Výsledky vyhledávání - "Yasuto Miyake"

Light extraction process in moth‐eye structure

Autor: Yasuto Miyake, S. Kamiyama, Hiroyuki Kinoshita, Isamu Akasaki, Motoaki Iwaya, Kentaro Nagamatsu, Hideki Kasugai, Hiromu Shiomi, Akira Honshio, Hiroshi Amano, Takeshi Kawashima, Kazuyoshi Iida

Publikováno v: physica status solidi c. 3:2165-2168

We theoretically calculated the light extraction efficiency of the light-emitting diodes (LEDs) with a moth-eye structure by rigorous coupled wave analysis (RCWA). The dependences of light extraction efficiency on aspect ratio and period were measure

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::05887284bbbf301646ca6ed31492422d
https://doi.org/10.1002/pssc.200565319

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Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate

Autor: Isamu Akasaki, Michinobu Tsuda, N. Tsuchiya, Motoaki Iwaya, Hiroshi Amano, Satoshi Kamiyama, Krishnan Balakrishnan, Kiyotaka Nakano, Masataka Imura, Yasuto Miyake, Y. Okadome, Akira Honshio

Publikováno v: Physica B: Condensed Matter. :491-495

High-quality ( 1 1 2 ¯ 0 ) GaN layers with atomically flat surface have been grown on a precisely offset-angle-controlled ( 1 1 ¯ 0 2 ) sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Insertion of AlGaN layer between underlying AlN

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e8dac78b3dd9425ffe8c6a8b8cd2598d
https://doi.org/10.1016/j.physb.2005.12.125

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UV laser diode with 350.9-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology

Autor: Hideki Kasugai, Kazuyoshi Iida, Motoaki Iwaya, Isamu Akasaki, Hiroshi Amano, Yasuto Miyake, Takeshi Kawashima, S. Mishima, S. Kamiyama, Akira Honshio

Publikováno v: IEEE Journal of Selected Topics in Quantum Electronics. 11:1069-1073

We have demonstrated a UV-laser diode with a lasing wavelength of 350.9 nm, which has a GaN-AlGaN multiquantum-well (MQW) active layer and was grown on low-dislocation-density Al/sub 0.18/Ga/sub 0.82/N template. The Al/sub 0.18/Ga/sub 0.82/N template

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d90f49bf1f041503f9427238c52e8e98
https://doi.org/10.1109/jstqe.2005.853743

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350.9 nm UV laser diode grown on sapphire substrate

Autor: Yasuto Miyake, Akira Honshio, Motoaki Iwaya, A. Miyazaki, Takeshi Kawashima, Kazuyoshi Iida, Isamu Akasaki, Hiroshi Amano, Hideki Kasugai, S. Mishima, S. Kamiyama

Publikováno v: physica status solidi (c). 2:2828-2831

The combination of a low-temperature-deposited AlN interlayer technology and lateral seeding epitaxy (Hetero-ELO) yielded crack-free and low-dislocation-density AlGaN. The AlGaN over the grooves has a dislocation density as low as 2 × 107 cm–2 due

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::22049d174de9eea948455f5ff684782a
https://doi.org/10.1002/pssc.200461399

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Laser diode of 350.9nm wavelength grown on sapphire substrate by MOVPE

Autor: Takeshi Kawashima, Yasuto Miyake, Isamu Akasaki, Motoaki Iwaya, A. Miyazaki, Kazuyoshi Iida, Akira Honshio, S. Mishima, Hideki Kasugai, Hiroshi Amano, Satoshi Kamiyama

Publikováno v: Journal of Crystal Growth. 272:270-273

We have developed GaN/AlGaN multi-quantum-well (MQW) UV-laser diode (UV-LD) grown on sapphire substrate. The combination of a low-temperature-deposited AlN interlayer technology and lateral seeding epitaxy yielded crack-free and low-dislocation-densi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8f48e0e4e788a2ed43df806f98dfe070
https://doi.org/10.1016/j.jcrysgro.2004.08.052

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High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE

Autor: Akira Honshio, Yasuto Miyake, Satoshi Kamiyama, Masataka Imura, Kazuyoshi Iida, Motoaki Iwaya, Takeshi Kawashima, Isamu Akasaki, Hideki Kasugai, Hiroshi Amano

Publikováno v: Journal of Crystal Growth. 272:377-380

To realize high-performance UV-light-emitting diodes (UV-LEDs), thick, crack-free and high-crystalline-quality AlGaN films with a low threading dislocation density and a device structure without any absorbing layer such as GaN are essential. Crack-fr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2f42bef168ef641489fe1e04c0961756
https://doi.org/10.1016/j.jcrysgro.2004.08.101

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