Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Yasuhiro Iriuchijima"'
Autor:
Toshiyuki Sekito, Yasuhiro Iriuchijima, Katsushi Nakano, Soichi Owa, Rei Seki, Toshihiko Sei, Yoshihiro Maruta, Tsunehito Hayashi, Tomoharu Fujiwara, Kenichi Shiraishi, Tadamasa Kawakubo
Publikováno v:
SPIE Proceedings.
Double patterning (DP) is the first candidate for extension of ArF immersion lithography, and topcoat-less (TC-less) process is an attractive process candidate compared to a topcoat process because it can make DP process simpler and reduce the chip m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6110aecfaa49b34d2e530e425b6e7a75
https://doi.org/10.1117/12.846520
https://doi.org/10.1117/12.846520
Autor:
Yuichi Shibazaki, Yasuhiro Iriuchijima, Hirotaka Kohno, Masato Hamatani, Jun Ishikawa, Junichi Kosugi
Publikováno v:
SPIE Proceedings.
Currently, it is considered that one of the most favorable options for the 32 nm HP node is pitch-splitting double patterning, which requires the lithography tool to achieve high productivity and high overlay accuracy simultaneously. In the previous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b8b66a6a09aa42b1c1ddc8cc880dd71
https://doi.org/10.1117/12.846485
https://doi.org/10.1117/12.846485
Autor:
Yuuki Ishii, Ryo Tanaka, Andrew J. Hazelton, Masahiko Yasuda, Takahisa Kikuchi, Yosuke Shirata, Kengo Takemasa, Yasuhiro Iriuchijima
Publikováno v:
SPIE Proceedings.
Double patterning (DP) has become the most likely candidate to extend immersion lithography to the 32 nm node and beyond. This paper focuses on experimental results of 32nm half pitch patterning using NSR-S620D, the latest Nikon ArF immersion scanner
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ca6149960300f71a4c88a2c4cd5fe41
https://doi.org/10.1117/12.846486
https://doi.org/10.1117/12.846486
Publikováno v:
SPIE Proceedings.
Double patterning (DP), an extension of immersion, is the leading contender for the manufacturing of 32 nm half pitch node devices. For DP, substantial improvement in overlay accuracy is required to meet the CDU requirements for the 32 nm node, and s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c43c74d8a0de4b099cc07fc16512814
https://doi.org/10.1117/12.837037
https://doi.org/10.1117/12.837037
Autor:
Katsushi Nakano, Masato Yoshida, Yasuhiro Iriuchijima, Tomoharu Fujiwara, Rei Seki, Toshiyuki Sekito, Soichi Owa
Publikováno v:
SPIE Proceedings.
Volume device manufacturing using immersion lithography is widely accepted as the solution for patterning IC features below 40 nm half pitch. In order to ensure high yield and steady productivity tight control of defectivity is essential. A major sou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a690e0843ff897168b4958727bbea06c
https://doi.org/10.1117/12.814238
https://doi.org/10.1117/12.814238
Autor:
Yuuki Ishii, Yasuhiro Iriuchijima, Natsuko Sagawa, Katsushi Nakanob, Hamid R. Khorram, Tadamasa Kawakubo, Shirou Nagaoka, Tomoharu Fujiwara
Publikováno v:
Advances in Resist Materials and Processing Technology XXVI.
Immersion lithography has gone through its first phase of introduction and acceptance as the main solution for critical layer lithography for 45nm node and beyond. In this phase, the industry has found that immersion technology has its own unique cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7407764aba220effec50c73fd76bbd4
https://doi.org/10.1117/12.814946
https://doi.org/10.1117/12.814946
Autor:
Masato Yoshida, Kenichi Shiraishi, Soichi Owa, Yasuhiro Iriuchijima, Shiro Nagaoka, Tomoharu Fujiwara, Katsushi Nakano
Publikováno v:
Optical Microlithography XXI.
Volume production of 45nm node devices utilizing Nikon's S610C immersion lithography tool has started. Important to the success in achieving high-yields in volume production with immersion lithography has been defectivity reduction. In this study we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b74dbe61d043ca53ebbaa94a32d65cf
https://doi.org/10.1117/12.772270
https://doi.org/10.1117/12.772270
Autor:
Tomoharu Fujiwara, Haiping Zhang, Hiroshi Kato, Irfan Malik, Christine Pelissier, Kenichi Shiraishi, Yasuhiro Iriuchijima, Prasad Terala, Soichi Owa, Steve Woodman, Katsushi Nakano
Publikováno v:
SPIE Proceedings.
ArF immersion lithography has become accepted as the critical layer patterning solution for lithography going forward. Volume production of 55 nm devices using immersion lithography has begun. One of the key issues for the success of volume productio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87bd84adbaf8ca9f9dbe4b2d83ae26e0
https://doi.org/10.1117/12.711464
https://doi.org/10.1117/12.711464