Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Yasuhiro Shimura"'
Publikováno v:
Molecules, Vol 21, Iss 5, p 619 (2016)
We identified two aliphatic formates, (Z,Z)-8,11-heptadecadienyl formate and (Z)-8-heptadecenyl formate in the opisthonotal gland secretions of an unidentified acarid species, namely Sancassania sp. Sasagawa. Both compounds were isolated using silica
Externí odkaz:
https://doaj.org/article/61bc8dcece2a4e8b8c63d8710d6b1f5c
Publikováno v:
Thin Solid Films. 516:5899-5902
Specific contact resistances between an amorphous oxide semiconductor, In-Ga-Zn-O, and various metallic electrodes, Ag, Au, In, Pt, Ti, polycrystalline indium tin oxide (ITO) and amorphous indium zinc oxide (a-IZO), were examined. All the contacts ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1c423f1800b8c5d5ca913cb1a9f9d23
https://doi.org/10.1016/j.tsf.2007.10.051
https://doi.org/10.1016/j.tsf.2007.10.051
Autor:
T. Selvaraj, Subramanian Balakumar, X.T. Chen, B.F. Lin, Y.W. Chen, Masayo Fujimoto, Yasuhiro Shimura, Rajesh Kumar, Tohru Hara
Publikováno v:
Thin Solid Films. :161-167
One of the major challenges with integration of Cu/low-k or ultralow-k materials is to eliminate delamination during chemical mechanical planarization (CMP) process due to their porous nature and weak mechanical properties. Three different kinds of p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92b944fe80b894ed916c6e4b905733d6
https://doi.org/10.1016/j.tsf.2004.05.090
https://doi.org/10.1016/j.tsf.2004.05.090
Publikováno v:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..
This paper describes the resistivity in copper interconnection layer for high-speed logic LSIs. Resistivity increases to 7.8 /spl mu//spl Omega/-cm with decreasing of thickness to 75 nm in conventional electroplated copper layer. This increase is due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b41c1a42de75de92131b8f29397cea6
https://doi.org/10.1109/icsict.2004.1435059
https://doi.org/10.1109/icsict.2004.1435059
Publikováno v:
Electrochemical and Solid-State Letters. 6:G98
The variation of stress and resistivity with time, the phenomenon of self-annealing, is studied in a copper interconnection layer deposited by electroplating. In a conventional copper sulfate layer deposited on a TaN barrier layer, a high stress copp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4414a090b9a2d13db09357219bd4558e
https://doi.org/10.1149/1.1576572
https://doi.org/10.1149/1.1576572
Publikováno v:
Electrochemical and Solid-State Letters. 6:C8
High resistivity and peeling have been problems with electroless copper layers preventing their use as a seed layer. Further, when copper is electroplated onto this seed layer, the resistivity is as high as 4.0 μΩ cm, much higher than the 2.2 μΩ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa227b04b906a126cf4aad33c2720ccc
https://doi.org/10.1149/1.1527410
https://doi.org/10.1149/1.1527410
Periodical
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