Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Yasuhiro Suematsu"'
Autor:
Siddhesh Darne, Teruo Takagiwa, Junya Matsuno, Yuki Shimizu, Naoya Tokiwa, Kei Shiraishi, Tetsuaki Utsumi, Hiroyuki Mizukoshi, Koji Hosono, Masatsugu Kojima, Junji Musha, Takuyo Kodama, Osamu Kobayashi, Masahiro Kano, Takeshi Hioka, Naoki Ookuma, Yuki Kuniyoshi, Takahiro Sugimoto, Ryoichi Tachibana, Hiroshi Sugawara, Hiroki Date, Kazuhide Yoneya, Srinivas Rajendra, Akira Arimizu, Yoshito Katano, Mitsuhiro Abe, Keiji Tsunoda, Masakazu Ehama, Toshifumi Hashimoto, Tianyu Tang, Tomofumi Fujimura, Ryo Fukuda, Jason Li, Hiroshi Maejima, Shintaro Hayashi, Akio Sugahara, Kei Akiyama, Koji Kato, Toru Miwa, Kensuke Yamamoto, Masahiro Yoshihara, Katsuaki Sakurai, Itaru Yamaguchi, Tsutomu Higuchi, Mizuki Kaneko, Jumpei Sato, Kazumasa Yamamoto, Yasuhiro Suematsu, Mitsuyuki Watanabe, Ryuji Yamashita, Venky Ramachandra, Kosuke Yanagidaira, Jiwang Lee, Kazuko Inuzuka, Hirotoshi Mori, Takatoshi Minamoto, Tomoharu Hashiguchi, Mitsuaki Honma, Juan Lee
Publikováno v:
ISSCC
This work demonstrates a novel 1Tb 3D Flash memory chip that has an area efficiency of 10.4Gb/mm2 in a 3b/cell technology. Using a circuit under array (CUA) design technique and over 170 word-line (WL) layers, the chip achieves 33% higher bit density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::246d299cae34d3af1b49b01f6b5bee4c
https://doi.org/10.1109/isscc42613.2021.9366003
https://doi.org/10.1109/isscc42613.2021.9366003
Autor:
Katsuaki Sakurai, Feng Lu, Kenro Kubota, Hiroshi Sugawara, Yoshihiko Shindo, Steve Choi, Junji Musha, Yusuke Ochi, Hao Nguyen, Hiroshi Nakamura, Yee Koh, Yasuhiro Suematsu, Ryo Fukuda, Tomoko Nishiuchi, Spiros Georgakis, Keyur Payak, Masatsugu Kojima, Sanad Bushnaq, Naoki Kobayashi, Kwang-ho Kim, Hiroe Minagawa, Manabu Sato, Yuuki Shimizu, Naoaki Kanagawa, Susumu Fujimura, Teruo Takagiwa, Kenichi Abe, Takahiro Shimizu, Toshiki Hisada, Taichi Wakui, Hiroshi Maejima, Susumu Ozawa, Makoto Miakashi, Srinivas Rajendra, Kazushige Kanda, Hiroshi Yoshihara, Namas Raghunathan, Akihiro Imamoto, Koji Hosono, Dong He, Satoshi Inoue, Masatsugu Ogawa, Seungpil Lee, Jumpei Sato, Fumihiro Kono, Yuui Shimizu, Kazuhiko Satou, Takuya Futatsuyama, Venky Ramachandra, Naohito Morozumi, Weihan Wang, Tomoharu Hashiguchi, Hicham Haibi, Noboru Shibata, Takatoshi Minamoto, Xu Li, Kouichirou Yamaguchi, Toshifumi Hashimoto, Takahiro Yamashita, Ken Cheah, Mitsuhiro Abe, Tetsuya Kaneko, Tadashi Yasufuku, Takahiro Sugimoto
Publikováno v:
ISSCC
The first multi-layer stacked 3D Flash memory was proposed as BiCS FLASH in 2007 [1]. Since then, memory bit density has grown rapidly due to the increase in the number of stacked layers from continuous 3D technology innovations. On the other hand, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97bbed59d5735369bb77aa3c73309af7
https://doi.org/10.1109/isscc.2018.8310321
https://doi.org/10.1109/isscc.2018.8310321