Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Yasufumi Takagi"'
Autor:
Shigeomi Yokoya, Naoto Shiomi, Hidesato Takezawa, Tetsuya Katsumori, Hideki Oka, Sho Nishii, Yukihiro Goto, Yasufumi Takagi, Akihiko Hino
Publikováno v:
Asian Journal of Neurosurgery
The most preferred treatment for organized chronic subdural hematoma (OSDH) remains controversial. Although a large craniotomy has been reported to be necessary and effective for the treatment of an OSDH, a craniotomy is associated with postoperative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d953468ea70c5d6f336a565085579cc
http://europepmc.org/articles/PMC7335123
http://europepmc.org/articles/PMC7335123
Publikováno v:
Journal of neurosurgery. Spine.
OBJECTIVEOne of the technical problems encountered in performing lumboperitoneal shunt (LPS) surgery involves operative positioning of the patient. To insert the spinal catheter into the subarachnoid lumbar space, LPS is usually performed with the pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87bcd43ece2ca7824e30efe65552d9fb
https://pubmed.ncbi.nlm.nih.gov/31860824
https://pubmed.ncbi.nlm.nih.gov/31860824
Publikováno v:
Journal of Luminescence. 132:3113-3117
Recent progress on light-emitting diode having a Eu-doped GaN active layer is reported. Although the first success on LED using GaN:Eu has been achieved by OMVPE, the factors to be controlled during the crystal growth are not well understood. We foun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::982bd0998ec54a3a6433198fdefd6b1e
https://doi.org/10.1016/j.jlumin.2012.02.001
https://doi.org/10.1016/j.jlumin.2012.02.001
Autor:
K. Umeno, Hirofumi Kan, Yasufumi Takagi, Hiroo Yonezu, Yuzo Furukawa, Akihiro Wakahara, R. Noma, Hiroshi Okada
Publikováno v:
Journal of Crystal Growth. 311:1748-1753
We demonstrated an appropriate growth procedure for GaAsN/GaP(N) single quantum wells (SQWs) with abrupt heterointerfaces in solid-source molecular beam epitaxy able to prevent the formation of unwanted As/P intermixing layers caused by residual As p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbddc0afe782cd9fe7963ea0607abdb8
https://doi.org/10.1016/j.jcrysgro.2008.10.075
https://doi.org/10.1016/j.jcrysgro.2008.10.075
Autor:
Minoru Niigaki, Nobuharu Suzuki, Hiroyuki Takatsuka, Hideaki Suzuki, Haruyasu Kondoh, Shoichi Uchiyama, Yasuo Ohishi, Yasufumi Takagi, Kazuyoshi Okano, Hirofumi Kan
Publikováno v:
physica status solidi c. 4:2850-2853
We have designed and fabricated new photo-tubes and photomultiplier tubes (PMTs) using InxGa1-xN films as photocathodes. Longer spectral cutoffs were controlled with Indium compositions x, from 365 nm to 430 nm. The calibrated maximum quantum efficie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4381cd1735f11f0bee7229d6722ec4c
https://doi.org/10.1002/pssc.200674776
https://doi.org/10.1002/pssc.200674776
Publikováno v:
Applied Physics Express. 11:012701
We report on nitride-based two-stack laser diodes with a tunnel junction for the first time. The stacked laser diode was monolithically grown by metalorganic vapor phase epitaxy. It was confirmed that the two-stack InGaN/GaN multiple-quantum-well las
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e185ea1edc5be2499342673df6611b31
https://doi.org/10.7567/apex.11.012701
https://doi.org/10.7567/apex.11.012701
Publikováno v:
Journal of Applied Physics. 86:1331-1339
We investigated the formation process of cross-hatch patterns (CHPs) and the lattice relaxation process in the growth of an (InAs)1(GaAs)4 strained short-period superlattice (SSPS) and an In0.2Ga0.8As alloy layer on GaAs(100) substrates. By using x-r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1523f6bdbb8daab84613f253114ac5a9
https://doi.org/10.1063/1.370891
https://doi.org/10.1063/1.370891
Publikováno v:
Japanese Journal of Applied Physics. 46:5782-5784
We have succeeded in fabricating ultraviolet (UV) GaN/AlGaN laser diodes without any crack generation on a whole 2-in. sapphire substrate using a hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO) method. The UV laser diodes lased i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0833a25406dad01a90f14e4fe3254a55
https://doi.org/10.1143/jjap.46.5782
https://doi.org/10.1143/jjap.46.5782
Autor:
I. Hernández-Calderón, M.E. Constantino, Yasufumi Takagi, M. A. Vidal, Hiroo Yonezu, K. Samonji, J. Luyo-Alvarado, Máximo López-López, M. Meléndez-Lira, Hugo R. Navarro-Contreras
Publikováno v:
Scopus-Elsevier
ZnSe films with thickness between 800 and 7500 A were grown on GaAs(100) by molecular beam epitaxy (MBE), and characterized by photoluminescence (PL), photoreflectance (PR), transmission electron microscopy (TEM), and high resolution x-ray diffractio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0afa11915eca2a16156963d0e0253dc5
https://doi.org/10.1063/1.368222
https://doi.org/10.1063/1.368222
Publikováno v:
Journal of Crystal Growth. 187:42-50
We have investigated the generation process of crystalline defects in GaP layers grown on Si substrates (GaP/Si) by molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE). Transmission electron microscopy observations revealed that few thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8705bf7caac90d28b25b38f097b913c6
https://doi.org/10.1016/s0022-0248(97)00862-2
https://doi.org/10.1016/s0022-0248(97)00862-2