Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Yasuhisa Kayaba"'
Autor:
Keiji Matsumoto, Takahito Watanabe, Risa Miyazawa, Toyohiro Aoki, Takashi Hisada, Yuzo Nakamura, Yasuhisa Kayaba, Jun Kamada, Kazuo Kohmura
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Publikováno v:
International Symposium on Microelectronics. 2019:000280-000283
Heterogeneous integration of logic, memory, and sensor chips on interposers (2.5D) has attracted a lot of attention as a candidate for More-than-Moore technology. For the high performance 2.5D devices, high density integration of chips with narrow sp
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
The bonding property of a thin adhesive for the high density 3D/2.5D Si chip integration with the Cu-Cu bonding at the low temperature range (150–400 °C) was investigated. The cured thin adhesive is bondable to SiO 2 after baking at 150 °C with t
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:N67-N71
Publikováno v:
The Journal of Physical Chemistry C. 119:22882-22888
A strategy for selective formation of an organic film on SiO2 surface while minimizing its deposition on Cu surface is proposed. The organic film was deposited by spin coating a polyamine solution and an aromatic carboxylic acid solution in a sequent
Publikováno v:
ACS Applied Materials & Interfaces. 7:17131-17137
Organic nanolayers attract much attention for the isolation and adhesion promotion of the Cu line and insulator in Cu interconnection of microelectronic devices. This paper proposes a strategy for selective formation of adhesion nanolayer on the insu
Publikováno v:
MRS Proceedings. 1791:7-13
In order to integrate porous dielectric materials into the next generation of Cu/low-k interconnect, the porous material has to be sealed against metal barrier precursor. We have reported pore sealants which forms ultra-thin (< 3 nm-thick) layer on t
Publikováno v:
Japanese Journal of Applied Physics. 58:021003
Silylation treatment processes on pore surfaces in a pure silica zeolite (PSZ) porous low dielectric constant (low-k) film were investigated for high elastic modulus. As the silylation process, 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) treatment
Autor:
Yasuhisa Kayaba, Takafumi Yamamoto, Yuki Hata, Tadashi Sato, Shin-Ichiro Kuroki, Yutaka Seino, Takamaro Kikkawa
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:N89-N92
Publikováno v:
The Journal of Physical Chemistry C. 115:12981-12989
A quantitative and systematic investigation about the molecular nature of the dielectric and mechanical properties of organic/inorganic hybrid glass film with alkylene bridges was performed. The hybrid glass film was prepared from a sol precursor sol