Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Yasuki Yamamoto"'
Autor:
Hatta Hideyuki, Shigehisa Yamamoto, Satoshi Yamakawa, Yasuki Yamamoto, Koji Sadamatsu, Masayuki Imaizumi, Shuhei Nakata, T. Iwamatsu, Shiro Hino, Y. Nagahisa
Publikováno v:
Materials Science Forum. 897:477-482
External Schottky barrier diodes (SBD) are generally used to suppress the conduction of the body diode of MOSFET. A large external SBD is required for a high voltage module because of its high specific resistance, while the forward voltage of SBD sho
Autor:
T. Iwamatsu, Yukiyasu Nakao, Koutarou Kawahara, Yasuki Yamamoto, Satoshi Yamakawa, Shiro Hino, Yamashiro Yusuke, Shuhei Nakata, Koji Sadamatsu, Shingo Tomohisa
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
For higher-voltage SiC modules, larger SBD chips are required as free-wheel diodes to suppress current conduction of the body diodes of MOSFETs, which causes bipolar degradation following the expansion of stacking faults. By embedding an SBD into eac
Autor:
Yasuki Yamamoto, Yoshiyuki Nakaki, Kohei Ebihara, Satoshi Yamakawa, Yoshihiko Toyoda, Shuhei Nakata, Sunao Aya, Masayuki Imaizumi
Publikováno v:
Materials Science Forum. :791-794
Edge termination guaranteeing high breakdown voltage and robustness in its fabrication are required in SiC power devices. We newly employed the VLD edge termination for 3.3 kV-rated SiC SBDs, which was formed by Al ion implantation using a resist mas
Autor:
Katsutoshi Sugawara, Satoshi Yamakawa, Masayuki Imaizumi, Rina Tanaka, Yasuhiro Kagawa, Shuhei Nakata, Naruhisa Miura, Nobuo Fujiwara, Fukui Yutaka, Yasuki Yamamoto
Publikováno v:
Materials Science Forum. :919-922
Ensuring gate oxide reliability and low switching loss is required for a trench gate SiC-MOSFET. We developed a trench gate SiC-MOSFET with a p-type region, named Bottom P-Well (BPW), formed at the bottom of the trench gate for bottom oxide protectio
Publikováno v:
Japanese Journal of Applied Physics. 47:2060-2063
We have fabricated local-electrolyte-gated carbon nanotube field-effect transistors (CNTFETs), in which the electrolyte functions as a local top gate. The local-electrolyte-gated CNTFETs in the electrolyte solution provided high performance in terms
Publikováno v:
Transactions of the Materials Research Society of Japan. 32:891-894
Transforming Growth Factor-β Isoforms Expressions in Pulmonary Adenocarcinomas as Prognostic Markers
Autor:
Fumihiko Tanaka, Yasuki Yamamoto, Iwao Takanami, Toshinori Hashizume, Keiichi Kikuchi, Tatsuya Yamamoto, Susumu Kodaira
Publikováno v:
Oncology. 54:122-128
The transforming growth factor (TGF)-β1, TGF-β2 and TGF-β3 expressions were immunohistologically studied in tissues specimens from 120 patients with a pulmonary adenocarcinoma. The results of a univar
Autor:
Tatsuya Yamamoto, Iwao Takanami, Fumihiko Tanaka, K. Kikuchi, Yasuki Yamamoto, Susumu Kodaira, T Hashizume
Publikováno v:
European Journal of Cancer. 32:1504-1509
The expression of basic fibroblast growth factor (bFGF) and its receptor, the high-affinity type I basic fibroblast growth factor receptor (FGFR-1), were immunohistologically studied in tissues specimens from 167 patients with a pulmonary adenocarcin
Autor:
Tatsuya Yamamoto, Iwao Takanami, Keiichi Kikuchi, Fumihiko Tanana, Susumu Kodaira, Toshinori Hashizume, Yasuki Yamamoto
Publikováno v:
Oncology. 53:392-397
The expression of hepatocyte growth factor (HGF) and its receptor, c-Met, was investigated immunohistologically in tissue specimens of patients with a pulmonary adenocarcinoma. The prognosis was significantly worse in the HGF-positive or c-Met-positi
Publikováno v:
Journal of Clinical Pathology. 47:1098-1100
AIMS--To evaluate the efficacy of transforming growth factor beta (TGF-beta) for the prognosis of pulmonary adenocarcinoma. METHODS--TGF-beta was detected immunohistochemically using the avidin-biotin-peroxidase complex technique in resected pulmonar