Zobrazeno 1 - 10
of 205
pro vyhledávání: '"Yasuto, Hijikata"'
Publikováno v:
Applied Physics Express, Vol 17, Iss 9, p 095001 (2024)
In this study, the Seebeck coefficient of a single-walled carbon nanotube (SWCNT) was evaluated using a nitrogen vacancy center in nanodiamonds as a thermometer. A temperature gradient was established across the SWCNT, and the temperatures of the nan
Externí odkaz:
https://doaj.org/article/adbbbb87fdc94a19889af00606747020
Publikováno v:
physica status solidi (a).
Autor:
Shu Motoki, Shin-ichiro Sato, Seiichi Saiki, Yuta Masuyama, Yuichi Yamazaki, Takeshi Ohshima, Koichi Murata, Hidekazu Tsuchida, Yasuto Hijikata
Publikováno v:
Journal of Applied Physics. 133:154402
Negatively charged silicon vacancy (VSi−) defects in silicon carbide are expected to be used for magnetic sensors under harsh environments, such as space and underground due to their structural stability and potential for high-fidelity spin manipul
Autor:
Shu, Motoki, Shinichiro, Sato, Yuta, Masuyama, Yuichi, Yamazaki, Seiichi, Saiki, Yasuto, Hijikata, Takeshi, Ohshima
Silicon vacancies (Vsi) in silicon carbide (SiC) have attracted attention because they can be used for quantum sensors (F. Fuchs et al., Nat. Com. 6: 7578 (2015)). We aim to develop Vsi magnetic sensors operating at high temperatures because of its s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::99e535a6a013a6495cbb4a6520d6d368
https://repo.qst.go.jp/records/86358
https://repo.qst.go.jp/records/86358
Autor:
Akinori Takeyama, Takahiro Makino, Shuichi Okubo, Yuki Tanaka, Toru Yoshie, Yasuto Hijikata, Takeshi Ohshima
Publikováno v:
Materials, Vol 12, Iss 17, p 2741 (2019)
Silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) are expected as power electronic devices for high radiative conditions, including nuclear plants and space. Radiation response of commercial-grade prototype SiC MOSFET
Externí odkaz:
https://doaj.org/article/888b4f039ec949b39f62894770b38ae0
Autor:
Tetta Suzuki, Yuichi Yamazaki, Takashi Taniguchi, Kenji Watanabe, Yusuke Nishiya, Yu-ichiro Matsushita, Kazuya Harii, Yuta Masuyama, Yasuto Hijikata, Takeshi Ohshima
Publikováno v:
Applied Physics Express. 16:032006
Negatively charged boron vacancy (V B –) in hexagonal boron nitride has attracted attention as a promising spin defect for quantum sensing applications. Hence, a fabrication method for generation of V B – with superior spin properties would be de
Autor:
Shinichiro, Sato, Yuta, Masuyama, Yuichi, Yamazaki, Seiichi, Saiki, Yasuto, Hijikata, Takeshi, Ohshima, Shu, Motoki
炭化ケイ素(SiC)中のシリコン空孔(VSi)は磁気や温度を高感度に検出する「量子センサ」として注目されており、特に、VSiは高温下でも安定して存在するため、宇宙や地底といった厳環境に
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::d129278888e0757a67f47de3da3bfe2a
https://repo.qst.go.jp/records/85128
https://repo.qst.go.jp/records/85128
Autor:
Takeshi Ohshima, Kazutoshi Kojima, Yasuto Hijikata, Shin-ichiro Sato, Yuichi Yamazaki, Takuma Narahara
Publikováno v:
Materials Science Forum. 1004:349-354
Spin defects of which states can be manipulated in Silicon Carbide (SiC) have drawn considerable attention because of their applications to quantum technologies. The single negatively-charged pairs of VSi and nitrogen atom (N) on an adjacent C site (
Autor:
Yuichi Yamazaki, Yasuto Hijikata, Shin-ichiro Sato, Takahiro Satoh, Takahiro Makino, Yoji Chiba, Takeshi Ohshima, Naoto Yamada
Publikováno v:
Materials Science Forum. 1004:337-342
We demonstrated the enhancement of the optically detected magnetic resonance (ODMR) contrast of negatively charged silicon vacancy (VSi-) in SiC by thermal treatment. To create high density VSi-, Proton Beam Writing (PBW) was conducted. After an anne