Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yasutomo Fujiyama"'
Publikováno v:
Journal of The Electrochemical Society. 142:3116-3122
A new bond and etchback silicon-on-insulator (SOI) has been proposed and demonstrated, in which epitaxial layers on porous Si are transferred by bonding and etching back porous Si. The key processes are epitaxial growth on porous Si and selective rem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2bf2d8b9b481af838f5888a49651aca
https://doi.org/10.1149/1.2048698
https://doi.org/10.1149/1.2048698
Publikováno v:
Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e026d9cbc313eefd1cf0a1fe7fab9fd
https://doi.org/10.7567/ssdm.1994.s-ii-3
https://doi.org/10.7567/ssdm.1994.s-ii-3
Autor:
Kiyofumi Sakaguchi, Kenji Yamagata, Yasutomo Fujiyama, Jun Nakayama, Takao Yonehara, Nobuhiko Sato
Publikováno v:
Japanese Journal of Applied Physics. 35:973
We report recent qualitative advances in bonding and etch-back of silicon on insulator (SOI) using structure-sensitive selective etching of porous Si. The defect density in the epitaxial layer grown on the porous Si is lowered to 3.5×102/cm2 by rais
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::deedaa32ec72b9f65109a020338f41c4
https://doi.org/10.1143/jjap.35.973
https://doi.org/10.1143/jjap.35.973
Publikováno v:
Japanese Journal of Applied Physics. 34:842
The etching characteristics of porous Si in comparison with bulk Si have been investigated for the ultra thin film (UTF) single etch-stop bond-and-etch-back silicon-on-insulator (BESOI). It is found out that porous Si can be selectively etched exclus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::921a222fe363d381875262fb96836140
https://doi.org/10.1143/jjap.34.842
https://doi.org/10.1143/jjap.34.842