Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Yasuhiko Taito"'
Autor:
Masaya Nakano, Yoshinobu Kaneda, Satoru Nakanishi, Yasumitsu Murai, Yosuke Tashiro, Yasuhiko Taito, Tomoya Ogawa, Hidenori Mitani, Takashi Ito, Takashi Kono
Publikováno v:
IEEE Journal of Solid-State Circuits. 57:3094-3102
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dd45dfbfed41459c1fc7027c0665991
https://doi.org/10.1109/jssc.2022.3168069
https://doi.org/10.1109/jssc.2022.3168069
Publikováno v:
IEEE Journal of Solid-State Circuits. 57:3-5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aae779b53a1da1bf00fca98dd294a79
https://doi.org/10.1109/jssc.2021.3127053
https://doi.org/10.1109/jssc.2021.3127053
Autor:
Takahiro Shimoi, Ken Matsubara, Tomoya Saito, Tomoya Ogawa, Yasuhiko Taito, Yoshinobu Kaneda, Masayuki Izuna, Koichi Takeda, Hidenori Mitani, Takashi Ito, Takashi Kono
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba2dc819fb1cf021c7ad395091309952
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830273
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830273
Publikováno v:
IEICE Transactions on Electronics. :132-143
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1331226ccdba96dcec5d4d635386259
https://doi.org/10.1587/transele.2019cdi0001
https://doi.org/10.1587/transele.2019cdi0001
Autor:
Masaya Nakano, Yoshinobu Kaneda, Koichi Takeda, Takahiro Shimoi, Yasunobu Aoki, Satoru Nakanishi, Yosuke Tashiro, Yasuhiko Taito, Ken Matsubara, Munekatsu Nakagawa, Tomoya Ogawa, Takashi Kurafuji, Hidenori Mitani, Takashi Ito, Takashi Kono
Publikováno v:
2021 IEEE Asian Solid-State Circuits Conference (A-SSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8387108e340cae168a1c50eab79bde98
https://doi.org/10.1109/a-sscc53895.2021.9634782
https://doi.org/10.1109/a-sscc53895.2021.9634782
Autor:
Takashi Kurafuji, Koichi Takeda, Tomoya Ogawa, Yasuhiko Taito, Masaya Nakano, Takashi Kono, Takashi Ito, Hiroyuki Kondo, Akihiko Kanda, Kazuo Yoshihara
Publikováno v:
IEEE Solid-State Circuits Letters. 2:273-276
This letter presents an embedded flash (eFlash) system based on 28-nm split-gate MONOS (SG-MONOS) with high- ${k}$ metal gate CMOS process technology for automotive applications. It contains the world’s largest 24-MB memory capacity (4-MB code flas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f31c565738295b5d1a288719142e4a0
https://doi.org/10.1109/lssc.2019.2948813
https://doi.org/10.1109/lssc.2019.2948813
Publikováno v:
ISSCC
A 3D NAND flash memory continues to increase in bit density and performance for both local and cloud data storage applications. The number of WL layers increases to more than 170 layers, up from 96-128 layers presented previously at ISSCC. A floorpla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daa74725e79f065c5fce84ef5fb4dc15
https://doi.org/10.1109/isscc42613.2021.9365847
https://doi.org/10.1109/isscc42613.2021.9365847
Autor:
Akihiko Kanda, Kazuo Yoshihara, Hiroyuki Kondo, Tomoya Ogawa, Masaya Nakano, Koichi Takeda, Takashi Kurafuji, Takashi Ito, Takashi Kono, Yasuhiko Taito
Publikováno v:
VLSI Circuits
This paper presents an embedded Flash system based on 28nm SG-MONOS technologies for automotive. It contains the world’s largest 24MB code Flash memories and achieves 240MHz random read access at Tj of 170°C and -40°C. The peak current for progra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22a49bb36edf6e3e8b75b6fafae0e97a
https://doi.org/10.23919/vlsic.2019.8778107
https://doi.org/10.23919/vlsic.2019.8778107
Autor:
Kenji Noguchi, Takashi Kono, Takashi Ito, Tomoya Saito, Yasuhiko Taito, Hideto Hidaka, Masaya Nakano, Tadaaki Yamauchi
Publikováno v:
IEEE Journal of Solid-State Circuits. 51:213-221
First-ever 28 nm embedded split-gate MONOS (SG-MONOS) flash macros have been developed to increase memory capacity embedded in micro controller units and to improve performance over wide junction temperature range from $-40^{\circ}{\hbox {C}}$ to 170
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8179b8b0deba5102eba74090f2ae3fb1
https://doi.org/10.1109/jssc.2015.2467186
https://doi.org/10.1109/jssc.2015.2467186
Autor:
Takashi Ito, Yasuhiko Taito
Publikováno v:
Integrated Circuits and Systems ISBN: 9783319553054
Embedded Flash Memory for Embedded Systems
Embedded Flash Memory for Embedded Systems
Technological details about SONOS split-gate eFlash memory are described. First, memory cell structure, basic cell-operation principles and eFlash-fabrication process are introduced. Subsequently, basic array architecture and read/program/erase opera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ea504231f73749c623c2ee97317e791
https://doi.org/10.1007/978-3-319-55306-1_7
https://doi.org/10.1007/978-3-319-55306-1_7
