Zobrazeno 1 - 10 of 10 pro vyhledávání: '"Yaqiang Liao"'
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Akademický článek
Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
Autor: Geoffrey Avit, Yoann Robin, Yaqiang Liao, Hu Nan, Markus Pristovsek, Hiroshi Amano
Publikováno v: Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract GaN nanorods (NRds) with axial InGaN/GaN MQWs insertions are synthesized by an original cost-effective and large-scale nanoimprint-lithography process from an InGaN/GaN MQWs layer grown on c-sapphire substrates. By design, such NRds exhibit
Externí odkaz: https://doaj.org/article/253098597fe742d18e9f6715bdbd8a1c
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2
Ohmic Contact to p-Type GaN Enabled by Post-Growth Diffusion of Magnesium
Autor: Wentao Cai, Hiroshi Amano, Takeru Kumabe, Yoshio Honda, Jia Wang, Yuto Ando, Shun Lu, Ya-Hong Xie, Yaqiang Liao
Publikováno v: IEEE Electron Device Letters. 43:150-153
We demonstrated 1 the formation of excellent Ohmic contact to p-type GaN (including the plasma etching-damaged p-type GaN which otherwise exhibited undetectable current within 15V) by the post-growth diffusion of magnesium. The specific contact resis
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c1e56e2f9ac88f659c921e35ecdb253
https://doi.org/10.1109/led.2021.3131057
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3
Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
Autor: Hu Nan, Yaqiang Liao, Yoann Robin, Geoffrey Avit, Markus Pristovsek, Hiroshi Amano
Publikováno v: Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Scientific Reports
GaN nanorods (NRds) with axial InGaN/GaN MQWs insertions are synthesized by an original cost-effective and large-scale nanoimprint-lithography process from an InGaN/GaN MQWs layer grown on c-sapphire substrates. By design, such NRds exhibit a single
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62d3879cebb3a5e60deebfae10f0008d
https://doaj.org/article/253098597fe742d18e9f6715bdbd8a1c
Zobrazit plný text záznamu
4
High In content nitride sub-micrometer platelet arrays for long wavelength optical applications
Autor: Wentao Cai, Yuta Furusawa, Jia Wang, Jeong-Hwan Park, Yaqiang Liao, Hea-Jeong Cheong, Shugo Nitta, Yoshio Honda, Markus Pristovsek, Hiroshi Amano
Publikováno v: Applied Physics Letters. 121:211105
We demonstrate high, up to 30% In content InGaN sub-micrometer platelets on GaN by metalorganic vapor phase epitaxy. These InGaN platelets were selectively grown on flat GaN seeds formed in sub-micrometer-scale openings in a SiNx mask. The platelets
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9ea9c035ed7f1ef0aa8be1db86a5fbf1
https://doi.org/10.1063/5.0120723
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5
Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process
Autor: Yaqiang Liao, Tao Chen, Jia Wang, Wentao Cai, Yuto Ando, Xu Yang, Hirotaka Watanabe, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Kevin J. Chen, Hiroshi Amano
Publikováno v: Applied Physics Letters. 120:122109
In this work, a deliberate etching-based top-down approach is proposed to fabricate the GaN nanorod (NR) Schottky barrier diode (SBD). As a key step during the fabrication, the impact of the wet-etching process on device performance is systematically
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c3efdb98776477d8aaff906a3e15c2e3
https://doi.org/10.1063/5.0083194
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6
Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes
Autor: Tao Chen, Shugo Nitta, Hirotaka Watanabe, Jia Wang, Jun Hirotani, Yaqiang Liao, Maki Kushimoto, Manato Deki, Yuto Ando, Hiroshi Amano, Yoshio Honda, Xu Yang, Atsushi Tanaka, Kevin J. Chen
Publikováno v: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In this work, gallium nitride (GaN) nanowire (NW) Schottky barrier diodes was fabricated using well-optimized top-down approach. As-fabricated $100 \times 800$-nm-diameter NWs SBD with high current density over 1kA/cm2 at a forward bias of 2.2V, a lo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1045e13eb1ec9212eec48fe1370a9e44
https://doi.org/10.1109/ispsd46842.2020.9170101
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8
Non-polar true-lateral GaN power diodes on foreign substrates
Autor: Guo Yu, Jia Wang, Wentao Cai, Xiaodong Hu, Hua Zong, Ya-Hong Xie, Yaqiang Liao, Hiroshi Amano, Weifang Lu
Publikováno v: Applied Physics Letters. 118:212102
We have demonstrated non-polar GaN power diodes (Schottky barrier diode and p–n junction diode) on foreign substrates featuring the true-lateral p–n and metal–semiconductor junctions. The diodes were fabricated on GaN islands laterally overgrow
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4ab10a4e8774936c7c8c60b478f75761
https://doi.org/10.1063/5.0051552
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