Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Yasuki Mikamura"'
Autor:
Yasuki Mikamura, Takeyoshi Masuda, Hisato Michikoshi, Shinsuke Harada, Tomoaki Hatayama, Yu Saito
Publikováno v:
Materials Science Forum. 1004:758-763
A 0.63 mΩcm2 / 1170 V property was demonstrated in a 4H-SiC V-groove trench MOSFET with a super junction (SJ) structure. Successful results in SJ-VMOSFETs will inspire research on 600 to 1200 V class devices as their extreme high MOS channel mobilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a15c4ea4b7058b6e22e73733babfc34
https://doi.org/10.4028/www.scientific.net/msf.1004.758
https://doi.org/10.4028/www.scientific.net/msf.1004.758
Autor:
Shougo Hirooka, Hideki Omori, Kunihiro Sakamoto, Yasuki Mikamura, Toshimitsu Morizane, Hidehito Matayoshi
Publikováno v:
2022 International Conference for Advancement in Technology (ICONAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eff99c80d0ed98196c46d0af090c399
https://doi.org/10.1109/iconat53423.2022.9725913
https://doi.org/10.1109/iconat53423.2022.9725913
Autor:
K. Hiratsuka, Hisato Michikoshi, Shinsuke Harada, Takeyoshi Masuda, Hideto Tamaso, Yasuki Mikamura, H. Notsu, Y. Saitoh
Publikováno v:
Materials Science Forum. 897:505-508
We developed V-groove trench gate SiC MOSFETs with grounded buried p+ regions. An effective reduction can be seen in the feedback capacitance (Crss) of static characteristics, and a fast switching performance was achieved. The grounded buried p+ regi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86ee2389667e29cfb67e00c714007410
https://doi.org/10.4028/www.scientific.net/msf.897.505
https://doi.org/10.4028/www.scientific.net/msf.897.505
Autor:
Hirofumi Yamamoto, Kosuke Uchida, Yasuki Mikamura, Takashi Tsuno, Masaki Furumai, Toru Hiyoshi, Taro Nishiguchi
Publikováno v:
Microelectronics Reliability. 64:425-428
Reliability physics of silicon carbide (SiC) metal-oxide semiconductor field-effect transistor (MOSFET) is not sufficiently clear; therefore an accurate estimation method of lifetime has been strongly required. The relationship between the failure ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f42814bfa72fe66d0b46e5542d7d714
https://doi.org/10.1016/j.microrel.2016.07.124
https://doi.org/10.1016/j.microrel.2016.07.124
Publikováno v:
Materials Science Forum. 858:1099-1102
We have demonstrated a new analysis method using a precise equivalent circuit of 3.3 kV 400 A full SiC modules and showed that the calculated waveforms well agree with the measured waveforms. We have also examined the current distribution in the modu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45460ec3fa9f884d18b81be91c71f9eb
https://doi.org/10.4028/www.scientific.net/msf.858.1099
https://doi.org/10.4028/www.scientific.net/msf.858.1099
Autor:
Taro Nishiguchi, Toru Hiyoshi, Masaki Furumai, Kosuke Uchida, Yasuki Mikamura, Shinji Matsukawa, Hirofumi Yamamoto
Publikováno v:
Materials Science Forum. 858:840-843
The influence of surface pit shape on 4H-SiC double implanted MOSFETs (DMOSFETs) reliability under a high temperature drain bias test has been investigated. Threading dislocations formed two types of pit shapes (deep pit and shallow pit) on an epitax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7c07c89830f3857a1c155c85dcef986
https://doi.org/10.4028/www.scientific.net/msf.858.840
https://doi.org/10.4028/www.scientific.net/msf.858.840
Publikováno v:
Materials Science Forum. :741-744
The authors reported the DMOSFETs fabricated on the 4H-SiC(0-33-8) in ECSCRM2012 and the novel V-groove MOSFETs, having (0-33-8) on the trench sidewall in ICSCRM2013. In this paper, we applied both the thick bottom oxide and the buried p+ regions to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53e9b752a047c5ab79f85929dda53b0d
https://doi.org/10.4028/www.scientific.net/msf.821-823.741
https://doi.org/10.4028/www.scientific.net/msf.821-823.741
Autor:
Keiji Wada, Satomi Itoh, Hisato Michikoshi, Takahiro Sugimura, Hideto Tamaso, Toru Hiyoshi, Takashi Tsuno, Jun Genba, Hitoki Tokuda, Yasuki Mikamura, Shigenori Toyoshima, Kenji Kanbara
Publikováno v:
Materials Science Forum. :592-595
Characteristics of SiC MOSFETs and SBDs with 3.3 kV-class have been presented. Static Characteristics of the MOSFET showed a specific on-resistance of 14.2 mΩ cm2. A breakdown voltage of 3850 V is obtained by using the dose optimized edge terminatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36dabff9260d41783edb732b9d2b6ee7
https://doi.org/10.4028/www.scientific.net/msf.821-823.592
https://doi.org/10.4028/www.scientific.net/msf.821-823.592
Autor:
Hisato Michikoshi, Takeyoshi Masuda, Kenji Hiratsuka, So Tanaka, Toru Hiyoshi, Keiji Wada, Takashi Tsuno, Jun Genba, Takeshi Sekiguchi, Yasuki Mikamura, Taku Horii
Publikováno v:
IEEE Transactions on Electron Devices. 62:382-389
Two types of 4H-silicon carbide (SiC) MOSFETs are proposed in this paper. One is the novel designed V-groove trench MOSFET that utilizes the 4H-SiC (0-33-8) face for the channel region. The MOS interface using this face shows the extremely low interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5063ebc5e097d04aecdbe59e0df1e2dc
https://doi.org/10.1109/ted.2014.2362537
https://doi.org/10.1109/ted.2014.2362537
Autor:
Kenji Hiratsuka, Kosuke Uchida, Ren Kimura, Mitsuhiko Sakai, Yasuki Mikamura, Noriyuki Hirakata, Satoshi Hatsukawa, Keiji Wada
Publikováno v:
Materials Science Forum. :915-918
Blocking characteristics of 2.2 kV and 3.3 kV -class 4H-SiC MOSFETs with various doping conditions for the edge termination region have been investigated. By optimizing the implanted dose into the edge termination structure consisting of junction ter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e126300f377cf3645c5fbb56119b67fb
https://doi.org/10.4028/www.scientific.net/msf.778-780.915
https://doi.org/10.4028/www.scientific.net/msf.778-780.915