Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Yaren Huang"'
Publikováno v:
Materials Science Forum. 1004:1088-1096
This work aims at extending the predictive simulation technique for cosmic ray-induced failure analysis from Si PiN diodes [1] to SiC PiN diodes. Accurate 3D cylindrical-symmetric transient simulations were performed with a minimum mesh size of 20nm
Temperature Dependence of the Bipolar Activation and the Leakage Currents of 10 kV 4H-SiC JBS-Diodes
Publikováno v:
Materials Science Forum. 1004:953-959
The activation of bipolar conduction was investigated for two 4H-SiC 10 kV JBS-diodes which differ in the area ratio between p-doped and n-doped regions (Ws/WPin). Quasi-static measurements at low electric current densities (j < 2.5 Acm-2) were perfo
Publikováno v:
Materials Science Forum. 963:553-557
The wide band gap of SiC semiconductor devices constitutes a serious challenge to build good Ohmic contacts on the surface of the p-type material. This is reflected in the numerical analysis of ”realistic” devices, where we have to cope with seri
Publikováno v:
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
The temperature dependent behaviour of a high power 4H-SiC PiN-diode was investigated by the adjustment of measured forward characteristics and quasistatic TCAD simulations in a temperature range from RT up to 773 K. The systematic analysis of the re
Publikováno v:
ECS Transactions. 52:853-858
This paper presents a design of the sensor array that helps to determine the location of the failed circuit on the chip when external EMI is applied to an IC. A scheme of the feedback signal for the failure location detection is developed. The transi
Autor:
Yaren Huang, Gerhard Wachutka
Publikováno v:
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
The forward characteristics of MPS diodes is composed of two branches: the first one is determined by unipolar conductivity originating from the Schottky contact, while the second one arises from hole injection by the Ohmic contact. A high ratio W s
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
There is a trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes. This paper explains the physical mechanisms underlying this trade-off and identifies the relevant design parameters. The dependencies