Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Yasunori Andoh"'
Autor:
Toshihiko Sakai, Daisuke Matsuo, Masaki Fujiwara, Daisuke Azuma, Yoshitaka Setoguchi, Yasunori Andoh, Eiji Takahashi, Toshiyuki Sameshima
Publikováno v:
2022 29th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e14be308a36a2599a653eaa2829e5cbb
https://doi.org/10.23919/am-fpd54920.2022.9851247
https://doi.org/10.23919/am-fpd54920.2022.9851247
Autor:
Y. Setoguchi, Takuya Ikeda, Eiji Takahashi, Junichi Tatemichi, T. Ui, Daisuke Matsuo, K. Yasuta, Yasunori Andoh, S. Dohi, T. Sakai
Publikováno v:
2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
We investigated electron transport properties of an argon ion (Ar+) implanted a-IGZO film on glass by Hall measurement combined with wet etching. As a result, we obtained concentration and mobility of electron as a function of depth in the a-IGZO fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::192196007aeb3801221201f8b33c38d1
https://doi.org/10.23919/am-fpd52126.2021.9499156
https://doi.org/10.23919/am-fpd52126.2021.9499156
Publikováno v:
2020 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
We investigated noble gas ion He+, Ne+ and Ar+ implantation in amorphous indium-gallium-zinc oxide (a-IGZO) film on glass. Using X-ray photoelectron spectroscopy and cathodoluminescence, we find that oxygen vacancy relation peak increase after the Ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a0a04af61ee2e54ebe170ba606126fe
https://doi.org/10.23919/am-fpd49417.2020.9224487
https://doi.org/10.23919/am-fpd49417.2020.9224487
Autor:
Keisuke Yasuta, Toshimasa Ui, Tomokazu Nagao, Daisuke Matsuo, Toshihiko Sakai, Yoshitaka Setoguchi, Eiji Takahashi, Yasunori Andoh, Junichi Tatemichi
Publikováno v:
Proceedings of the International Display Workshops. :956
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e5301386e66eb70e69ad20e80ed385c
https://doi.org/10.36463/idw.2021.0956
https://doi.org/10.36463/idw.2021.0956
Autor:
Ikeda Takuya, Yasunori Andoh, Mami N. Fujii, Daisuke Matsuo, Yoshitaka Setogucti, Ryoko Miyanaga, Yukiharu Uraoka, Shigeaki Kishida
Publikováno v:
2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
The reliability of oxide semiconductor TFT and the method to lower the process temperature have become serious problems. In order to solve these problems we have developed inductively coupled plasma sputtering equipment that can control the Radio Fre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9587936a0764d680a9bb63d71f96d44e
https://doi.org/10.1109/imfedk48381.2019.8950695
https://doi.org/10.1109/imfedk48381.2019.8950695
Autor:
Daisuke Matsuo, Takuya Ikeda, Shigeaki Kishida, Yoshitaka Setoguchi, Yasunori Andoh, Eiji Takahashi
Publikováno v:
Proceedings of the International Display Workshops. :331
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::155f5a08a0b41139dfd7d2e0af7f1845
https://doi.org/10.36463/idw.2020.0331
https://doi.org/10.36463/idw.2020.0331
Autor:
Toshihiko Sakai, Daisuke Matsuo, Yoshitaka Setoguchi, Yasunori Andoh, Eiji Takahashi, Toshiyuki Sameshima
Publikováno v:
Proceedings of the International Display Workshops. :218
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd2f6ca033c44561edb8dfebe41ed6f3
https://doi.org/10.36463/idw.2020.0218
https://doi.org/10.36463/idw.2020.0218
Autor:
K. Yasuta, Y. Setoguchi, T. Sakai, Eiji Takahashi, R. Fujimoto, Daisuke Matsuo, Yasunori Andoh, J. Tatemichi, T. Ui
Publikováno v:
Proceedings of the International Display Workshops. :315
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f43faff5c15f9f4a11898960f3a8bd0
https://doi.org/10.36463/idw.2020.0315
https://doi.org/10.36463/idw.2020.0315
Autor:
Yasunori Andoh, Eiji Takahashi, Haruka Yamazaki, Yukiharu Uraoka, Juan Paolo Bermundo, Yasuaki Ishikawa, Mami Fujii
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:N17-N21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a8957bd95a1091b4354091591d16940
https://doi.org/10.1149/2.0241605jss
https://doi.org/10.1149/2.0241605jss
Autor:
Ryoko Miyanaga, Daisuke Matsuo, Yukiharu Uraoka, Yoshitaka Setogucti, Takuya Ikeda, Yasunori Andoh, Shigeaki Kishida, Mami N. Fujii
Publikováno v:
2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
This report shows that an amorphous a-InGaZnO (IGZO) thin film transistor (TFT) can control the threshold voltage ( $V_{th}$ ) without thermal annealing process when depositing a-IGZO using an inductively coupled plasma (ICP) sputtering system. A two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7e3e68223cbfad4a9e49984d9c8026d
https://doi.org/10.23919/am-fpd.2018.8437432
https://doi.org/10.23919/am-fpd.2018.8437432