Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Yasser A. Shokr"'
Autor:
Lutfi Bilal Tasyurek, Frowin Dörr, Mustafa Erkovan, Yasser A. Shokr, Necmettin Kilinc, Paul Fumagalli
Publikováno v:
Engineering Proceedings, Vol 56, Iss 1, p 171 (2023)
In this study, EuS thin films with varying thicknesses (15, 25, and 50 nm) were deposited onto a Si/SiO2 substrate using e-beam evaporation. Subsequently, two Ag contact electrodes with a 0.2 mm spacing were prepared via thermal evaporation using a s
Externí odkaz:
https://doaj.org/article/a325bc98e9a74c929a1de1cfd6ae9b1a
Publikováno v:
AIP Advances, Vol 9, Iss 3, Pp 035016-035016-5 (2019)
A persistent challenge in the field of spintronics is the search for suitable materials that enable the circumvention of the impedance mismatch preventing efficient spin-injection from metallic ferromagnetic conductors into semiconductors. One promis
Externí odkaz:
https://doaj.org/article/5d224b57e87e4123a8cd079f9f3236e1
Autor:
Wolfgang Kuch, Tauqir Shinwari, Muhammad Sajjad, Ismet Gelen, Yasser A. Shokr, Ikramullah, Ivar Kumberg, M. Yaqoob Khan
A series of experiments is carried out to identify the contribution of interface and bulk antiferromagnetic (AFM) spins to exchange bias (EB) in ultrathin epitaxial ferromagnetic (FM)/AFM bilayer samples. These are single-crystalline AFM Ni𝑥Mn100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d1604b3fb5bb932fc8f0c6ea007940a
Autor:
Ahmet Unal, Matthias Bernien, Jan Vogel, Mustafa Erkovan, Wolfgang Kuch, Florian Kronast, Bin Zhang, Umut Parlak, Oliver Sandig, Yasser A. Shokr
Publikováno v:
Physical Review B
Physical Review B, American Physical Society, 2019, 99 (21), pp.214404. ⟨10.1103/PhysRevB.99.214404⟩
Physical Review B, American Physical Society, 2019, 99 (21), pp.214404. ⟨10.1103/PhysRevB.99.214404⟩
We present a magnetic domain-imaging study by x-ray magnetic circular dichroism photoelectron emission microscopy on a Co/Fe75Gd25 bilayer under exposure to single focused ultrashort (100 fs) infrared laser pulses. Magnetic domain walls experience a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91ff1febebc6fb1284a09928a2081653
https://hdl.handle.net/20.500.14002/416
https://hdl.handle.net/20.500.14002/416
Publikováno v:
Journal of Physics: Condensed Matter. 32:075801
The interaction between uncompensated pinned magnetic moments within an antiferromagnetic (AFM) layer and an adjacent ferromagnetic (FM) layer responsible for the existence of exchange bias is explored in epitaxially grown trilayers of the form FM2/A
Publikováno v:
AIP Advances, Vol 9, Iss 3, Pp 035016-035016-5 (2019)
A persistent challenge in the field of spintronics is the search for suitable materials that enable the circumvention of the impedance mismatch preventing efficient spin-injection from metallic ferromagnetic conductors into semiconductors. One promis
Publikováno v:
Physical Review B
Physical Review B, American Physical Society, 2016, 94 (5), pp.054414. ⟨10.1103/PhysRevB.94.054414⟩
Physical Review B, American Physical Society, 2016, 94 (5), pp.054414. ⟨10.1103/PhysRevB.94.054414⟩
International audience; We present a microscopic investigation of how the magnetic domain structure in ultrathin films changes after direct excitation by single ultrashort laser pulses. Using photoelectron emission microscopy in combination with x-ra
Publikováno v:
Physical Review B. 93
The influence of the antiferromagnetic (AFM) spin structure of epitaxial ${\mathrm{Ni}}_{0.4}{\mathrm{Mn}}_{0.6}$ films on the magnetic properties of adjacent out-of-plane-magnetized ferromagnetic (FM) Ni layers in $\text{Ni}/{\mathrm{Ni}}_{0.4}{\mat
We present a magneto-optical Kerr effect study of epitaxial bilayers consisting of Ni and NixMn1−x on Cu3Au(001). The bottom Ni layer, the NixMn1−x layer thickness and its chemical composition were changed and the Curie temperature of the system
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b1bf9c2a47d189cbb67cd24fbb7cf15
https://refubium.fu-berlin.de/handle/fub188/16876
https://refubium.fu-berlin.de/handle/fub188/16876