Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Yashesh Shroff"'
Publikováno v:
Microelectronic Engineering. 83:1245-1248
Fabricating precise freestanding metal membranes tens of nanometers thick in a continuous stack with a constant air gap of several microns is a key challenge in a free-electron extreme ultraviolet (EUV) source design program. Such a stack, when expos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b9afdecc12138fa82180f625c5183df
https://doi.org/10.1016/j.mee.2006.01.051
https://doi.org/10.1016/j.mee.2006.01.051
Autor:
Dominic Ashworth, Xibin Zhou, Patrick P. Naulleau, Yashesh Shroff, Greg Denbeaux, Yudhi Kandel, Ryan Miyakawa, Kevin Cummings, Yu-Jen Fan, Michael Goldstein
Publikováno v:
SPIE Proceedings.
We present an update of the AIS wavefront sensor, a diagnostic sensor set for insertion in the upgraded 0.5 NA SEMATECH Albany and Berkeley METs. AIS works by using offset monopole illumination to probe localized regions of the test optic pupil. Vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5e2f7d674539ff46f57368ca07b0e07
https://doi.org/10.1117/12.2048389
https://doi.org/10.1117/12.2048389
Autor:
Yijian Chen, Yashesh Shroff
Publikováno v:
SPIE Proceedings.
We present a simulation study of the near-field Extreme Ultraviolet (EUV) imaging technique to break the diffraction limit of conventional lithography for spatial frequency multiplication. Rigorous electromagnetic simulations are performed to investi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f80362697b88de789fe77e86c76dbfb
https://doi.org/10.1117/12.2045880
https://doi.org/10.1117/12.2045880
Autor:
Dominic Ashworth, Michael Goldstein, Yashesh Shroff, Xibin Zhou, Yu-Jen Fan, Ryan Miyakawa, Gregory Denbeaux, Yudhi Kandel, Patrick P. Naulleau, Kevin Cummings
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
We present a new form of optical testing for exposure tools based on measuring localized wavefront curvature. In this method, offset monopole illumination is used to probe localized regions of the test optic pupil. Variations in curvature manifest as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ef10997ac4a08249664edeb6554f850
https://doi.org/10.1117/12.2013880
https://doi.org/10.1117/12.2013880
Autor:
Kazuo Tawarayama, Hajime Aoyama, Tetsunori Murachi, Gilroy Vandentop, Takashi Kamo, Yukiyasu Arisawa, Yashesh Shroff, Toshihiko Tanaka, Ichiro Mori, Alan Myers, Yuusuke Tanaka, Taiga Uno
Publikováno v:
SPIE Proceedings.
This paper describes the critical dimension (CD) accuracy of metal-layer patterns for the 15-nm logic node and beyond replicated with model-based optical proximity correction, flare variation compensation, and shadowing effect correction. The model f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcb08573926625b28b35dbe20aa0df6b
https://doi.org/10.1117/12.878672
https://doi.org/10.1117/12.878672
Autor:
Farhad Salmassi, Eric M. Gullikson, Alan Myers, Pei-yang Yan, Manish Chandhok, Guojing Zhang, Yashesh Shroff
Publikováno v:
SPIE Proceedings.
Extreme ultra-violet Lithography (EUVL) alternating phase shift mask (APSM) or other optical enhancement techniques are likely needed for 16nm (half pitch) technology generation and beyond. One possible option is the combination of EUVL and APSM. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03b520e69fe44dac4c6e2356ff2f5995
https://doi.org/10.1117/12.884790
https://doi.org/10.1117/12.884790
Autor:
Roman Caudillo, Grant M. Kloster, Steve Putna, Alan Myers, Erik Sohmen, Terence Bacuita, Yashesh Shroff, Todd R. Younkin
Publikováno v:
SPIE Proceedings.
Since its installment in 2004, Intel's extreme ultraviolet (EUV) micro-exposure tool (MET) has demonstrated significant improvements in ultimate resolution capability. Initially capable of printing 45nm half-pitch (HP) lines with a 160nm depth of foc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e0d5b5b79d134b90f148c2e1d4b8e46
https://doi.org/10.1117/12.849142
https://doi.org/10.1117/12.849142
Autor:
Michael Goldstein, Kramadhati V. Ravi, Bryan J. Rice, Sang H. Lee, Daniel Tanzil, Yashesh Shroff
Publikováno v:
SPIE Proceedings.
The absence of a reliable non-removable pellicle is a significant obstacle in the development of EUV lithography. In this paper we present analytical and experimental results of a pellicle concept. The concept is based on the development of an EUV tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b21ebe0a2bc5b2099d1ed8248b4779a
https://doi.org/10.1117/12.656551
https://doi.org/10.1117/12.656551
Autor:
Yijian Chen, Yashesh Shroff
Publikováno v:
SPIE Proceedings.
In this paper we present analytical and simulation results on the wafer-scan induced image blur and its impact on CD control, image slope and line-edge roughness (LER), and process window in maskless lithography. It is shown that the effects of image
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74ef38b0afb877bd26e4769d33508870
https://doi.org/10.1117/12.655113
https://doi.org/10.1117/12.655113
Publikováno v:
SPIE Proceedings.
EUV lithographic tools can support the 32 nm MPU manufacturing node and beyond. In order to meet the stringent requirements on CD control and overlay for such technology generations, wavefront error and flare of the EUV exposure systems have to be we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af524e18461ec7422b4d75a2d4ea3e5e
https://doi.org/10.1117/12.604870
https://doi.org/10.1117/12.604870