Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Yasuhito Uchiyama"'
Publikováno v:
Infrared Physics & Technology. 47:164-168
We developed a Monte-Carlo simulation to calculate the characteristics of QDIP devices. To implement QDs into our Monte-Carlo simulation, QDs are expressed as a sort of “scattering centers”. Infrared absorption is implemented by the change of the
Publikováno v:
Infrared Physics & Technology. 52:257-259
We studied the responsivity–dark current relationship of quantum dot infrared photodetector (QDIP) devices published by several research groups. We found that the dark currents ( I d s) of these devices increased in proportion to the square of resp
Autor:
Ryo Suzuki, Michiya Kibe, Hironori Nishino, Shinji Miyazaki, Yusuke Matsukura, Toshio Fujii, Yasuhito Uchiyama, Mi. Doshida, H. Yamashita, Mitsuhiro Nagashima
Publikováno v:
SPIE Proceedings.
Recently, quantum dot infrared photodetectors (QDIP) have been intensively investigated because they can be fabricated by conventional matured GaAs processing. QDIP can detect normal incident light in contrast to quantum well infrared photodetectors
Autor:
Hironori Nishino, Yasuhito Uchiyama, Nobuyuki Kajihara, Toshio Fujii, Ozaki Kazuo, Yusuke Matsukura
Publikováno v:
SPIE Proceedings.
A novel quantum-well infrared photodetector (QWIP) with peak responsivity in the mid-wavelength (MW) range was characterized, and the performance of a focal-plane array (FPA) based on the MW-QWIP was investigated. InGaAs/AlGaAs quantum wells were use
Publikováno v:
SPIE Proceedings.
We investigated the mechanism of the photocurrent transmission in mid-wavelength quantum-well infrared photodetectors that were made using InGaAs/AlGaAs quantum wells so that their peak absorption would be at a wavelength near 5 μm. Analyzing the bi
Autor:
Toshio Fujii, Yasuhito Uchiyama, Yusuke Matsukura, Hironori Nishino, Tetsuya Miyatake, Kousaku Yamamoto
Publikováno v:
SPIE Proceedings.
We investigated the behavior of the dark current (Id) in quantum well infrared photodetectors (QWIPs) in which the barrier layers were selectively doped instead of the well layers. Because the selective doping bends the conduction band (CB) edge in t
Autor:
Yasuhito Uchiyama, Minoru Doshida, Hironori Nishino, Yusuke Matsukura, Michiya Kibe, Mitsuhiro Nagashima
Publikováno v:
Journal of Applied Physics. 107:054504
We propose a quantum dot infrared photodetector (QDIP) having distinct sensitivity to mutually orthogonal in-plane polarized infrared radiation, and applicable to practical infrared (IR) imaging applications. Our QDIP has either an InAs/AlAs/AlGaAs o