Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Yaoqi, Dong"'
Publikováno v:
Frontiers in Energy. 17:176-187
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ab01bf5785510e2bf3809024740ddc6
https://doi.org/10.1007/s11708-022-0836-6
https://doi.org/10.1007/s11708-022-0836-6
Autor:
Elaine Zou, Qijian Wan, Lucas Huang, Chunlei Zhang, Jenny Pang, Chunshan Du, YaoQi Dong, Xinyi Hu, Legender Yang
Publikováno v:
SPIE Proceedings.
There is an increasing demand for device level layout analysis, especially as technology advances. The analysis is to study standard cells by extracting and classifying critical dimension parameters. There are couples of parameters to extract, like c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15dc1e770462748dd1ad03fc1a86e3ec
https://doi.org/10.1117/12.2257895
https://doi.org/10.1117/12.2257895
Autor:
Jun He, Ching-Dong Wang, Yaoqi Dong, Wei-Ran Kong, Jun Wang, Xiaohua Cheng, Zhenhai Sun, Liu-Jiang Yu, Rui Li
Publikováno v:
Microelectronic Engineering. 88:3270-3274
The removal of silicide-block-film is crucial for device stability, reliability and subsequent silicide formation. In this paper, various silicide block etch processes, i.e. dry and wet etch, were studied and compared. Possible plasma charging damage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::955dbeac2c6f123fae7cb4ad3df13496
https://doi.org/10.1016/j.mee.2011.06.028
https://doi.org/10.1016/j.mee.2011.06.028
DEGRADATION AND RECOVERY OF POLARIZATION UNDER γ RAYS IN Bi3.15Nd0.85Ti3O12 FERROELECTRIC CAPACITORS
Publikováno v:
Integrated Ferroelectrics. 98:105-112
Bi3.15Nd0.85Ti3O12 thin films of mixed orientations were grown on Pt/Ti/SiO2/Si substrates using the sol-gel method. The film annealed at 750°C is composed of grains with sizes of 450 nm. The samples were exposed on different doses of gamma rays. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faeb91daff39669d3c87f451524fda80
https://doi.org/10.1080/10584580802092472
https://doi.org/10.1080/10584580802092472
Publikováno v:
Solid-State Electronics. 54:579-581
In this paper, a method is proposed to enhance the self-aligned split-gate flash cell performance. Utilizing the different oxidation rate between silicon substrate and the heavily-doped poly-silicon sidewall of the floating gate, a rapid-thermal-oxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf1eb08810afe42920b9477e86441eb0
https://doi.org/10.1016/j.sse.2009.12.023
https://doi.org/10.1016/j.sse.2009.12.023
Publikováno v:
Journal of Semiconductors; Jun2010, Vol. 31 Issue 6, p064012-064015, 4p
Publikováno v:
Integrated Ferroelectrics; 2008, Vol. 98 Issue 1, p105-112, 8p, 1 Diagram, 6 Graphs