Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Yasuhiko Sugiyama"'
Autor:
Kinoshita Masaharu, N. Ushifusa, Atsushi Isobe, Yoshitaka Sasago, C. Yorita, Hitoshi Nakamura, Yohei Nakamura, Toshiyuki Usagawa, Kohei Yoshikawa, K. Okishiro, K. Ono, Yumiko Anzai, Koji Fujisaki, S. Komatsu, Takahiro Odaka, Shuntaro Machida, Taizo Yamawaki, Yasuhiko Sugiyama
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We have developed a SiC-FET-type gas sensor that enables highly sensitive NO detection in high-temperature exhaust gas. The gate of the FET is a gas detection layer consisting of yttria-stabilized zirconia, nickel oxide, and platinum, which are depos
Autor:
Mako Shirouzu, Sozo Inoue, Tatsuya Isoda, Mari Hirata, Naoki Nakashima, Kyoko Machida, Yasunobu Nohara, Yasuhiko Sugiyama
Publikováno v:
Proceedings of the ISCIE International Symposium on Stochastic Systems Theory and its Applications. 2016:196-203
In recent years, big data are utilized in many industries.In this study, in order to analyze duties of thenurses, we performed experiments to collect the dutiesactivity data of the nurses for a long term. Weset 38 nurses as subjects and asked them to
Autor:
Yasuhiko Sugiyama, Misuzu Sagawa, Hideaki Kurata, Morishita Masatoshi, Shuntaro Machida, Kinoshita Masaharu, Hiroshi Oba, Matsui Ryohei, Daisuke Ryuzaki, Toshiyuki Mine, Watanabe Keiji, Nobuyuki Sugii, Koji Fujisaki, Shinji Nishimura
Publikováno v:
2018 IEEE Micro Electro Mechanical Systems (MEMS).
This paper reports a novel method that reduces fabrication period of customized MEMS sensors. A 3D printing method with a high-current plasma focused ion beam (FIB) system was developed and applied to MEMS sensor fabrication for the first time. Capac
Autor:
Sozo Inoue, Yasuhiko Sugiyama, Naoki Nakashima, Tatsuya Isoda, Mako Shirouzu, Yasunobu Nohara
Publikováno v:
UbiComp Adjunct
In this paper, we integrate nurse activity data, location data, and medical records to predict the nursing load of every day, assuming the application for task allocation for nurses. We collected nurse activity data, location data, medical payment da
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 8:174-177
The emitter shape dependence of the ion current from a gas field ion source (GFIS) was examined using numerical simulations. The simulator is constructed by an electric field calculation program and the spread sheets which were developed by authors b
Publikováno v:
Journal of Electron Microscopy. 53:493-496
A novel technique for post-thinning of lifted-out membranes already mounted on a mesh was developed using a Ga(+) ion beam at an accelerating voltage of 5 kV. It was applied to the preparation of transmission electron microscopy specimens from a sele
Autor:
Osamu Takaoka, Toshio Doi, Masashi Muramatsu, Koji Nakamae, Anto Yasaka, Yasuhiko Sugiyama, Ryoji Hagiwara, Osamu Matsuda, Tomokazu Kozakai, Fumio Aramaki
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2121-2123
Focused ion beam (FIB) technology has widely been adopted as a defect repair tool on photomasks for semiconductor manufacturing. In the FIB mask repair process, scanning ion image (FIB image) is used for the defect area recognition. Quality of the FI
Autor:
Kazuo Aita, Anto Yasaka, Hiroshi Oba, Fumio Aramaki, Tomokazu Kozakai, Osamu Matsuda, Yasuhiko Sugiyama, Osamu Takaoka
Publikováno v:
SPIE Proceedings.
Recently, most of defects on high-end masks are repaired with electron beam (EB). The minimum repairable dimension of the current state-of-the-art repair systems is about 20-30 nm, but that dimension is not small enough to repair the next generation
Autor:
Tomokazu Kozakai, Anto Yasaka, Fumio Aramaki, Tsuyoshi Amano, Takashi Ogawa, Osamu Suga, Hiroshi Oba, Hiroyuki Shigemura, Osamu Matsuda, Yasuhiko Sugiyama
Publikováno v:
SPIE Proceedings.
The next generation EUVL masks beyond hp15nm are difficult to repair for the current repair technologies including focused ion beam (FIB) and electron beam (EB) in view of the minimum repairable size. We developed a new FIB technology to repair EUVL
Publikováno v:
2009 22nd International Vacuum Nanoelectronics Conference.
Now a day, focused ion beam (FIB) systems equipped with a gallium liquid metal ion source (Ga-LMIS) have been used in the wide areas, e.g., photo-mask repair for semiconductor devices, micro-fabrication for MEMS, sample preparation for TEM and so on.