Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Yasuhiro Isobe"'
Autor:
Masataka Tsuji, Kentaro Ikeda, Masahiro Koyama, Toru Sugiyama, Akira Yoshioka, Hung Hung, Takenori Yasuzumi, Yosuke Kajiwara, Yasuhiro Isobe, Shinichi Umekawa, Yiyao Liu, Yusuke Sato
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
We describe a proposed cascode GaN device configuration that allows stable operation during zero voltage switching (ZVS) turn-on transition and suppresses non-ZVS losses. We verified that application of our proposed device to an LLC resonant converte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82b2f24ae16cabe2dc1a46e0e61a54e2
https://doi.org/10.1109/ispsd46842.2020.9170130
https://doi.org/10.1109/ispsd46842.2020.9170130
Autor:
Yasuhiro Isobe, Hung Hung, Kohei Oasa, Tasuku Ono, Takashi Onizawa, Akira Yoshioka, Yoshiharu Takada, Yasunobu Saito, Naoharu Sugiyama, Kunio Tsuda, Toru Sugiyama, Ichiro Mizushima
Publikováno v:
Journal of Applied Physics; 2017, Vol. 121 Issue 23, p1-6, 6p
Publikováno v:
Flow Measurement and Instrumentation. 76:101752
High accuracy mass flow measurement is an enabling technology at the base of many industries. HORIBA STEC Co., Ltd. developed its own primary gas mass flow measurement system. We employed the dynamic gravimetric method in a vacuum chamber, and we use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4754626ae3f82d28a859338bd63cde93
https://doi.org/10.1016/j.flowmeasinst.2020.101752
https://doi.org/10.1016/j.flowmeasinst.2020.101752
Autor:
Osamu Oda, Makoto Sekine, Kyoichi Suguro, Yasuhiro Isobe, Amalraj Frank Wilson, Naohiro Shimizu, Takayuki Sakai, Masaru Hori, Naoto Miyashita, Hiroki Kondo, Kenji Ishikawa
Publikováno v:
Journal of Vacuum Science & Technology B. 37:061215
Nitrogen atoms are versatile for nitridation applications and do not lead to plasma-induced damage. Large-sized wafer processing demands a uniform supply of nitrogen atoms produced in a high-density very-high-frequency excited plasma of N2 without am
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97b793c40242f7a2a020b498663b8562
https://doi.org/10.1116/1.5114831
https://doi.org/10.1116/1.5114831
Autor:
Naohiro Shimizu, Amalraj Frank Wilson, Osamu Oda, Naoto Miyashita, Yi Lu, Dhasiyan Arun Kumar, Kyoichi Suguro, Takayuki Sakai, Makoto Sekine, Masaru Hori, Ichiro Mizushima, Nobuyuki Ikarashi, Naoharu Sugiyama, Kenji Ishikawa, Hiroki Kondo, Yasuhiro Isobe
Publikováno v:
Journal of Vacuum Science & Technology B. 37:031201
Epitaxial growth of GaN films at a low temperature of 800 °C was studied in radical-enhanced metal-organic chemical vapor deposition, focusing on the discharge region of the plasma of a mixture of N2 and H2 gases. The effect of plasma confinement on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58825751b15994e87eca7d60598aa26d
https://doi.org/10.1116/1.5083970
https://doi.org/10.1116/1.5083970
Autor:
Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano, Isamu Akasaki, Tatsuyuki Sakakibara, Yusuke Mori, Yasuhiro Isobe, Tetsuya Takeuchi, Hiromichi Ikki, Takayuki Sugiyama, Mamoru Imade
Publikováno v:
Journal of Crystal Growth. 351:126-130
We investigated unintentionally doped nonpolar a- and m-plane GaN layers grown by metalorganic vapor phase epitaxy under several sets of conditions on freestanding a- and m-plane GaN substrates. Oxygen contamination in a-plane GaN is greatly reduced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39bf6905cafd8d988afa0cb9c495c15c
https://doi.org/10.1016/j.jcrysgro.2012.04.030
https://doi.org/10.1016/j.jcrysgro.2012.04.030
Autor:
Masahito Yamaguchi, Motoaki Iwaya, Yasuhiro Isobe, Takayuki Sugiyama, Y. Mori, Isamu Akasaki, S. Kamiyama, Yoshio Honda, Yasuo Kitaoka, Mamoru Imade, Hiroshi Amano, Tetsuya Takeuchi
Publikováno v:
physica status solidi c. 9:875-878
We measured drain bias stress effects and current collapse in AlGaN/ GaN heterostructure field-effect transistors (HFETs) on a-plane and c-plane GaN substrates. An a-plane AlGaN/GaN HFET (a-HFET) shows small current collapse with a threshold voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1870f21ae1a9ad9a4f7923faff1ef349
https://doi.org/10.1002/pssc.201100397
https://doi.org/10.1002/pssc.201100397
Autor:
Hiroshi Amano, Tetsuya Takeuchi, Isamu Akasaki, Satoshi Kamiyama, Daisuke Iida, Yasuhiro Isobe, Mamoru Imade, Tatsuyuki Sakakibara, Motoaki Iwaya, Yusuke Mori, Yasuo Kitaoka
Publikováno v:
physica status solidi (a). 208:1191-1194
We fabricated and characterized AlGaN/GaN heterostructure growth by MOVPE on vicinal m-plane free-standing GaN substrates prepared by the Na flux method. The miscut angle in the LPE-GaN substrate has a great influence on the surface morphology and cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a28db6201b11562325640d3773c550e1
https://doi.org/10.1002/pssa.201001019
https://doi.org/10.1002/pssa.201001019
Autor:
Yasuhiro Isobe, Isamu Akasaki, Satoshi Kamiyama, Motoaki Iwaya, Hiromichi Ikki, Kazuya Ikeda, Tatsuyuki Sakakibara, Hiroshi Amano, Tetsuya Takeuchi
Publikováno v:
physica status solidi c. 9:942-944
We report on the electrical properties of AlInN/GaInN heterostructures fabricated with InN molar fractions of 0 to 0.6 in the GaInN layer. High-density two-dimensional electron gases are formed near the interfaces of AlInN/AlN/GaInN at InN molar frac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::860389beace888d825d6e0db38aae751
https://doi.org/10.1002/pssc.201100492
https://doi.org/10.1002/pssc.201100492
Autor:
Motoaki Iwaya, Isamu Akasaki, Satoshi Kamiyama, Hiromichi Ikki, Daisuke Iida, Yasuhiro Isobe, Akira Bandoh, Takashi Udagawa, Hiroshi Amano, Tetsuya Takeuchi
Publikováno v:
physica status solidi (a). 208:1614-1616
We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea332a33d84bed74812d9c0a3e903447
https://doi.org/10.1002/pssa.201001153
https://doi.org/10.1002/pssa.201001153