Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Yaozong Zhong"'
Autor:
Xinkun Zhang, Haoran Qie, Yu Zhou, Yaozong Zhong, Jianxun Liu, Quan Dai, Qian Li, Xiaoning Zhan, Xiaolu Guo, Xin Chen, Qian Sun, Hui Yang
Publikováno v:
Applied Physics Express, Vol 17, Iss 9, p 096501 (2024)
The degradation of an n ^++ GaN regrown ohmic contact in a MIS-HEMT device induced by ion beam etching (IBE) damages and relevant mechanisms have been studied. Abnormal I–V behaviors of the etched n ^++ GaN were observed by the transfer length meth
Externí odkaz:
https://doaj.org/article/b33ac63382fd49e9b8b87a3deb3ff8ad
Publikováno v:
Fundamental Research, Vol 2, Iss 3, Pp 462-475 (2022)
The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate. This article provides a concise introduction, review, and outlook of the research developments of GaN-on-Si power device technology.
Externí odkaz:
https://doaj.org/article/a7c0f698b5e64e4886f7cd43341c10ef
Publikováno v:
Micromachines, Vol 13, Iss 3, p 466 (2022)
In this paper, thermoreflectance microscopy was used to measure the high spatial resolution temperature distribution of the p-GaN HEMT under high power density. The maximum temperature along the GaN channel was located at the drain-side gate edge reg
Externí odkaz:
https://doaj.org/article/cd82073e9e394fb981bd78257938d9ba
Autor:
Yu Zhou, Yaozong Zhong, Hongwei Gao, Shujun Dai, Junlei He, Meixin Feng, Yanfei Zhao, Qian Sun, An Dingsun, Hui Yang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 5, Pp 340-346 (2017)
An enhancement-mode high-electron-mobility transistor with a p-GaN gate was fabricated by using a chemistry-ease Cl2/N2/O2-based inductively coupled plasma etching technique. This etching technique features a precise etching self-termination at the A
Externí odkaz:
https://doaj.org/article/c83b78dcd76d4e3196e9420e20d4f2d7
Autor:
Shumeng Yan, Yu Zhou, Jianxun Liu, Yaozong Zhong, Xiujian Sun, Xin Chen, Xiaolu Guo, Qian Li, Qian Sun, Hui Yang
Publikováno v:
IEEE Transactions on Electron Devices. 70:1613-1621
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed9e711f2be296b20b86d672623e545a
https://doi.org/10.1109/ted.2023.3243585
https://doi.org/10.1109/ted.2023.3243585
Autor:
Xiaolu Guo, Yaozong Zhong, Yu Zhou, Xin Chen, Shumeng Yan, Jianxun Liu, Xiujian Sun, Qian Sun, Hui Yang
Publikováno v:
IEEE Electron Device Letters. 43:2057-2060
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4475a14f4a3809d90e71db65536edae
https://doi.org/10.1109/led.2022.3219103
https://doi.org/10.1109/led.2022.3219103
Autor:
Hao Jin, Qimeng Jiang, Sen Huang, Xinhua Wang, Yingjie Wang, Zhongchen Ji, Xinyue Dai, Chao Feng, Jie Fan, Ke Wei, Jianxun Liu, Yaozong Zhong, Qian Sun, Xinyu Liu
Publikováno v:
IEEE Electron Device Letters. 43:1191-1194
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3369a13b9cc82b543773f9672aba05d0
https://doi.org/10.1109/led.2022.3184998
https://doi.org/10.1109/led.2022.3184998
Autor:
Jianxun Liu, Hui Yang, Xin Chen, Xiujian Sun, Yu Zhou, Yaozong Zhong, Shumeng Yan, Qian Sun, Xiaolu Guo, Shuai Su
Publikováno v:
IEEE Transactions on Electron Devices. 68:5682-5686
This work demonstrates a novel Nitrogen-implanted (N-implanted) guard ring (GR) technology for the 600-V quasi-vertical GaN-on-Si Schottky barrier diode (SBD). The GR parameters are designed and studied in detail by the TCAD simulation. With a 4.4- $
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a11aaf52aa55d4b24f380b4c25a18a06
https://doi.org/10.1109/ted.2021.3108951
https://doi.org/10.1109/ted.2021.3108951
Autor:
Shuming Zhang, Hui Yang, Xin Chen, Yaozong Zhong, Yu Zhou, Xiaolu Guo, Xiaoning Zhan, Shuai Su, Qian Sun, Hongwei Gao
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 9:3715-3724
Gate reliability and its degradation mechanism were studied for the normally off high-electron-mobility transistors (HEMTs) with regrown p-GaN gate and AlN/SiN x stack passivation. Through comparing the forward leakage current in two designed structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::600d5d7d16b703312512821e17003d83
https://doi.org/10.1109/jestpe.2020.3014372
https://doi.org/10.1109/jestpe.2020.3014372
Autor:
Jianxun Liu, Xiaolu Guo, Xin Chen, Yaozong Zhong, Xiujian Sun, Yu Zhou, Hui Yang, Junlei He, Qi Zhou, Shuai Su, Qian Sun, Hongwei Gao
Publikováno v:
IEEE Electron Device Letters. 42:473-476
A high-performance quasi-vertical GaN Schottky barrier diode (SBD) was successfully fabricated by using a high-quality n−-GaN drift layer with a precisely-controlled n-type doping. A high current on/off ratio of 1010, an ideality factor of 1.03, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24873343d63e9814539b6cdc50e90bc3
https://doi.org/10.1109/led.2021.3058380
https://doi.org/10.1109/led.2021.3058380