Zobrazeno 1 - 10
of 306
pro vyhledávání: '"Yasuji Yamada"'
Publikováno v:
Transactions of the Materials Research Society of Japan. 46:33-37
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2724d10014c71be54813039c111bb728
https://doi.org/10.14723/tmrsj.46.33
https://doi.org/10.14723/tmrsj.46.33
Publikováno v:
TEION KOGAKU (Journal of Cryogenics and Superconductivity Society of Japan). 55:275-279
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b1578f4fca23c1c1c6eed3ec5fb6437
https://doi.org/10.2221/jcsj.55.275
https://doi.org/10.2221/jcsj.55.275
Publikováno v:
Thin Solid Films. 657:50-54
The improvement of electrical properties by thermal annealing of Ga-doped ZnO (GZO) films deposited by sputtering has been investigated. The resistivity of a GZO film deposited at room temperature decreases as the vacuum annealing temperature is incr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f5f18227cd6b89a0c7394da7f7da9be
https://doi.org/10.1016/j.tsf.2018.05.001
https://doi.org/10.1016/j.tsf.2018.05.001
Publikováno v:
Thin Solid Films. 609:25-29
Positional distribution of electrical resistivity and crystalline lattice constant of Ga-doped ZnO films deposited by the magnetron spattering method at room temperature have been investigated. Electrical resistivity and c-axis lattice constant stron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de961da1c1515a45b78eca409211fbb0
https://doi.org/10.1016/j.tsf.2016.04.037
https://doi.org/10.1016/j.tsf.2016.04.037
Autor:
Peter Löliger, Brian Pace, Kasturi Srinivasachar, Walter Fuhrer, John G. Gleason, Walter Hunkeler, Albert Eschenmoser, Hans‐Jakob Wild, Larry Ellis, Pius Wehrli, Bernard T. Golding, Erwin Götschi, Yasuji Yamada, Niklaus Buhler, René Nordmann, Peter Schneider, Reinhart Keese, Klaus Müller, Dusan Miljkovic, Reinhard Neier
Publikováno v:
Helvetica Chimica Acta. 98:1921-2054
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80ad725f774305a8c664634acd60330c
https://doi.org/10.1002/hlca.201500012
https://doi.org/10.1002/hlca.201500012
Publikováno v:
Thin Solid Films. 707:138069
Ga-doped ZnO (GZO) films inserted with a Zn layer were deposited at room temperature by a sputtering method to decrease carrier-compensating defects. The Zn-inserted GZO films showed a resistivity decrease resulting from an increase in carrier densit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4bb2765e0979b24ce6cc9093f1b86ae
https://doi.org/10.1016/j.tsf.2020.138069
https://doi.org/10.1016/j.tsf.2020.138069
Publikováno v:
Superlattices and Microstructures. 57:139-149
Zn1−xFexO thin films with different Fe (0 ⩽ x ⩽ 0.20) content were produced by sol–gel dip coating method. The influence of Fe doping on the structural, optical and magnetic properties of ZnO thin films was investigated. X-ray diffraction has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b76eee4f2697ccc9789cc83ed74a0291
https://doi.org/10.1016/j.spmi.2013.02.010
https://doi.org/10.1016/j.spmi.2013.02.010
Publikováno v:
Journal of Alloys and Compounds. 553:259-266
In this research, Zn 1− x Mn x O (0 ⩽ x ⩽ 0.2) thin films were synthesized by sol–gel technique for ferromagnetic and paramagnetic responses at high and low temperatures. In this respect, the produced films were characterized through X-ray di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::210467c0a3b86eed8495c42eae1d594d
https://doi.org/10.1016/j.jallcom.2012.11.097
https://doi.org/10.1016/j.jallcom.2012.11.097
Publikováno v:
physica status solidi (a). 210:589-593
Thermal stabilities of indium tin oxide (ITO) substrates and TiO2/ITO structures were evaluated in relation to their electrical properties. The ITO substrates and TiO2/ITO structures were annealed at 350, 400, and 500 °C. The ITO substrate with larg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b50c62b9340b3c7e1877803a9e4f2a0
https://doi.org/10.1002/pssa.201228325
https://doi.org/10.1002/pssa.201228325
Publikováno v:
Journal of Alloys and Compounds. 508:582-586
The electrical and thermal transport properties of boron-doped rutile-type TiO2 were investigated. The rutile-type TiO2 powder was mixed with B2O3, TiB2 or B and the mixtures were sintered using the pulse current sintering method at 1473 K. Secondary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2330a018a487b93e4b942561b889e20e
https://doi.org/10.1016/j.jallcom.2010.08.125
https://doi.org/10.1016/j.jallcom.2010.08.125