Anisotropic surface segregation of indium atoms in molecular beam epitaxy of InGaAs/GaAs quantum wells.

Autor: Yamaguchi, Koichi, Yasuda, Yoshikatsu, Kovács, András, Barna, Peter B.

Publikováno v: Journal of Applied Physics; 1/1/2001, Vol. 89 Issue 1, p217, 4p, 1 Black and White Photograph, 1 Diagram, 1 Chart, 3 Graphs