Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Yasufumi Kawai"'
Publikováno v:
ASICON
Several new technologies for GaN high frequency devices and GaN power devices are reviewed. Newly developed GaN devices have a superior performance over conventional Si ones in view of lowering the energy loss and reducing the system size. Normally-o
Autor:
Shuichi Nagai, Tsuguyasu Hatsuda, Osamu Tabata, Yasufumi Kawai, Songbek Che, Shingo Enomoto, Noboru Negoro, Yoshiharu Anda
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
Fast switching operation of power electronics systems is significantly advantageous for reducing volume of passive components and increasing power density in the systems. Next generation power devices, such as GaN gate-injection transistor (GIT), are
Autor:
Shuichi Nagai, Hiroaki Ueno, Kenji Mizutani, Tetsuzo Ueda, Yasuhiro Yamada, Masahiro Ishida, Yuji Kudoh, Noboru Negoro, Yasufumi Kawai, Nobuyuki Otsuka, Daisuke Ueda, Hiroyuki Handa, Miori Hiraiwa
Publikováno v:
ECS Transactions. 64:41-49
In this paper, we describe compact isolated gated drivers with Drive-by-Microwave (DBM) technology, which can provide isolated gate signal and power all together by a microwave wireless power transmission. The fabricated GaN gate driver successfully
Autor:
Shuichi Nagai, Hiroaki Ueno, Noboru Negoro, Yasuhiro Yamada, Miori Hiraiwa, Masahiro Ishida, Songbaek Choe, Yasufumi Kawai, Osamu Tabata, Go Yamada
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A compact and fast GaN bi-directional switching diode is described, which is integrated with a GaN/Si bi-directional power switch and a Drive-by-Microwave (DBM) isolated gate driver using a microwave wireless power transfer. The fabricated 600V 15A G
Autor:
Osamu Tabata, Nobuyuki Otsuka, Noboru Negoro, Masahiro Ishida, Yasufumi Kawai, Hideaki Fujiwara, Shuichi Nagai, Hiroaki Ueno
Publikováno v:
2015 IEEE 11th International Conference on Power Electronics and Drive Systems.
A low-cost and small size inverter module is required for a low-power motor system. In this work, we developed a compact GaN inverter module that is composed of GaN-GIT power devices and DBM (Drive-by-Microwave) gate drivers. The fabricated compact 5
Autor:
Takashi Kita, Hisao Yanagi, Toru Noguchi, Yosuke Hayashi, Yasufumi Kawai, Akira Magario, Osamu Wada
Publikováno v:
Japanese Journal of Applied Physics. 45:L1186-L1189
Carbon nanotube (CNT)/elastomer nanocomposites (CECs) are flexible and easy to fabricate accordng to the required size and form. We succeeded in realizing a uniform dispersion of CNTs in the elastomer matrices of natural rubber (NR). Intense electron
Autor:
Yousuke Hayashi, Yasufumi Kawai, Toru Noguchi, Takashi Kita, Akira Magario, Shunsuke Fujii, Hisao Yanagi
Publikováno v:
Japanese Journal of Applied Physics. 45:L650-L653
We have succeeded in homogeneously dispersing multi-walled carbon nanotubes (MWNTs) into an aluminum (Al) matrix by a novel elastomer precursor method. In thus prepared composite, the disentangled MWNTs were tightly bound to the Al matrix via oxygen-
Autor:
Shuichi Nagai, Yasufumi Kawai, Hideaki Fujiwara, Osamu Tabata, Noboru Negoro, Nobuyuki Otsuka, Masahiro Ishida
Publikováno v:
2014 16th European Conference on Power Electronics and Applications.
Autor:
Daisuke Ueda, Yasufumi Kawai, Hideaki Fujiwara, Nobuyuki Otsuka, Osamu Tabata, Shuichi Nagai, Noboru Negoro, Yasuhiro Yamada, Masahiro Ishida
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
A new isolated Drive-by-Microwave (DBM) gate driver with a high-speed voltage monitoring for over current detection is proposed, which is composed of a 2.4GHz GaN/Si DBM transmitter, DBM receiver chip and compact isolated couplers in a low-cost print
Autor:
Shuichi Nagai, Daisuke Ueda, Noboru Negoro, Nobuyuki Otsuka, Yasufumi Kawai, Masahiro Ishida, Osamu Tabata, Hideaki Fujiwara
Publikováno v:
2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014.
A low cost and compact isolated gate driver with Drive-by-Microwave technology is developed, which consists of 2.4 GHz GaN/Si transmitter and receiver chips and the butterfly isolation coupler that integrated in a printed circuit board based package.