Zobrazeno 1 - 10
of 108
pro vyhledávání: '"Yasuji Matsui"'
Publikováno v:
JOURNAL OF THE JAPANESE ASSOCIATION OF RURAL MEDICINE. 64:847-852
Publikováno v:
Microelectronic Engineering. :17-21
A new X-ray stepper XRA, which is equivalent to β-machine for proximity X-ray lithography (PXL), was installed at ASET Amagasaki-branch, and we have started the evaluation of its performance. The present alignment accuracy using global alignment met
Publikováno v:
Journal of Photopolymer Science and Technology. 14:519-522
Autor:
Sunao Aya, Hideki Yabe, Yasuji Matsui, Kenji Marumoto, Hiroshi Watanabe, Takashi Hifumi, Kenji Itoga, Muneyoshi Suita, H. Sumitani
Publikováno v:
Microelectronic Engineering. 53:587-590
Synchrotron radiation lithography is applied to the real dynamic random access memory process. Two full chip x-ray masks whose overlay accuracy is 19.2nm (x) and 26.4nm(y) are prepared. By using Canon x-ray stepper, total overlay accuracy less than 4
Autor:
Katsumi Suzuki, Yasuji Matsui
Publikováno v:
Journal of Photopolymer Science and Technology. 13:373-378
In ASET, in cooperation with NTT, we have developed key systems for X-ray lithography (XRL) such as X-ray steppers and a 100-kV electron-beam (EB) lithography system for x-ray mask fabrication. Mask-to-mask overlay accuracy within 20nm (3σ) between
Publikováno v:
Journal of Photopolymer Science and Technology. 12:577-582
Publikováno v:
Materials Chemistry and Physics. 54:17-22
Ion shower doping and plasma doping are attractive for low energy implant required for sub-quarter micron MOSEETs, owing to their high dose rate and large-area implantation capability. However, as ions are not mass-analyzed, various kinds of ion spec
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 121:257-261
Nitrogen is not a commonly used ion species in Si ULSI. It cannot be used as an n-type dopant because of its low solubility in Si. However, it shows interesting properties such as the suppression of boron diffusion when applied to source/drain doping
Autor:
Makoto Hirayama, Kiyoteru Kobayashi, Akihiko Yasuoka, Yasuji Matsui, Akinobu Teramoto, Tadashi Nakamura
Publikováno v:
Journal of The Electrochemical Society. 143:3377-3383
Electron capture and excess current after substrate hot-hole injection into 60 and 131 A silicon dioxides have been studied. After the hole injection into 131 A oxides, a transient excess current appears in the gate current-oxide field characteristic
Autor:
Kiyoteru Kobayashi, Yasuji Matsui, Makoto Hirayama, Hajime Watanabe, Tamotsu Ogata, Yutaka Inaba, Toshiharu Katayama
Publikováno v:
Journal of The Electrochemical Society. 143:1459-1464
We demonstrated the formation technique of highly reliable ultrathin oxidized silicon nitride film (34 A in oxide equivalent thickness) on three-dimensional cylindrical stacked capacitor cells. In situ H 2 cleaning and low-pressure chemical vapor dep