Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Yariv Drezner"'
Publikováno v:
Microelectronic Engineering. 155:19-24
The most critical challenge of circuit edit is the scaling of nano-machined features to the ever-decreasing minimum dimensions of VLSI process technologies. A key enabler for achieving small nano-machined feature sizes is a narrow focused ion beam (F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d06e8aa57c1967ba977bf8fcc320ff51
https://doi.org/10.1016/j.mee.2016.01.016
https://doi.org/10.1016/j.mee.2016.01.016
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:011801
The predominant challenge of nanomachining by focused ion beam (FIB) is the generational down-scaling of minimum dimensions of cutting-edge technologies such as very large scale integration (VLSI) process technology. To keep pace with feature size re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db329e5d370a9980b16e1fe62c7457f8
https://doi.org/10.1116/1.4972050
https://doi.org/10.1116/1.4972050
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34:061203
In this paper, the authors studied the interaction of 14.5 keV accelerated Cs+ ion interaction with commonly used materials in the microelectronic industry. The motivation of this work was to examine the suitability of cesium as a future ion candidat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a1a4e40888d1ccf76e4a9ba05879ef3
https://doi.org/10.1116/1.4963896
https://doi.org/10.1116/1.4963896
Autor:
Chris Scheffler, Yariv Drezner, Richard H. Livengood, Shida Tan, Yuval Greenzweig, Roy Hallstein
Publikováno v:
International Symposium for Testing and Failure Analysis.
The requirements for focused ion beam (FIB) systems to provide higher image resolution and machining precision continue to increase with the continuation of Moore’s Law. Due to the shrinking geometry and increasing complex structures and materials,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec510a93b60ee55b551425460b053a70
https://doi.org/10.31399/asm.cp.istfa2012p0436
https://doi.org/10.31399/asm.cp.istfa2012p0436
Autor:
Yariv Drezner, Daniel Fishman, Richard H. Livengood, Yuval Greenzweig, Diederik Maas, Amir Raveh, Emile van Veldhoven
Publikováno v:
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 4, 30
In this paper we studied helium ion beam induced deposition (HIBID) of Pt on a silicon wafer using the recently commercialized helium ion microscope (HIM) at 25 kV and low beam currents. The motivation of this work was to understand the impact of lig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e3a6448190772a9b836c33e22d1b355
http://resolver.tudelft.nl/uuid:ba9ae2db-fbc3-4a90-a7fa-4a0bca5c6d27
http://resolver.tudelft.nl/uuid:ba9ae2db-fbc3-4a90-a7fa-4a0bca5c6d27
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30:06F606
Focused ion beam technology continues to scale into the nano regime to keep pace with the scaling of semiconductor processes and biological science research. As the requirements for higher image resolution and machining precision increase, the necess
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cbe3f289e74affdf3e6780f3b2add36
https://doi.org/10.1116/1.4766882
https://doi.org/10.1116/1.4766882
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30:011207
Both selective and nonselective focused ion beam (FIB) processes have become critical for enabling fine-scale activities such as nano-machining and nano-fabrication in compound material removal applications. In this paper, we investigate the influenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::735da5200032d0abe5b95e7174703ef0
https://doi.org/10.1116/1.3674280
https://doi.org/10.1116/1.3674280
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29:021202
Postsilicon debug techniques may require e-beam imaging and nanomachining in the vicinity of live metal-oxide semiconductor (MOS) devices. In that context the authors have investigated the invasiveness of e-beam irradiation on MOS devices to 65 nm in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::539983aa74bf07d969d22cd76d045393
https://doi.org/10.1116/1.3554904
https://doi.org/10.1116/1.3554904
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29:011026
In this paper we studied three major issues that have challenged focused ion beam (FIB) circuit edit practices: via overetching, via composition which affects via resistance, and uniformity of via fill. These issues may become critical as minimal cir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24e43ca81087abab88e1a169c2271751
https://doi.org/10.1116/1.3539204
https://doi.org/10.1116/1.3539204