Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Yasuhisa Inao"'
Publikováno v:
Microelectronic Engineering. 84:705-710
We demonstrate a prototype of the near-field lithography system, which is a potential tool for low cost nano-fabrication. Resist patterns with 50nm features are fabricated on the entire surface of a 4-in. silicon wafer by step and repeat exposure usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61ebea5c2a272b5e68019cf10d04aca0
https://doi.org/10.1016/j.mee.2007.01.043
https://doi.org/10.1016/j.mee.2007.01.043
Autor:
Yasuhisa Inao, Toshiki Ito, Takako Yamaguchi, Akira Terao, Tomohiro Yamada, Natsuhiko Mizutani, Ryo Kuroda
Publikováno v:
Microelectronic Engineering. 84:690-693
Near-field lithography (NFL) has no fundamental limit such as the diffraction limit of light. However, in order to fabricate resist patterns with hp 32nm, thorough optimization of various processes are indispensable. Previously, we reported on the us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8304fd6ea62f31ed1abee0daff99ca6
https://doi.org/10.1016/j.mee.2007.01.115
https://doi.org/10.1016/j.mee.2007.01.115
Publikováno v:
Journal of Photopolymer Science and Technology. 20:591-598
Polyhydroxystyrenes protected with three kinds of o-nitrobenzyl (NB) group are synthesized: 4,5- dimethoxy NB group (DNB), 4- monomethoxy NB group (MNB) and $alpha;-methyl 4,5- dimethoxy NB group (ADNB). Their solutions are formulated as photo-deprot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a08e2279864f673c70168bc975d4b4f0
https://doi.org/10.2494/photopolymer.20.591
https://doi.org/10.2494/photopolymer.20.591
Autor:
Masaya Ogino, Ryo Kuroda, Tomohiro Yamanaka, Yasuhisa Inao, Takako Yamaguchi, Natsuhiko Mizutani, Toshiki Ito
Publikováno v:
Journal of Photopolymer Science and Technology. 18:435-441
A resist pattern of half-pitch (hp) 50 nm, 120 nm deep was fabricated with near-field lithography (NFL) of i-line (l = 365 nm) using a positive-tone chemically amplified resist and a tri-layer resist process developed for NFL. The experimental result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96179f9a3207ef068f83159f66d25a43
https://doi.org/10.2494/photopolymer.18.435
https://doi.org/10.2494/photopolymer.18.435
Publikováno v:
SPIE Proceedings.
We propose a non chemically-amplified positive-tone photoresist based on photolysis of o-nitrobenzyl phenol ether (NBP). The increase in the amount of the phenolic hydroxyl group just after the exposure to the i-line propagation light is observed via
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64d2524528b8373ef64f2d2eac02d61a
https://doi.org/10.1117/12.711276
https://doi.org/10.1117/12.711276
Publikováno v:
Journal of Nanophotonics. 1:011595
We have developed new type of photolithography based on a nonadiabatic photochemical process that exposes an ultraviolet-photoresist using a visible optical near field. Investigating the exposure dependence of the developed depth using nonadiabatic p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ba0de5cf30e05428762ef1e4acacb1c
https://doi.org/10.1117/1.2833587
https://doi.org/10.1117/1.2833587
Autor:
Tomohiro Yamada, Natsuhiko Mizutani, Takako Yamaguchi, Yasuhisa Inao, Ryo Kuroda, Toshiki Ito
Publikováno v:
Applied Physics Letters. 89:033113
We evaluated the performances of Cr and amorphous Si (a-Si) films as light absorber materials for photomasks of near-field lithography on the basis of numerical studies using finite-difference time domain method and experimental results of fabricatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7043d937f14e37790aaf3ac758b4f9e
https://doi.org/10.1063/1.2227633
https://doi.org/10.1063/1.2227633