Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Yasuhiro Kosasayama"'
Autor:
Misaki Hanaoka, Yasuhiro Kosasayama, Hisatoshi Hata, Kenji Shintani, Masashi Kamiya, Daisuke Fujisawa, Mikio Yamamuka, Shotaro Miwa
Publikováno v:
Infrared Technology and Applications XLVIII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a241cfacb5dc7534cc0fced0ac8375c
https://doi.org/10.1117/12.2618715
https://doi.org/10.1117/12.2618715
Autor:
Yasuhiro Kosasayama, Kenji Shintani, Akira Ota, Misaki Hanaoka, Daisuke Fujisawa, Masaharu Hattori, Mikio Yamamuka, Yusuke Yamagata, Yoshinori Takahashi, Hisatoshi Hata, Tomohiro Maegawa, Takashi Takenaga
Publikováno v:
Infrared Technology and Applications XLVII.
We describe uncooled infrared focal plane arrays (IRFPAs), which consist of pn junction diodes fabricated on a silicon-on-insulator (SOI) layer using a complementary metal oxide semiconductor (CMOS) process. Based on this technique, we released the M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d37fb5494daf1fdf08dae61e5728f7b
https://doi.org/10.1117/12.2585853
https://doi.org/10.1117/12.2585853
Autor:
Hisatoshi Hata, Akie Yutani, Yasuhiro Kosasayama, Mikio Yamamuka, Kenji Shintani, Misaki Hanaoka, Daisuke Fujisawa, Masashi Ueno, Takashi Takenaga
Publikováno v:
Infrared Technology and Applications XLVI.
We developed silicon-on-insulator (SOI) diode-based uncooled infrared focal plane arrays (IRFPAs), in which single-crystal pn junction diodes formed in an SOI layer are used as temperature sensors. These diodes, based on silicon large-scale integrati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16f781c43a33af3554dd1e5acc4cce48
https://doi.org/10.1117/12.2558287
https://doi.org/10.1117/12.2558287
Autor:
Hisatoshi Hata, Takashi Takenaga, Koichi Yamashita, Takao Takikawa, Tetsuya Satake, Yasuhiro Kosasayama, Daisuke Suzuki, Daisuke Fujisawa
Publikováno v:
Infrared Technology and Applications XLV.
In this study, we develop a shutter-less algorithm for a silicon-on-insulator (SOI) diode uncooled infrared focal plane array (IRFPA). The optimal non-uniformity correction is calculated onboard. The effectiveness of the proposed algorithm was verifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16dd1efbaa7c7bc4cd744a1587b7b4fe
https://doi.org/10.1117/12.2518773
https://doi.org/10.1117/12.2518773
Autor:
Tetsuya Satake, D. Suzuki, Hisatoshi Hata, T. Takikawa, Daisuke Fujisawa, K. Yamashita, Takashi Takenaga, Yasuhiro Kosasayama
Publikováno v:
Infrared Technology and Applications XLIV.
We develop a shutter-less method for replacing mechanical shutters. To verify the effectiveness of the proposed method, we fabricated a silicon-on-insulator (SOI) diode uncooled 320 × 240 infrared focal plane array (IRFPA) with 17 μm pixel pitch ut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fda0950e0ef04b8f19322b82ab766e34
https://doi.org/10.1117/12.2305165
https://doi.org/10.1117/12.2305165
Publikováno v:
IEEJ Transactions on Fundamentals and Materials. 127:405-410
We have developed chip scale vacuum packaging for an uncooled IRFPA and successfully obtained excellent IR images less than 60 mK in NETD. This package consists of a device chip and a silicon lid. A 160×120 SOI diode uncooled IRFPA with a 25 μm pix
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc88a595e9182cdc2265bfa6cc5e4a94
https://doi.org/10.1541/ieejfms.127.405
https://doi.org/10.1541/ieejfms.127.405
Autor:
Masafumi Kimata, Kazuyo Endo, Tatsuo Ozeki, Hirofumi Yagi, Yasuhiro Kosasayama, Tadashi Shiraishi
Publikováno v:
IEEJ Transactions on Sensors and Micromachines. 117:588-593
A high-performance 801×512-element PtSi Schottky-barrier infrared image sensor has been developed with an enhanced Charge Sweep Device (CSD) readout architecture. In the enhanced CSD, the power consumption of the CSD has been reduced by employing a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16d2b25a3657a01644ec71b88ed70191
https://doi.org/10.1541/ieejsmas.117.588
https://doi.org/10.1541/ieejsmas.117.588
Autor:
Hisatoshi Hata, Tadashi Imai, Masashi Ueno, Munetaka Ueno, Yasuhiro Kosasayama, Daisuke Fujisawa, Hiroshi Ohji, Takahiro Ohnakado, Yasuaki Ohta, Haruyoshi Katayama, Ryota Sato, Tomohiro Maegawa
Publikováno v:
SPIE Proceedings.
We report the development of a 2-million-pixel, that is, a 2000 x 1000 array format, SOI diode uncooled IRFPA with 15 mm pixel pitch. The combination of the shrinkable 2-in-1 SOI diode pixel technology, which we proposed last year [1], and the uncool
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0705431c0a38216f3712d2688ebe0515
https://doi.org/10.1117/12.919520
https://doi.org/10.1117/12.919520
Autor:
Munetaka Ueno, Takaki Sugino, Haruyoshi Katayama, Daisuke Takamuro, Tadashi Imai, Yasuhiro Kosasayama, Masashi Ueno, Hisatoshi Hata, Hiroshi Fukumoto, Tomohiro Maegawa, Kozo Ishida, Takahiro Ohnakado
Publikováno v:
SPIE Proceedings.
Scalable new SOI diode structure has been proposed and developed for beyond 17μm pixel pitch mega-pixel-class SOI diode uncooled infrared focal plane arrays (IRFPAs). Conventionally, each p + n vertical diode is formed between a p + diffusion and an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e05db9f41df4445ad8979b09f76700f
https://doi.org/10.1117/12.884556
https://doi.org/10.1117/12.884556
Autor:
Yasuhiro Kosasayama, Keisuke Kama, Takaki Sugino, Yasuaki Ohta, Masahiro Tsugai, Hisatoshi Hata, Takanori Ohno, Takahiro Ohnakado, Masashi Ueno, Hiroshi Fukumoto
Publikováno v:
SPIE Proceedings.
We have developed a novel readout circuit architecture realizing a TEC-less (Thermo-Electric Cooler) operation for an SOI diode uncooled infrared focal plane array (IRFPA). Through the fabrication of an SOI diode uncooled 320 x 240 IRFPA adopting the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82dc92c32684a7b8646fe4b6a1c69b0a
https://doi.org/10.1117/12.818418
https://doi.org/10.1117/12.818418