Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Yasuhiro Kida"'
Autor:
Katsuhiko Shirasawa, Hidetaka Takato, Supawan Joonwichien, Satoshi Utsunomiya, Yasuhiro Kida, Masaaki Moriya
Publikováno v:
IEEE Journal of Photovoltaics. 10:407-416
This article investigates metallization-induced recombination losses associated with the presence of silicon (Si) in the 1) rear passivation layers and 2) aluminum (Al) paste in fully screen-printed p -type passivated emitter and rear cell (PERC) sol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1d67a1e81c4ff6ecd57d73b9e269779
https://doi.org/10.1109/jphotov.2019.2962337
https://doi.org/10.1109/jphotov.2019.2962337
Autor:
Hidetaka Takato, Masaaki Moriya, Yasuhiro Kida, Tomihisa Tachibana, Katsuhiko Shirasawa, Koji Sueoka, Katsuto Tanahashi, Satoshi Ustunomiya
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P596-P601
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6109f36a89757e06830e1708576aa66d
https://doi.org/10.1149/2.0191910jss
https://doi.org/10.1149/2.0191910jss
Autor:
Hidetaka Takato, Yasuhiro Kida, Masaaki Moriya, Supawan Joonwichien, Katsuhiko Shirasawa, Satoshi Utsunomiya
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
We propose a physical mechanism that explains the local contact formation stimulated by the aluminum-silicon (Al-Si) interdiffusion within the various widths of Al rear grid for bifacial-passivated emitter and rear cell (Bi-PERC). The rear sides of B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45a3ff4718d10583b5c68470222d6ce6
https://doi.org/10.1109/pvsc45281.2020.9300954
https://doi.org/10.1109/pvsc45281.2020.9300954
Autor:
Hidetaka Takato, Yasuhiro Kida, Katsuhiko Shirasawa, Satoshi Utsunomiya, Supawan Joonwichien, Masaaki Moriya
Publikováno v:
Solar Energy Materials and Solar Cells. 186:84-91
This paper presents the development of industrial-sized p-type passivated emitter and rear cells (PERCs) with a selective emitter (SE) structure. We focus on different assisted passivation schemes and use nitric acid oxidation of silicon (NAOS) to fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::184cc7c77b7c75f14b665eefceb72a79
https://doi.org/10.1016/j.solmat.2018.06.018
https://doi.org/10.1016/j.solmat.2018.06.018
Autor:
Supawan Joonwichien, Katsuhiko Shirasawa, Masaaki Moriya, Yasuhiro Kida, Satoshi Utsunomiya, Hidetaka Takato
Publikováno v:
IEEE Journal of Photovoltaics. :1-7
This paper introduces a selective phosphorus emitter formed by screen-printed resist masking combined with a wet chemical etch-back process for an industrial-sized passivated emitter and rear cell (PERC). Applying the selective emitter (SE) concept i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51c9875a1d9e36326eafcfc93f80f2a7
https://doi.org/10.1109/jphotov.2018.2806838
https://doi.org/10.1109/jphotov.2018.2806838
Autor:
Katsuhiko Shirasawa, Yasuhiro Kida, Supawan Joonwichien, Masaaki Moriya, Satoshi Utsunomiya, Hidetaka Takato
Publikováno v:
IEEE Journal of Photovoltaics. 8:54-58
We attempted to improve the performance of passivated emitter and rear cells by increasing the quality of the aluminum back surface field (Al-BSF) beneath the local contact. We demonstrate that a thicker Al-BSF can be obtained by adding Si to the scr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::825c7b67d9a37b57ccc9738c751688e1
https://doi.org/10.1109/jphotov.2017.2767604
https://doi.org/10.1109/jphotov.2017.2767604
Autor:
Masaaki Moriya, Tetsuo Fukuda, Katsuhiko Shirasawa, Yasuhiro Kida, Satoshi Utsunomiya, Hidetaka Takato, Katsuto Tanahashi
Publikováno v:
IEEE Journal of Photovoltaics. 7:741-746
The impact of the post-implantation annealing conditions on the electrical characteristics of P-implanted homogeneous emitter silicon solar cells with aluminum-back surface field, 156 mm × 156 mm in size, is investigated. Based on a measurement of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1286ab850b647fdc71d724f7055dc5df
https://doi.org/10.1109/jphotov.2017.2679346
https://doi.org/10.1109/jphotov.2017.2679346
Publikováno v:
IEEE Journal of Photovoltaics. 7:458-462
BBr3 and POCl3 thermal diffusion is a widely used technique for p- and n-type emitter formation in bifacial solar cell fabrication. However, single-side doping of BBr3 or POCl3 is difficult to achieve through gas diffusion carried out at high tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63c5a4e90f4953295c0ff2c626aedb98
https://doi.org/10.1109/jphotov.2016.2646060
https://doi.org/10.1109/jphotov.2016.2646060
Autor:
Supawan Joonwichien, Masaaki Moriya, Satoshi Utsunomiya, Yasuhiro Kida, Katsuhiko Shirasawa, Hidetaka Takato
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
We present metal-induced recombination losses associated with the silicon (Si) present both within rear passivation layers and in aluminum (Al) paste for passivated emitter and rear cells (PERCs) with full-area Al screen-printed contacts. In the form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fa83fba425d2236bd06a0fd8d927cd4
https://doi.org/10.1109/pvsc40753.2019.8981135
https://doi.org/10.1109/pvsc40753.2019.8981135
Autor:
Yasuhiro Kida, Hidetaka Takato, Satoshi Utsunomiya, Masaaki Moriya, Katsuhiko Shirasawa, Supawan Joonwichien
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
We demonstrate the improvement of phosphorus emitter passivation for an industrial-sized passivated emitter and rear cell (PERC) with selective emitter (SE) structure using a method of nitric acid oxidation of silicon (NAOS) to form ultrathin SiO 2 l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ead0c248206edd1b56a85c07b7c53e21
https://doi.org/10.1109/pvsc.2018.8548191
https://doi.org/10.1109/pvsc.2018.8548191