Enhancement of InN Luminescence by Introduction of Graphene Interlayer

Autor: Darius Dobrovolskas, Shingo Arakawa, Shinichiro Mouri, Tsutomu Araki, Yasushi Nanishi, Jūras Mickevičius, Gintautas Tamulaitis

Publikováno v: Nanomaterials, Vol 9, Iss 3, p 417 (2019)

Indium nitride (InN) luminescence is substantially enhanced by the introduction of a multilayer graphene interlayer, mitigating the lattice mismatch between the InN epilayer and the Gallium nitride (GaN) template on a sapphire substrate via weak van

Externí odkaz: https://doaj.org/article/8a01ee7a9ed64dfc86bc3b6b15f118a6

Plasma-excited MBE—proposal and achievements through R&D of compound semiconductor materials and devices

Autor: Tomohiro Yamaguchi, Yasushi Nanishi

Publikováno v: Japanese Journal of Applied Physics. 61:SA0810

This paper reviews the 35 years of history of plasma-excited MBE, focusing on the special value added to conventional MBE through the usage of plasma-excited molecular beams. These advantages include low-temperature surface cleaning, low-temperature

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b78ce6465aa2681ab9e5cf534a0b746e
https://doi.org/10.35848/1347-4065/ac3d0c

Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy.

Autor: Masataka Imura, Shunsuke Tsuda, Takahiro Nagata, Banal, Ryan G., Hideki Yoshikawa, AnLi Yang, Yoshiyuki Yamashita, Keisuke Kobayashi, Yasuo Koide, Tomohiro Yamaguchi, Masamitsu Kaneko, Nao Uematsu, Ke Wang, Tsutomu Araki, Yasushi Nanishi

Publikováno v: Journal of Applied Physics; 2017, Vol. 121 Issue 9, p1-5, 5p, 6 Graphs

Enhancement of InN luminescence by introduction of graphene interlayer

Autor: Yasushi Nanishi, Tsutomu Araki, Shinichiro Mouri, Gintautas Tamulaitis, D. Dobrovolskas, Jūras Mickevičius, Shingo Arakawa

Publikováno v: Nanomaterials, Basel : MDPI, 2019, vol. 9, iss. 3, art. no. 417, p. [1-8]
Nanomaterials
Volume 9
Issue 3
Nanomaterials, Vol 9, Iss 3, p 417 (2019)

Indium nitride (InN) luminescence is substantially enhanced by the introduction of a multilayer graphene interlayer, mitigating the lattice mismatch between the InN epilayer and the Gallium nitride (GaN) template on a sapphire substrate via weak van

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c005ee7989aa26d047ac410cbea478d
https://repository.vu.lt/VU:ELABAPDB42518416&prefLang=en_US

InN nanocolumns grown by molecular beam epitaxy and their luminescence properties

Autor: Euijoon Yoon, Yen-Ting Chen, Tsutomu Araki, Tomohiro Yamaguchi, Ke Wang, Yasushi Nanishi

Publikováno v: Journal of Crystal Growth. 430:93-97

InN nanocolumns (NCs) without vertical diameter variation have been grown on GaN templates by molecular beam epitaxy. Growth temperature is the key parameter to obtain such shaped InN NCs. The density and surface distribution can be controlled by the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::818a8bd069536b3b10aaaa3eee73abbe
https://doi.org/10.1016/j.jcrysgro.2015.07.027