s11664-009-0681-y
Autor:
Toshiya Yokogawa, Yusuke Ueki, Akihiko Ishibashi, Kohzo Nakamura, Toshitaka Shimamoto, Tsunemasa Taguchi, Yasutoshi Kawaguchi, Yoichi Yamada, Gaku Sugahara
Publikováno v:
physica status solidi (b). 241:2730-2734
Structural properties of AlGaN layer on the GaN seed layer fabricated by air-bridged lateral epitaxial growth (ABLEG) have been studied by spatially resolved cathodoluminescence (CL) microscopy. The cross-sectional spatially resolved CL images of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40e11249a931a0a6b959a56e8e18b4dc
https://doi.org/10.1002/pssb.200405073
https://doi.org/10.1002/pssb.200405073
Autor:
Toshitaka Shimamoto, Gaku Sugahara, Atsunori Mochida, Yasutoshi Kawaguchi, Akihiko Ishibashi, Toshiya Yokogawa
Publikováno v:
physica status solidi (c). :2107-2110
A high quality AlGaN layer with low dislocation density and low c-axis tilt angle in wing regions was demonstrated by the advanced ELO technique, namely air-bridged lateral epitaxial growth. An underlying GaN seed layer was grooved along the 〈〉Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2dc666a9ec465ae213e0d032820b9e9
https://doi.org/10.1002/pssc.200303412
https://doi.org/10.1002/pssc.200303412
Autor:
Akihiko Ishibashi, Yasutoshi Kawaguchi, Tsunemasa Taguchi, Gaku Sugahara, Yoichi Yamada, Toshiya Yokogawa
Publikováno v:
physica status solidi (c). :2116-2119
We have systematically studied radiative and nonradiative recombination processes by time-resolved photoluminescence (TR-PL) measurements in InGaN based multiple quantum wells (MQWs) with various In content or Si doping conditions of barrier layers o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3c97249a5e211e49d2ed6e76141fd57
https://doi.org/10.1002/pssc.200303491
https://doi.org/10.1002/pssc.200303491
Publikováno v:
Japanese Journal of Applied Physics. 42:L1248-L1251
Two-dimensional deformations and stress distributions in air-bridged lateral-epitaxial-grown GaN (ABLEG-GaN) films have been studied by atomic force microscopy (AFM), two-dimensional finite element method (FEM) analysis, and micro-Raman spectroscopy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3151837aa547415460474f1435aedbca
https://doi.org/10.1143/jjap.42.l1248
https://doi.org/10.1143/jjap.42.l1248
Autor:
Wang Zg, H. Nagai, Kazumasa Hiramatsu, Nobuhiko Sawaki, Yasutoshi Kawaguchi, Qu Bz, Wan Sk, Sun Xh, Q. S. Zhu
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:838-841
Two Mg-doped GaN films with different doping concentrations were grown by a metalorganic chemical vapor deposition technique. Photoluminescence (PL) experiments were carried out to investigate the optical properties of these films. For highly Mg-dope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4287b6efc1c09bb7725742159d08c250
https://doi.org/10.1116/1.1575214
https://doi.org/10.1116/1.1575214
Autor:
Masahito Yamaguchi, Yoshio Honda, Shigeyasu Tanaka, Nobuhiko Sawaki, Yasutoshi Kawaguchi, Y. Ohtake
Publikováno v:
Journal of Crystal Growth. 230:346-350
Selective MOVPE growth of GaN microstructure on silicon substrates has been investigated using SiO2 mask having circular or stripe window. In case of (0 0 1)substrate, grooves with (1 1 1) facets at the sides were made by using the etching anisotropy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e13d20d7c6fa1a80a68368a92b04c9bb
https://doi.org/10.1016/s0022-0248(01)01244-1
https://doi.org/10.1016/s0022-0248(01)01244-1
Autor:
Kazumasa Hiramatsu, Kayo Horibuchi, Yasutoshi Kawaguchi, Kensuke Oki, Nobuhiko Sawaki, Noriyuki Kuwano
Publikováno v:
physica status solidi (a). 180:171-175
Cross-sectional transmission electron microscope (TEM) study has been carried out to reveal the microstructures in selective-area-growth (SAG) GaN, with special reference to the influences of carrier gas species and morphology of masks. The layers of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::064e8063311302c04df80c315ba47cee
https://doi.org/10.1002/1521-396x(200007)180:1<171::aid-pssa171>3.0.co
https://doi.org/10.1002/1521-396x(200007)180:1<171::aid-pssa171>3.0.co
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:261-267
Deep trap levels in a Mg-doped GaN grown by metalorganic vapor phase epitaxy are studied with deep level transient spectroscopy (DLTS). The Mg concentration of the sample was 4.8 x 10(19) cm(-3), but the hole concentration was as low as 1.3x10(17) cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::338317c3b0ff37ed5547b69a65520cb9
https://doi.org/10.1116/1.582144
https://doi.org/10.1116/1.582144
Publikováno v:
physica status solidi (a). 176:553-556
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f21eefe4e61ff3b9af434bb837c827a6
https://doi.org/10.1002/(sici)1521-396x(199911)176:1<553::aid-pssa553>3.0.co
https://doi.org/10.1002/(sici)1521-396x(199911)176:1<553::aid-pssa553>3.0.co