Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Yasushi Nishiyama"'
Publikováno v:
Doboku Gakkai Ronbunshuu F. 66:490-503
高堰堤式落差工の存在は,多くの場合,魚類の遡上や降下を妨げ,瀬や淵の環境を失わせてきた.著者らはこの問題を改善するため,渓流に見られる天然段差をモデルに,福岡県岩岳川
Publikováno v:
SPIE Proceedings.
To satisfy the requirement on the image placement accuracy, it is very important to consider the stress of the films on the mask substrate. The stress of the EUV mask is much larger than several kinds of optical masks because reflective Mo/Si multila
Publikováno v:
TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series A. 62:299-305
Ni-NiO composites with different NiO contents were fabricated by a conventional PM method. Nickel oxide particles, which were selected as dispersoids, were embedded in nickel matrix. Tensile tests were conducted on the composites containing up to 9 w
Publikováno v:
SPIE Proceedings.
The required measurement precision for multilayered EUV mask metrology is set below 0.4 nm three sigma. In addition to limited precision of CD-SEM, there are fundamental physical factors that deteriorate the accuracy of the measurements, the most imp
Autor:
Tsutomu Murakawa, Soichi Shida, Takayuki Nakamura, Hidemitsu Hakii, Jun Matsumoto, Yasushi Nishiyama, Keishi Tanaka, Isao Yonekura, Masayuki Kuribara, Kenji Komoto, Mitsuo Hiroyama, Toshimichi Iwai
Publikováno v:
SPIE Proceedings.
As feature sizes of semiconductor device structures have continuously decreased, needs for metrology tools with high precision and excellent linearity over actual pattern sizes have been growing. And it has become important to measure not only two-di
Autor:
Isao Yonekura, Takayuki Nakamura, Jun Matsumoto, Hidemitsu Hakii, Tsutomu Murakawa, Yasushi Nishiyama, Masayuki Kuribara, Keishi Tanaka, Hiroshi Fukaya, Yasutaka Kikuchi, Toshimichi Iwai, Masashi Kawashita, Soichi Shida
Publikováno v:
SPIE Proceedings.
A new metrology method for CD-SEM has been developed to measure the side wall angle of a pattern on photomask. The height and edge width of pattern can be measured by the analysis of the signal intensity profile of each channel from multiple detector
Publikováno v:
SPIE Proceedings.
Influence of the prominent charging effect on the precision of measuring EUV mask features using CD-SEM was studied. The dimensions of EUV mask features continuously measured by CD-SEM gradually varied because of the charging. The charging effect on
Autor:
Takayuki Nakamura, Yasushi Nishiyama, Jun Matsumoto, Tsutomu Murakawa, Toshimichi Iwai, Hidemitsu Hakii, Yasutaka Kikuchi, Masayuki Kuribara, Keishi Tanaka, Isao Yonekura, Masashi Kawashita, Soichi Shida
Publikováno v:
SPIE Proceedings.
The Multiple Detector CD-SEM acquires the secondary electron from pattern surface at each detector. The 3D shape and height of mask patterns are generated by adding or subtracting signal profile of each detector. In signal profile of the differential
Autor:
Osamu Suga, Yukiyasu Arisawa, Kenichi Takahara, Hideaki Hashimoto, Tsuyoshi Amano, Nobutaka Kikuiri, Ryoichi Hirano, Kinya Usuda, Hiroyuki Shigemura, Yasushi Nishiyama
Publikováno v:
SPIE Proceedings.
In this paper, we will report on our experimental and simulation results on the impact of EUVL mask absorber structure and of inspection system optics on mask defect detection sensitivity. We employed a commercial simulator EM-Suite (Panoramic Techno
Autor:
Anto Yasaka, Yasushi Nishiyama, Hiroyuki Shigemura, Hiroshi Mohri, Kensuke Shiina, Osamu Suga, Tsuyoshi Amano, Tsuneo Terasawa, Tsukasa Abe, Fumio Aramaki
Publikováno v:
SPIE Proceedings.
We evaluated a FIB-CVD (Focused Ion Beam-Chemical Vapor Deposition) process for repairing clear defects on EUV masks. For the CVD film, we selected Carbon material. Our simulation result showed that the properties of wafer-prints depended on the dens