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Autor:
A M Frens, JH Joachim Wolter, Maarten Leijs, W.C. van der Vleuten, Yarr Kessener, J. C. M. Henning, PM Paul Koenraad
Publikováno v:
Materials Science Forum, 143-147, 653-656. Trans Tech Publications
Photoluminescence spectra of Si d-doped GaAs show a sharp future at 1.4977 eV with phonon replicas (5.2 meV apart) due to an exciton bound to an isoelectronic centre, introduced by the delta doping procedure. A reasonable model for the isoelectronic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa1d18551723a88590f4d72ef748e988
https://doi.org/10.4028/www.scientific.net/msf.143-147.653
https://doi.org/10.4028/www.scientific.net/msf.143-147.653
