Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yaroslav A. Soloviev"'
Publikováno v:
Вестник восстановительной медицины, Vol 20, Iss 4, Pp 126-132 (2021)
Currently, an infectious corneal ulcer, a defect in the corneal epithelium, remains one of the main causes of monocular blindness,which necessitates the development of new effective methods of treatment. Aim. To develop and evaluate the effectivenes
Externí odkaz:
https://doaj.org/article/eda0b888dc014edf99abd6157f93ee74
Autor:
Vladimir B. Odzaev, Aliaksandr N. Pyatlitski, Uladislau S. Prasalovich, Natalya S. Kovalchuk, Yaroslav A. Soloviev, Dmitry V. Shestovski, Valentin Yu. Yavid, Yuri N. Yankovski
Publikováno v:
Journal of the Belarusian State University. Physics. :81-92
The electrical characteristics of power MOSFETs additionally implanted with nitrogen ions have been studied. Ion implantation of nitrogen was carried out through a protective oxide of 23 nm thickness with energies of 20 and 40 keV and doses of 1 ⋅
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cca80bef6c76eda061498ce0fa8e1472
https://doi.org/10.33581/2520-2243-2022-3-81-92
https://doi.org/10.33581/2520-2243-2022-3-81-92
Publikováno v:
Bulletin of Rehabilitation Medicine. 20:126-132
Currently, an infectious corneal ulcer, a defect in the corneal epithelium, remains one of the main causes of monocular blindness,which necessitates the development of new effective methods of treatment. Aim. To develop and evaluate the effectiveness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4eb58ba0d7a1ee611c955bc5fc6dba3
https://doi.org/10.38025/2078-1962-2021-20-4-126-132
https://doi.org/10.38025/2078-1962-2021-20-4-126-132
Autor:
Aliaksandr N. Pyatlitski, Dmitry V. Shestovski, Uladislau S. Prasalovich, Viktar A. Filipenia, Anatoli K. Panfilenka, N. S. Kovalchuk, Vladimir B. Odzaev, Yaroslav A. Soloviev
Publikováno v:
Journal of the Belarusian State University. Physics. :55-64
Power MOS-transistors with vertical structure are investigated. Additionally, in some devices, ion implantation of nitrogen with energies of 20 and 40 keV was carried out in a dose range of 1 ⋅1013–5 ⋅ 1014 cm –2 through a sacrificial oxide 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1317caf425e69ef4b3305f4efd3f570e
https://doi.org/10.33581/2520-2243-2020-3-55-64
https://doi.org/10.33581/2520-2243-2020-3-55-64