Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Yasuhiro Murase"'
Autor:
Kohji Ishikura, Yuji Ando, K. Asano, Yasuhiro Murase, Isao Takenaka, Shinnosuke Takahashi, Hidemasa Takahashi, Chiaki Sasaoka
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 62:502-512
We have successfully developed high-efficiency and high-power microwave amplifiers using a GaN field-effect transistor (FET) on a low-resistivity (LR) Si substrate for the first time. By introducing the LR Si substrate whose resistivity is less sensi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e5f953516a5166418bd95ea5ecfe05f
https://doi.org/10.1109/tmtt.2014.2298381
https://doi.org/10.1109/tmtt.2014.2298381
Autor:
Yuji Ando, Hidemasa Takahashi, Chiaki Sasaoka, Isao Takenaka, Kohji Ishikura, K. Asano, Shinnosuke Takahashi, Yasuhiro Murase
Publikováno v:
IEEE Transactions on Electron Devices. 60:4125-4132
This paper reports the impact of epi-layer quality on the short-term reliability of GaN/AlGaN/GaN heterostructure field-effect transistors fabricated on Si substrates. At an early stage of 50 V high-temperature operating life tests, they exhibited a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e21408cda8fa523717a8ac6170002da
https://doi.org/10.1109/ted.2013.2284285
https://doi.org/10.1109/ted.2013.2284285
Autor:
Hidemasa Takahashi, Kohji Ishikura, Shinnosuke Takahashi, Yuji Ando, Chiaki Sasaoka, K. Asano, Isao Takenaka, Yasuhiro Murase
Publikováno v:
IEEE Transactions on Electron Devices. 60:2788-2794
The contact resistance of Mo-based ohmic contact was investigated for undoped GaN/AlGaN/GaN heterostructure field-effect transistors having different GaN cap layer thickness (tcap) and AlN mole fraction (xAl) values. Measured specific contact resisti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14e1fe71ded4c35423a34028028ceb70
https://doi.org/10.1109/ted.2013.2273937
https://doi.org/10.1109/ted.2013.2273937
Publikováno v:
IEEE Electron Device Letters. 35:524-526
In this letter, we have fabricated GaN heterostructure field-effect transistors (HFETs) with submicrometer T-shaped gate on Si substrate to realize compact solid-state power amplifiers used in Ku-band and higher. An AlGaN buffer layer was incorporate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3665daf6eee27def7fae42eec8ea6846
https://doi.org/10.1109/led.2014.2308313
https://doi.org/10.1109/led.2014.2308313
Autor:
Ikuo Kanno, T. Nakamura, O. Sugiura, Shigeomi Hishiki, Aratono Yasuyuki, Masaki Katagiri, Yasuhiro Murase
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 520:76-79
The neutron-detection characteristics of a cryogenic neutron detector comprising an InSb semiconductor detector and a helium-3 gas converter were evaluated at a gas pressure up to 12.4 atm at 4.2 K. The detector successfully detected stable neutrons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44bae22306dd0fefeabf43adcc6dfda6
https://doi.org/10.1016/j.nima.2003.11.225
https://doi.org/10.1016/j.nima.2003.11.225
Autor:
Masaki Katagiri, T. Nakamura, Yasuhiro Murase, Ryo Nouchi, Fumiki Yoshihara, Osamu Sugiura, Ikuo Kanno
Publikováno v:
Review of Scientific Instruments. 74:3968-3973
Pn junction-type radiation detectors were fabricated with an InSb substrate. The detectors had 1000 times higher resistances than those of previously reported Schottky-type detectors. The output pulses of the preamplifier were analyzed from the point
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7c20055d32835004415dbd2a15d3bb2
https://doi.org/10.1063/1.1599067
https://doi.org/10.1063/1.1599067
Publikováno v:
physica status solidi (b). 229:457-461
We have investigated the effect of upper barrier layer growth on self-assembled CdSe quantum dots (QDs) by transmission electron microscope (TEM) and atomic force microscope (AFM). The AFM image of CdSe surfaces reveals a lot of isolated CdSe dots an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1f19918b1b287a2deca9517811b5e2d
https://doi.org/10.1002/1521-3951(200201)229:1<457::aid-pssb457>3.0.co
https://doi.org/10.1002/1521-3951(200201)229:1<457::aid-pssb457>3.0.co
Autor:
Takeshi J. Inagaki, Yoshihiko Kanemitsu, Takeshi Ota, T. Kushida, Hisao Nakashima, M. Ando, Kenzo Maehashi, Yasuhiro Murase
Publikováno v:
Journal of Luminescence. :403-406
Many-body effects were studied in highly photoexcited CdSe quantum dots (QDs). The size of the QDs was larger than the exciton Bohr radius in bulk CdSe crystals, so that the excitons are confined in the CdSe QDs. With increasing excitation density, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7ed8ea7d98fe0fe2497c214d58f874f
https://doi.org/10.1016/s0022-2313(01)00313-1
https://doi.org/10.1016/s0022-2313(01)00313-1
Publikováno v:
Journal of Crystal Growth. :1116-1120
We have observed a single CdSe quantum dot (QD) by high-resolution plan-view transmission electron microscopy images to investigate the shape and size of CdSe QDs naturally formed on ZnSe(0 0 1) surfaces. A tentative model is that the base structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5426f6879cdaf9616cbbf73705e0ff36
https://doi.org/10.1016/s0022-0248(01)00999-x
https://doi.org/10.1016/s0022-0248(01)00999-x
Autor:
Keiichi Edamatsu, Kenzo Maehashi, Tadashi Itoh, Hisao Nakashima, Takeshi Ota, Kenichi Oto, Kazuo Murase, Chikara Watatani, Yasuhiro Murase
Publikováno v:
Journal of Electronic Materials. 30:448-452
We have investigated carrier relaxation dynamics in single CdSe/ZnSe quantum dot (QD) by time-resolved micro-photoluminescence (PL). The discrete sharp lines, originated from individual QD states, exhibit various rise and decay time constants. The de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c8993c7f8d1d7357a5fd8b5df51bfdc
https://doi.org/10.1007/s11664-001-0081-4
https://doi.org/10.1007/s11664-001-0081-4