Zobrazeno 1 - 10
of 286
pro vyhledávání: '"Yasuhisa, Sano"'
Autor:
Shotaro Matsumura, Iori Ogasahara, Masafumi Miyake, Taito Osaka, Daisetsu Toh, Jumpei Yamada, Makina Yabashi, Kazuto Yamauchi, Yasuhisa Sano
Publikováno v:
Applied Physics Express, Vol 17, Iss 1, p 016001 (2024)
We developed a new etching technique using plasma generated at high pressure up to 9 atm. Operating at 9-atm pressure with a 30- μ m-diameter wire electrode, we demonstrated the generation of well-ordered plasma at a narrow gap of ∼10 μ m between
Externí odkaz:
https://doaj.org/article/5922f5e7a2214066841b1151cce20d33
Autor:
Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Tsuyoshi Funaki, Yasuhisa Sano
Selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 – October 4, 2013, Miyazaki, Japan
Autor:
Taito Osaka, Ichiro Inoue, Jumpei Yamada, Yuichi Inubushi, Shotaro Matsumura, Yasuhisa Sano, Kensuke Tono, Kazuto Yamauchi, Kenji Tamasaku, Makina Yabashi
Publikováno v:
Physical Review Research, Vol 4, Iss 1, p L012035 (2022)
An intensity autocorrelation measurement is demonstrated to characterize a pulse duration of 9-keV x-ray free-electron laser (XFEL) pulses from a split-delay optical (SDO) system with four-bounce silicon 220 reflections in each branch. XFEL pulse rep
Externí odkaz:
https://doaj.org/article/0d96a76aba674513a7c0c8d5a039ed27
Publikováno v:
Solid State Phenomena. 342:69-72
In addition to silicon carbide (SiC) and gallium nitride (GaN), gallium oxide (Ga2O3) is attracting attention as a widegap semiconductor material. Ga2O3, unlike SiC and GaN, is not as hard, but has strong cleavage properties, making highly effective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::970f8ea131c8286f855cf7071d1b5675
https://doi.org/10.4028/p-2349e2
https://doi.org/10.4028/p-2349e2
Autor:
Taito Osaka, Takashi Hirano, Yuki Morioka, Yasuhisa Sano, Yuichi Inubushi, Tadashi Togashi, Ichiro Inoue, Kensuke Tono, Aymeric Robert, Kazuto Yamauchi, Jerome B. Hastings, Makina Yabashi
Publikováno v:
IUCrJ, Vol 4, Iss 6, Pp 728-733 (2017)
Temporal coherence is one of the most fundamental characteristics of light, connecting to spectral information through the Fourier transform relationship between time and frequency. Interferometers with a variable path-length difference (PLD) between
Externí odkaz:
https://doaj.org/article/599f2c7195e448fc8e04a834b513a63e
Publikováno v:
International Journal of Automation Technology. 15:74-79
Daisetsu Toh, Pho Van Bui, Kazuto Yamauchi, and Yasuhisa Sano, “Photoelectrochemical Oxidation Assisted Catalyst-Referred Etching for SiC (0001) Surface,” Int. J. Automation Technol., Vol.15, No.1, pp. 74-79, 2021.
In a previous study, we de
In a previous study, we de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5bd7ad5722ba86ac8dbda7982b19984
https://doi.org/10.20965/ijat.2021.p0074
https://doi.org/10.20965/ijat.2021.p0074
Publikováno v:
Materials Science Forum. 1004:161-166
To reduce the on-resistance in vertical power transistors, backside thinning is required after device processing. However, it is difficult to thin silicon carbide (SiC) wafers with a high removal rate by conventional mechanical processing because the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e83d0c358720b4c05f5520ee54b5f5a
https://doi.org/10.4028/www.scientific.net/msf.1004.161
https://doi.org/10.4028/www.scientific.net/msf.1004.161
Autor:
Takato Inoue, Yuka Nishioka, Satoshi Matsuyama, Junki Sonoyama, Kazuteru Akiyama, Hiroki Nakamori, Yoshio Ichii, Yasuhisa Sano, Xianbo Shi, Deming Shu, Max D. Wyman, Ross Harder, Yoshiki Kohmura, Makina Yabashi, Lahsen Assoufid, Tetsuya Ishikawa, Kazuto Yamauchi
Publikováno v:
The Review of scientific instruments. 93(4)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9cce9388e5d2763f40e0269f01eeaac0
https://pubmed.ncbi.nlm.nih.gov/34972426
https://pubmed.ncbi.nlm.nih.gov/34972426
High-speed etching of gallium nitride substrate using hydrogen-contained atmospheric-pressure plasma
Publikováno v:
Applied Physics Express. 16:045504
Atmospheric-pressure plasma etching of a gallium nitride (GaN) substrate using hydrogen radicals instead of chlorine radicals was investigated toward the backside thinning of GaN vertical power devices to reduce on-resistance. As a basic experiment,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04de6ba0c95552392040a96b84783284
https://doi.org/10.35848/1882-0786/accc0c
https://doi.org/10.35848/1882-0786/accc0c
Autor:
Takato Inoue, Yuka Nishioka, Satoshi Matsuyama, Junki Sonoyama, Kazuteru Akiyama, Hiroki Nakamori, Yoshio Ichii, Yasuhisa Sano, Xianbo Shi, Deming Shu, Max D. Wyman, Ross Harder, Yoshiki Kohmura, Makina Yabashi, Lahsen Assoufid, Tetsuya Ishikawa, Kazuto Yamauchi
Publikováno v:
The Review of scientific instruments. 92(12)
Takato Inoue, Yuka Nishioka, Satoshi Matsuyama, Junki Sonoyama, Kazuteru Akiyama, Hiroki Nakamori, Yoshio Ichii, Yasuhisa Sano, Xianbo Shi, Deming Shu, Max D. Wyman, Ross Harder, Yoshiki Kohmura, Makina Yabashi, Lahsen Assoufid, Tetsuya Ishikawa, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f862a75f498d79dbaf768590d893eb2d
https://pubmed.ncbi.nlm.nih.gov/35489894
https://pubmed.ncbi.nlm.nih.gov/35489894