Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Yasunobu Saito"'
Autor:
Chisato Aizawa, Eri Takei, Jin Magara, Yasunobu Saito, Koki Noda, Yukiko Orihara, Mengjie Zhang, Takanori Tsujimura, Makoto Inoue
Publikováno v:
Journal of Functional Foods, Vol 121, Iss , Pp 106423- (2024)
Medium-chain triglyceride (MCT) oil and fat are considered potential candidates to satisfy the nutritional demands of the increasing number of older patients requiring both dysphagia rehabilitation and nutritional therapy. Crystalline oil and fat (CO
Externí odkaz:
https://doaj.org/article/1a67072f862c4a8db80e76f253876feb
Publikováno v:
2023 35th International Conference on Microelectronic Test Structure (ICMTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eaaf9d3bdfed8b8c31c6bbadc8c687d
https://doi.org/10.1109/icmts55420.2023.10094127
https://doi.org/10.1109/icmts55420.2023.10094127
Autor:
Yasuhiro Isobe, Hung Hung, Kohei Oasa, Tasuku Ono, Takashi Onizawa, Akira Yoshioka, Yoshiharu Takada, Yasunobu Saito, Naoharu Sugiyama, Kunio Tsuda, Toru Sugiyama, Ichiro Mizushima
Publikováno v:
Journal of Applied Physics; 2017, Vol. 121 Issue 23, p1-6, 6p
Autor:
Kohei Oasa, Takuo Kikuchi, Yasunobu Saito, A. Yoshioka, Takeshi Hamamoto, T. Sugiyama, Tatsuya Ohguro
Publikováno v:
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ac388830940d9b8278cf09cf7ab106f
https://doi.org/10.7567/ssdm.2016.n-4-04l
https://doi.org/10.7567/ssdm.2016.n-4-04l
Autor:
Marina Yamaguchi, Yasunobu Saito, Tomohiro Nitta, Ichiro Omura, Yorito Kakiuchi, Wataru Saito, Kunio Tsuda
Publikováno v:
IEEE Transactions on Electron Devices. 54:1825-1830
The dynamic on-resistance increase associated with the current collapse phenomena in high-voltage GaN high-electron-mobility transistors (HEMTs) has been suppressed by employing an optimized field-plate (FP) structure. The fabricated GaN-HEMTs of 600
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a593a73777f748cd54ab70121c3e904
https://doi.org/10.1109/ted.2007.901150
https://doi.org/10.1109/ted.2007.901150
Autor:
Yasunobu Saito, Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Ichiro Omura, Takashi Suzuki, Yoshiharu Takada, Mayumi Hirose
Publikováno v:
physica status solidi (a). 204:2010-2013
A new device structure with four epitaxial layers and a recessed gate is proposed for normally-off operation in GaN-FETs. Employment of this structure makes it possible to control accurately the threshold voltage without accurate control of recess et
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fcd9a7ab15ce80380035f7153ab07f8
https://doi.org/10.1002/pssa.200674720
https://doi.org/10.1002/pssa.200674720
Publikováno v:
Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5094a2c1bed1ff601143c14d6aafd89
https://doi.org/10.7567/ssdm.2014.ps-12-5
https://doi.org/10.7567/ssdm.2014.ps-12-5
Autor:
Hidetoshi Fujimoto, Yasunobu Saito, Tomohiro Nitta, Takao Noda, Wataru Saito, Masakazu Yamaguchi, Akira Yoshioka, Tetsuya Ohno, Yorito Kakiuchi
Publikováno v:
IEEE Electron Device Letters. 31:659-661
Four types of the field-plate (FP) structure were fabricated to discuss the relation between the current collapse phenomena and the electric-field peak in high-voltage GaN-HEMTs. The on -resistance increase caused by current collapse phenomena is dra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6853ffeed963b2b8587743a335dcc04b
https://doi.org/10.1109/led.2010.2048741
https://doi.org/10.1109/led.2010.2048741
Autor:
Kunio Tsuda, Yasunobu Saito, Ichiro Omura, Yorito Kakiuchi, Marina Yamaguchi, Tomohiro Nitta, Wataru Saito
Publikováno v:
IEEE Electron Device Letters. 29:8-10
A boost converter with a 940-V/4.4 A GaN-HEMT as the main switching device was demonstrated to show the possibility of using high-voltage GaN-HEMTs in power electronic applications. The demonstrated circuit achieved an output power of 122 W and a pow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9fadf57925e9ff9a4fefaca24a2c017
https://doi.org/10.1109/led.2007.910796
https://doi.org/10.1109/led.2007.910796
Autor:
Marina Yamaguchi, Ichiro Omura, Yasunobu Saito, Yorito Kakiuchi, Tomohiro Nitta, Kunio Tsuda, Wataru Saito
Publikováno v:
IEEE Electron Device Letters. 28:676-678
The 620-V/1.4-A GaN high-electron mobility transistors on sapphire substrate were fabricated and the ON-resistance modulations caused by current collapse phenomena were measured under high applied voltage. Since the fabricated devices had insulating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e03ae963199c81c7c81ef616f41c22d
https://doi.org/10.1109/led.2007.901665
https://doi.org/10.1109/led.2007.901665