Zobrazeno 1 - 10 of 70 pro vyhledávání: '"Yasuo Ohba"'
1
Low current operation of GaN-based blue-violet laser diodes fabricated on sapphire substrate using high-temperature-grown single-crystal AlN buffer layer
Autor: Yasuo Ohba, Toru Gotoda, Kei Kaneko
Publikováno v: Journal of Crystal Growth. 298:682-686
Low current laser operation at 405 nm has been demonstrated for the first time for the devices fabricated on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) using a high-temperature-grown single-crystal AlN buffer. The thick opt
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::038935d83e32afc6239aa5ec6c18710e
https://doi.org/10.1016/j.jcrysgro.2006.10.090
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2
Room-temperature operation of GaN-based blue-violet laser diodes fabricated on sapphire substrates using high-temperature-grown single-crystal AlN buffer layers
Autor: Susumu Iida, Yasuo Ohba
Publikováno v: physica status solidi (a). 200:126-130
The laser operation has been demonstrated for the first time for the test devices fabricated on GaN layers grown on sapphire substrates by metalorganic chemical vapor deposition using high-temperature-grown single-crystal AlN buffer layers (HT-AlN bu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::45301dc56185567fb01ab0129b5f9f74
https://doi.org/10.1002/pssa.200303288
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3
Mechanism for Reducing Dislocations at the Initial Stage of GaN Growth on Sapphire Substrates Using High-Temperature-Grown Single-Crystal AlN Buffer Layers
Autor: Susumu Iida, Yasuo Ohba
Publikováno v: Japanese Journal of Applied Physics. 41:L615-L618
The initial stage of GaN metalorganic chemical vapor deposition on high-temperature grown AlN (HT-AlN) was studied. A clear three-dimensional island growth was observed. At the first growth phase, the islands rapidly grew and coalesced forming a non-
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::40d56c5cadeb9967c0d5e70a2885ccbe
https://doi.org/10.1143/jjap.41.l615
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5
Growth of AlN on sapphire substrates by using a thin AlN buffer layer grown two-dimensionally at a very low V/III ratio
Autor: R Sato, Yasuo Ohba
Publikováno v: Journal of Crystal Growth. 221:258-261
Metalorganic chemical vapor deposition (MOCVD) growth of AlN on sapphire substrates was investigated to realize pit-free smooth surfaces. Growth conditions were optimized using two-step growth technique, in which the first-step growth was done at a l
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::556b08044f600a930156d6859eb48d15
https://doi.org/10.1016/s0022-0248(00)00695-3
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6
Mechanism for bone invasion of oral cancer cells mediated by interleukin‐6 in vitro and in vivo
Autor: Masato Okamoto, Kenji Hiura, Tetsuya Oshikawa, Kunihoro Terai, Yasuo Ohba, Keiji Moriyama, Mitsunobu Sato, Hideo Yoshida, Hidetomo Nishikawa, Sachiko Furuichi, Go Ohe
Publikováno v: Cancer. 89:1966-1975
BACKGROUND. Osteoclastic bone resorption is an important step in bone invasion in several malignancies. Although interleukin (IL)-6 accelerates osteoclastic bone resorption, it remains unclear whether IL-6 may be involved in bone invasion of oral can
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3305cbd89c1971304245efad162cbeb
https://doi.org/10.1002/1097-0142(20001101)89:9<1966::aid-cncr13>3.0.co
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7
Expression of cathepsin K mRNA during experimental tooth movement in rat as revealed by in situ hybridization
Autor: Kunihiro Terai, Yasuo Ohba, Keiji Moriyama, Tomoko Ohba
Publikováno v: Archives of Oral Biology. 45:63-69
The expression of cathepsin K. a novel collagenolytic enzyme specifically expressed in osteoclasts, was investigated in the rat maxillary dentoalveolar unit during experimental tooth movement by in situ hybridization histochemistry with a non-radiois
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::afa3e3d4ed09296f7ef1f43c4e357926
https://doi.org/10.1016/s0003-9969(99)00104-1
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8
Structure-Based Development of Pyridoxal Propionate Derivatives as Specific Inhibitors of Cathepsin K in Vitro and in Vivo
Autor: Yasuo Ohba, A. Matsui, Dušan Turk, T. Asao, Hisao Kakegawa, Y. Tada, Nobuhiko Katunuma, E. Murata, Tomoko Inubushi, Vito Turk
Publikováno v: Biochemical and Biophysical Research Communications. 267:850-854
We found that pyridoxal phosphate shows considerable inhibition of cathepsins. CLIK-071, in which the phosphate ester of position 3 of pyridoxal phosphate was replaced by propionate, strongly inhibited cathepsin B. Three new types of synthetic pyrido
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12e4156e35f5df1cd7f5227bea635c0a
https://doi.org/10.1006/bbrc.1999.1953
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9
Role of Osteopontin in Bone Remodeling Caused by Mechanical Stress
Autor: Hirohisa Kawahata, Mizuo Sugimoto, Motohiko Sato, Kunihiro Terai, Yasuo Ohba, Shintaro Nomura, Yukihiko Kitamura, Naohiro Inaguma, Teruko Takano-Yamamoto, Kenji Hiura
Publikováno v: Journal of Bone and Mineral Research. 14:839-849
Changes in the number and proportion of osteopontin mRNA (Opn) expressing osteocytes and osteoclasts caused by the mechanical stress applied during experimental tooth movement were examined in the present study. Opn expression was detected in the ost
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9da9ad9ae7c5dbfec7e24d0cd5ccdccb
https://doi.org/10.1359/jbmr.1999.14.6.839
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10
Room-Temperature CW Operation of GaN-Based Blue-Violet Laser Diodes Fabricated on Sapphire Substrate Using High-Temperature-Grown Single-Crystal AlN Buffer Layer
Autor: Yasuo Ohba, Sinya Nunoue, Susumu Iida
Publikováno v: Japanese Journal of Applied Physics. 45:73-75
Room-temperature continuous-wave (cw) laser operation has been demonstrated for the first time for the test devices fabricated on sapphire substrates by metalorganic chemical vapor deposition using a high-temperature-grown single-crystal AlN (HT-AlN)
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::10bbbc3a397816c0daa09f5a0a5ae940
https://doi.org/10.1143/jjap.45.73
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