Zobrazeno 1 - 10
of 93
pro vyhledávání: '"Yara Galvão Gobato"'
Autor:
Marcelo Assis, Renan Augusto Pontes Ribeiro, Maria Helena Carvalho, Mayara Mondego Teixeira, Yara Galvão Gobato, Gabriela Augusta Prando, Cleber Renato Mendonça, Leonardo de Boni, Adilson Jesus Aparecido de Oliveira, Jefferson Bettini, Juan Andrés, Elson Longo
Publikováno v:
ACS Omega, Vol 5, Iss 17, Pp 10052-10067 (2020)
Externí odkaz:
https://doaj.org/article/f19aa3a765a34a8b80b4ad29fabb8ecd
Autor:
Marcelo Rizzo Piton, Teemu Hakkarainen, Joonas Hilska, Eero Koivusalo, Donald Lupo, Helder Vinicius Avanço Galeti, Yara Galvão Gobato, Mircea Guina
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-7 (2019)
Abstract The performance of Ohmic contacts applied to semiconductor nanowires (NWs) is an important aspect for enabling their use in electronic or optoelectronic devices. Due to the small dimensions and specific surface orientation of NWs, the standa
Externí odkaz:
https://doaj.org/article/f5a3ec259f604fb490c08b3066b39099
Autor:
Saud Alotaibi, Marcio A. Correa, Madani labed, Abdulaziz lmalki, Sultan Saleh Alhassan, Maryam Al Huwayz, Yara Galvão Gobato, Hassanet Sodabanlu, M. Sugiyama, Helder Vinicius Avanço Galeti, Nouredine Sengouga, Mohamed Henini
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f16c30c5b9071a7a1d0de7a9d2878b6
https://doi.org/10.2139/ssrn.4409071
https://doi.org/10.2139/ssrn.4409071
Autor:
Gabriela Augusta Prando, Marion E. Severijnen, Ingrid D. Barcelos, Uli Zeitler, Peter C. M. Christianen, Freddie Withers, Yara Galvão Gobato
Publikováno v:
Physical Review Applied, 16, 6, pp. 1-9
Physical Review Applied, 16, 1-9
Physical Review Applied, 16, 1-9
Contains fulltext : 244692.pdf (Publisher’s version ) (Open Access)
Autor:
Gladys Mínguez-Vega, Marcelo Assis, Daniele de Souza, Elson Longo, Juan Andrés, Mayara Mondego Teixeira, Héctor Beltrán-Mir, Miroslav Černík, Yara Galvão Gobato, Rafael Torres-Mendieta, Eloisa Cordoncillo
Publikováno v:
The Journal of Physical Chemistry C. 124:26404-26414
The formation of heterojunctions between semiconductors with distinct properties usually expands their capabilities. In this context, many methodologies have been employed in pursuing efficient and fruitful heterojunctions. However, poor attention ha
Autor:
Cláudio José Magon, José Pedro Donoso, Douglas F. Franco, Eduar E. Carvajal, Selma Gutierrez Antonio, Danilo Manzani, Yara Galvão Gobato, Gabriela Augusta Prando, Marcelo Nalin
Publikováno v:
Scopus
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Made available in DSpace on 2020-12-12T01:24:05Z (GMT). No. of bitstreams: 0 Previous issue date: 2020-08-01 Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) A set of glass samples with composition based on ternary 50P2O5–30Na2O–
Autor:
Aline B. Trench, Roman Alvarez, Vinícius Teodoro, Letícia G. da Trindade, Thales R. Machado, Mayara M. Teixeira, Daniele de Souza, Ivo M. Pinatti, Alexandre Z. Simões, Yara Galvão Gobato, Juan Andrés, Elson Longo
Publikováno v:
Repositori Universitat Jaume I
Universitat Jaume I
Scopus
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
Universitat Jaume I
Scopus
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
Made available in DSpace on 2022-05-01T13:41:35Z (GMT). No. of bitstreams: 0 Previous issue date: 2022-03-15 Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6dd94169e85e37fbeec2f7526ad915f7
https://doi.org/10.1016/j.matchemphys.2022.125710
https://doi.org/10.1016/j.matchemphys.2022.125710
Autor:
Abdulaziz Almalki, Labed Madani, Nouredine Sengouga, Sultan Saleh Alhassan, Saud Alotaibi, Amra Alhassni, Amjad Almunyif, Jasbinder Chauhan, Mohamed Henini, Helder Vinicius Avanço Galeti, Yara Galvão Gobato, Marcio Peron Franco de Godoy, Marcelo Barbosa de Andrade, Sérgio Souto, Hong Zhou, Boyan Wang, Ming Xiao, Yuan Qin, Yuhao Zhang
Publikováno v:
SSRN Electronic Journal.
Autor:
Capucine Tong, Thomas Bidaud, Eero Koivusalo, Marcelo Rizzo Piton, Mircea Guina, Helder Vinicius Avanço Galeti, Yara Galvão Gobato, Andrea Cattoni, Teemu Hakkarainen, Stéphane Collin
Publikováno v:
Nanotechnology. 33(18)
Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si
Autor:
Caique Serati de Brito, Cesar Ricardo Rabahi, Marcio Daldin Teodoro, Douglas F. Franco, Marcelo Nalin, Ingrid D. Barcelos, Yara Galvão Gobato
Publikováno v:
Applied Physics Letters. 121:070601
Strain engineering is a powerful tool for generating single-photon emitters in monolayer (ML) transition metal dichalcogenides. Here, we report on a simple method for generating sharp emission lines (linewidths ≈ 150–500 μeV) in a monolayer (ML)