Zobrazeno 1 - 10
of 476
pro vyhledávání: '"Yasuhisa Omura"'
Autor:
Yasuhisa Omura
Publikováno v:
AIP Advances, Vol 11, Iss 11, Pp 115123-115123-16 (2021)
This paper revisits the master-equation-based approach to physical parameters to characterize transport in three-dimensional and low-dimensional few-electron systems. Advanced expressions of the electron density are theoretically derived at equilibri
Externí odkaz:
https://doaj.org/article/0b7d524f3c7540aa9ba0275f86bb4b5d
Autor:
Yasuhisa OMURA
Publikováno v:
Sensors & Transducers, Vol 235, Iss 7, Pp 1-8 (2019)
This paper theoretically investigates how a Si pn-junction rod offers the potential to develop rotating motion. An analytical steady state solution of excess carrier concentration of the Si rod is derived from the continuity equation. The solution is
Externí odkaz:
https://doaj.org/article/db65dd96fd6d4c95ad404c62906d006b
Autor:
Yasuhisa Omura, Shingo Sato
Publikováno v:
AIP Advances, Vol 11, Iss 1, Pp 015030-015030-9 (2021)
This paper proposes a possible theoretical model to analyze the impacts of light illumination on the post-illumination transient current of sputter-deposited non-doped ZnO films. Although the authors have already demonstrated experimentally the impac
Externí odkaz:
https://doaj.org/article/c8fe7d5316f2481ba8810033036d04af
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 4, Pp 169-173 (2016)
This paper proposes a detailed equivalent circuit of the pseudo-MOS capacitor structure and subjects it to impedance spectroscopy. We find, using Cole–Cole plots, that three resistance components, which correspond to interface traps, contact resist
Externí odkaz:
https://doaj.org/article/699dc8cda30748e1b1e73a40192d91a6
Autor:
Yasuhisa Omura, Daiki Sato
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 4, Iss 1, Pp 15-25 (2014)
This paper describes the performance prospect of scaled cross-current tetrode (XCT) CMOS devices and demonstrates the outstanding low-energy aspects of sub-30-nm-long gate XCT-SOI CMOS by analyzing device operations. The energy efficiency improvement
Externí odkaz:
https://doaj.org/article/1e526089608c4320950ec58e22b8a30e
Autor:
Yasuhisa Omura
Publikováno v:
Micromachines, Vol 10, Iss 1, p 5 (2018)
This paper theoretically revisits the low-frequency noise behavior of the inversion-channel silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) and the buried-channel SOI MOSFET because the quality of both Si/SiO2 inte
Externí odkaz:
https://doaj.org/article/907ab64558fb46adb840caceb41d511d
Autor:
Yasuhisa Omura
Publikováno v:
Active and Passive Electronic Components, Vol 2016 (2016)
This paper reconsiders the mathematical formulation of the conventional nonparabolic band model and proposes a model of the effective mass of conduction band electrons including the nonparabolicity of the conduction band. It is demonstrated that this
Externí odkaz:
https://doaj.org/article/710ec37e5bb64bdeb621056a5f90af01
Autor:
Yasuhisa Omura
Publikováno v:
Advances in Materials Science and Engineering, Vol 2015 (2015)
This paper proposes a poststress time evolution model for sub-10-nm thick SiO2 films for degradation prediction and the extraction of trap-related parameters. The model is based on the understanding that the degradation in thin SiO2 films continues w
Externí odkaz:
https://doaj.org/article/7f29a6c174c14744823fa08e9e0fbd6f
Autor:
Yasuhisa Omura
Publikováno v:
Active and Passive Electronic Components, Vol 2011 (2011)
We propose a high-temperature-operation (HTOT) SOI MOSFET and show preliminary simulation results of its characteristics. It is demonstrated that HTOT SOI MOSFET operates safely at 700 K with no thermal instability because of its expanded effective b
Externí odkaz:
https://doaj.org/article/de4115b4febf4fd4b69d3f342f31f9c8
Autor:
Yasuhisa Omura
Publikováno v:
ECS Transactions. 111:123-133
This paper reviews our experimental studies on the resistive switching behaviors of sputter-deposited Si oxide films. Theoretical simulations are also demonstrated to elucidate the physical mechanisms of resistive switching behaviors. These suggest t