Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Yasuo Okuno"'
Autor:
Hisahiro Inoue, Tsutao Katayama, Eiichi Aoyama, Yasuo Okuno, Munehisa Gunjima, Toshiki Hirogaki, Hiromichi Nobe
Publikováno v:
TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series C. 65:382-388
This study describes the damage around the drilled hole wall in small diameter drilling of GFRP for a printed wiring board in order to prevent from ion migration. In the present report, investigation was carried out from the view of the relative posi
Publikováno v:
Journal of Crystal Growth. 171:39-44
The stoichiometry of grown ZnSe crystals was controlled by using the source crystal pre-annealed under an optimum Zn vapor pressure for Se Te solvent, or an optimum Se vapor pressure for Zn solvent. The full width at half maximum (FWHM) value of the
Publikováno v:
Journal of Electronic Materials. 23:835-838
Our report describes a newly developed chemical etchant suitable for producing mirror-like ZnSe surfaces. A mirror surface without any scratch obtained through lapping and polishing was produced by etching in a KMnO4(100 mg)/ H2SO4(10 ml)/H2O(40 ml)
Publikováno v:
Journal of the Japan Society of Powder and Powder Metallurgy. 41:57-62
Publikováno v:
Journal of Applied Physics. 74:6133-6138
Experiments which led to the growth of a ZnSe layer suitable for a blue‐light‐emitting diode are presented. The ZnSe epitaxial layer was obtained by the solution growth method and, in the process, the electrical and optical properties of the ZnSe
Publikováno v:
Journal of Electronic Materials. 22:685-688
Crystallographic quality and the lattice constant of ZnSe crystals grown from Te/ Se solutions by the temperature gradient solution growth method were evaluated by using a high resolution x-ray diffractometer. The full width at half maximum of the x-
Publikováno v:
Journal of the Japan Society of Powder and Powder Metallurgy. 40:449-454
Hard BN films with cubic BN (c-BN) phase and soft BN films without c-BN phase were deposited on Si wafer by a reactive ion plating process with a hot cathode plasma discharged within parallel magnetic field. These BN films were left in air with relat
Publikováno v:
Journal of the Japan Society of Powder and Powder Metallurgy. 38:31-34
The effect of VC on mechanical properties of sintered high speed steel(PX16; equivalent for SKH51) made from water atomized powder has been studied. The mechanical properties such as transverse rupture strength and microvickers hardness have been mea
Publikováno v:
MTT-S International Microwave Symposium Digest.
The Tunnel injection transit time (Tunnett) diode operates in higher frequency region and with lower noise level than that of the Impatt diode. In thin carrier generating region, the tunnel injection which depends steeply on the electric field intens
Publikováno v:
Applied Physics Letters. 60:3274-3276
Bulklike ZnSe crystal with crystallographic quality the same as commercial GaAs can be grown at a growth temperature of 950 °C by the solution growth method. The growth rate of the crystal depends on the temperature gradient in the solvent, the leng