Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Yarragolla, Sahitya"'
Autor:
Hemke, Torben, Struck, Robin, Yarragolla, Sahitya, Gergs, Tobias, Trieschmann, Jan, Mussenbrock, Thomas
This study presents the computational modeling and simulation of silver nanoparticle networks (NPNs), which, in the realm of neuromorphic computation, suggest to be a promising candidate for nontraditional computation methods. The modeling of the net
Externí odkaz:
http://arxiv.org/abs/2406.18666
Autor:
Yarragolla, Sahitya, Hemke, Torben, Jalled, Fares, Gergs, Tobias, Trieschmann, Jan, Arul, Tolga, Mussenbrock, Thomas
Nonlinearity is a crucial characteristic for implementing hardware security primitives or neuromorphic computing systems. The main feature of all memristive devices is this nonlinear behavior observed in their current-voltage characteristics. To comp
Externí odkaz:
http://arxiv.org/abs/2402.04848
This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A physics-inspired co
Externí odkaz:
http://arxiv.org/abs/2401.16057
A number of memristive devices, mainly ReRAMs, have been reported to exhibit a unique non-zero crossing hysteresis attributed to the interplay of resistive and not yet fully understood `capacitive', and `inductive' effects. This work exploits a kinet
Externí odkaz:
http://arxiv.org/abs/2401.14507
Autor:
Yarragolla, Sahitya, Du, Nan, Hemke, Torben, Zhao, Xianyue, Chen, Ziang, Polian, Ilia, Mussenbrock, Thomas
With the advent of the Internet of Things, nanoelectronic devices or memristors have been the subject of significant interest for use as new hardware security primitives. Among the several available memristors, BiFe$\rm O_{3}$ (BFO)-based electroform
Externí odkaz:
http://arxiv.org/abs/2210.03465
Autor:
Yarragolla, Sahitya, Hemke, Torben, Trieschmann, Jan, Zahari, Finn, Kohlstedt, Hermann, Mussenbrock, Thomas
A large number of simulation models have been proposed over the years to mimic the electrical behaviour of memristive devices. The models are based either on sophisticated mathematical formulations that do not account for physical and chemical proces
Externí odkaz:
http://arxiv.org/abs/2111.00591
Autor:
Yarragolla, Sahitya1 (AUTHOR) sahitya.yarragolla@rub.de, Du, Nan2,3 (AUTHOR) nan.du@uni-jena.de, Hemke, Torben1 (AUTHOR), Zhao, Xianyue2,3 (AUTHOR), Chen, Ziang2,3 (AUTHOR), Polian, Ilia4 (AUTHOR), Mussenbrock, Thomas1 (AUTHOR)
Publikováno v:
Scientific Reports. 11/28/2022, Vol. 12 Issue 1, p1-13. 13p.
Autor:
Yarragolla, Sahitya, Hemke, Torben, Trieschmann, Jan, Zahari, Finn, Kohlstedt, Hermann, Mussenbrock, Thomas
Publikováno v:
Journal of Applied Physics; 4/7/2022, Vol. 131 Issue 13, p1-11, 11p