Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Yasuto, Miyake"'
Publikováno v:
Journal of Nuclear Science and Technology. 59:1536-1545
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::911a7305b6c7d098fd162f8b1d65aa09
https://doi.org/10.1080/00223131.2022.2072012
https://doi.org/10.1080/00223131.2022.2072012
Autor:
Angel T. Bautista VII, Sophia Jobien M. Limlingan, Miwako Toya, Yasuto Miyake, Kazuho Horiuchi, Hiroyuki Matsuzaki, Yoshinori Iizuka
Publikováno v:
Science of The Total Environment. 887:164021
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d8cd741e7cbd0a7bf9ff07d732f0497
https://doi.org/10.1016/j.scitotenv.2023.164021
https://doi.org/10.1016/j.scitotenv.2023.164021
Publikováno v:
Journal of environmental radioactivity.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5eba8badefa102ec563ccd6705403cce
https://pubmed.ncbi.nlm.nih.gov/29331558
https://pubmed.ncbi.nlm.nih.gov/29331558
Autor:
Hiroki Okuno, Toru Sasaki, Shinichi Namba, Kazumasa Takahashi, Yasuto Miyake, Takashi Kikuchi, Mamoru Takahashi, Naoya Ikoma
Publikováno v:
Plasma and Fusion Research. 14:1206148-1206148
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84d68c5bf7226287a808a83f23b63aef
https://doi.org/10.1585/pfr.14.1206148
https://doi.org/10.1585/pfr.14.1206148
Autor:
Yasuto Miyake, S. Kamiyama, Hiroyuki Kinoshita, Isamu Akasaki, Motoaki Iwaya, Kentaro Nagamatsu, Hideki Kasugai, Hiromu Shiomi, Akira Honshio, Hiroshi Amano, Takeshi Kawashima, Kazuyoshi Iida
Publikováno v:
physica status solidi c. 3:2165-2168
We theoretically calculated the light extraction efficiency of the light-emitting diodes (LEDs) with a moth-eye structure by rigorous coupled wave analysis (RCWA). The dependences of light extraction efficiency on aspect ratio and period were measure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05887284bbbf301646ca6ed31492422d
https://doi.org/10.1002/pssc.200565319
https://doi.org/10.1002/pssc.200565319
Autor:
Isamu Akasaki, Michinobu Tsuda, N. Tsuchiya, Motoaki Iwaya, Hiroshi Amano, Satoshi Kamiyama, Krishnan Balakrishnan, Kiyotaka Nakano, Masataka Imura, Yasuto Miyake, Y. Okadome, Akira Honshio
Publikováno v:
Physica B: Condensed Matter. :491-495
High-quality ( 1 1 2 ¯ 0 ) GaN layers with atomically flat surface have been grown on a precisely offset-angle-controlled ( 1 1 ¯ 0 2 ) sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Insertion of AlGaN layer between underlying AlN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8dac78b3dd9425ffe8c6a8b8cd2598d
https://doi.org/10.1016/j.physb.2005.12.125
https://doi.org/10.1016/j.physb.2005.12.125
Autor:
Hideki Kasugai, Kazuyoshi Iida, Motoaki Iwaya, Isamu Akasaki, Hiroshi Amano, Yasuto Miyake, Takeshi Kawashima, S. Mishima, S. Kamiyama, Akira Honshio
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 11:1069-1073
We have demonstrated a UV-laser diode with a lasing wavelength of 350.9 nm, which has a GaN-AlGaN multiquantum-well (MQW) active layer and was grown on low-dislocation-density Al/sub 0.18/Ga/sub 0.82/N template. The Al/sub 0.18/Ga/sub 0.82/N template
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d90f49bf1f041503f9427238c52e8e98
https://doi.org/10.1109/jstqe.2005.853743
https://doi.org/10.1109/jstqe.2005.853743
Autor:
Yasuto Miyake, Akira Honshio, Motoaki Iwaya, A. Miyazaki, Takeshi Kawashima, Kazuyoshi Iida, Isamu Akasaki, Hiroshi Amano, Hideki Kasugai, S. Mishima, S. Kamiyama
Publikováno v:
physica status solidi (c). 2:2828-2831
The combination of a low-temperature-deposited AlN interlayer technology and lateral seeding epitaxy (Hetero-ELO) yielded crack-free and low-dislocation-density AlGaN. The AlGaN over the grooves has a dislocation density as low as 2 × 107 cm–2 due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22049d174de9eea948455f5ff684782a
https://doi.org/10.1002/pssc.200461399
https://doi.org/10.1002/pssc.200461399
Autor:
Takeshi Kawashima, Yasuto Miyake, Isamu Akasaki, Motoaki Iwaya, A. Miyazaki, Kazuyoshi Iida, Akira Honshio, S. Mishima, Hideki Kasugai, Hiroshi Amano, Satoshi Kamiyama
Publikováno v:
Journal of Crystal Growth. 272:270-273
We have developed GaN/AlGaN multi-quantum-well (MQW) UV-laser diode (UV-LD) grown on sapphire substrate. The combination of a low-temperature-deposited AlN interlayer technology and lateral seeding epitaxy yielded crack-free and low-dislocation-densi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f48e0e4e788a2ed43df806f98dfe070
https://doi.org/10.1016/j.jcrysgro.2004.08.052
https://doi.org/10.1016/j.jcrysgro.2004.08.052
Autor:
Akira Honshio, Yasuto Miyake, Satoshi Kamiyama, Masataka Imura, Kazuyoshi Iida, Motoaki Iwaya, Takeshi Kawashima, Isamu Akasaki, Hideki Kasugai, Hiroshi Amano
Publikováno v:
Journal of Crystal Growth. 272:377-380
To realize high-performance UV-light-emitting diodes (UV-LEDs), thick, crack-free and high-crystalline-quality AlGaN films with a low threading dislocation density and a device structure without any absorbing layer such as GaN are essential. Crack-fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f42bef168ef641489fe1e04c0961756
https://doi.org/10.1016/j.jcrysgro.2004.08.101
https://doi.org/10.1016/j.jcrysgro.2004.08.101