Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Yarekha, D.A."'
Autor:
Reckinger, N., Duţu, C.A., Tang, X., Dubois, E., Yarekha, D.A., Godey, S., Nougaret, L., Łaszcz, A., Ratajczak, J., Raskin, J.-P.
Publikováno v:
In Thin Solid Films 30 April 2012 520(13):4501-4505
Publikováno v:
In Journal of Crystal Growth 2007 301:217-220
Publikováno v:
In Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 2002 58(11):2405-2412
Autor:
Reckinger, N., Tang, X.H., Bayot, V., Yarekha, D.A., Dubois, E., Godey, S., Wallart, X., Larrieu, G., Laszcz, A., Ratajczak, J., Jacques, P.J., Raskin, J.P.
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2009, 94, pp.191913-1-3. ⟨10.1063/1.3136849⟩
Applied Physics Letters, 2009, 94 (19), pp.191913. ⟨10.1063/1.3136849⟩
Applied Physics Letters, Vol. 94, no. 19 (2009)
Applied Physics Letters, American Institute of Physics, 2009, 94, pp.191913-1-3. ⟨10.1063/1.3136849⟩
Applied Physics Letters, 2009, 94 (19), pp.191913. ⟨10.1063/1.3136849⟩
Applied Physics Letters, Vol. 94, no. 19 (2009)
The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::efafe29f3fd276c3f1f912be905e06f2
https://hal.archives-ouvertes.fr/hal-00471985
https://hal.archives-ouvertes.fr/hal-00471985
Autor:
Yarekha, D.A., Larrieu, G., Dubois, E., Godey, S., Wallart, X., Soyer, Caroline, Remiens, Denis, Reckinger, N., Tang, Xing, Laszcz, A., Ratajczak, J.
Publikováno v:
Journées Nationales sur les Technologies Emergentes en Micro-nanofabrication, JNTE 08
Journées Nationales sur les Technologies Emergentes en Micro-nanofabrication, JNTE 08, 2008, Toulouse, France
Journées Nationales sur les Technologies Emergentes en Micro-nanofabrication, JNTE 08, 2008, Toulouse, France
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::13ab4220ec22dbfc3b7434c87399d6a5
https://hal.archives-ouvertes.fr/hal-00361550
https://hal.archives-ouvertes.fr/hal-00361550
Publikováno v:
IEE Proceedings Optoelectronics
IEE Proceedings Optoelectronics, Institution of Engineering and Technology, 2003, 150 (4), pp.310-313. ⟨10.1049/ip-opt:20030674⟩
IEE Proceedings Optoelectronics, Institution of Engineering and Technology, 2003, 150 (4), pp.310-313. ⟨10.1049/ip-opt:20030674⟩
International audience; A study of the effects of the injected current and the thermal resistance on the tunability of antimonide-based diode lasers is presented. The studied diode lasers, emitting at around 2.3 μm, are dedicated to gas detection in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::1e76618abce558d17a23056cb2921ece
https://hal.archives-ouvertes.fr/hal-00327150
https://hal.archives-ouvertes.fr/hal-00327150
Publikováno v:
IEE Proceedings -- Optoelectronics. Aug2003, Vol. 150 Issue 4, p310-313. 4p.
Publikováno v:
Electronics Letters (Institution of Engineering & Technology). 7/24/2003, Vol. 39 Issue 15, p1123-1125. 3p.
Publikováno v:
2008 20th International Conference on Indium Phosphide & Related Materials; 2008, p1-3, 3p
Autor:
Perona, A., Rouillard, Y., Salhi, A., Grech, P., Chevrier, F., Yarekha, D.A., Garnache, A., Baranov, A.N., Alibert, C.
Publikováno v:
Conference Proceedings 14th Indium Phosphide & Related Materials Conference (Cat. No.02CH37307); 2002, p743-745, 3p