Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Yaofeng Yi"'
Publikováno v:
IEEE Access, Vol 12, Pp 56414-56421 (2024)
We reported a thermal investigation on a photodetector (PD) with a sandwiched structure comprising p-type, intrinsic, and n-type (PIN-PD) layers based on Williams’ thermal model. Simulations and measurements of the photocurrent in the linear region
Externí odkaz:
https://doaj.org/article/4517d33883504aa293c974c352af74b0
Publikováno v:
IEEE Access, Vol 12, Pp 22813-22820 (2024)
In this study, we proposed a novel design for fabricating a unitraveling carrier–type photodetector using In0.52Al0.48As as the collector material. The proposed InAlAs photodetector is based on the structure of a conventional unitraveling carrier
Externí odkaz:
https://doaj.org/article/e85dfa1e0ed44028a69126f6f89cdeb8
Publikováno v:
2022 27th OptoElectronics and Communications Conference (OECC) and 2022 International Conference on Photonics in Switching and Computing (PSC).
Publikováno v:
Applied Physics Express. 11:075104
We propose a method of realizing a quantum topological transistor in AB-stacked bilayer graphene with Rashba spin–orbit interaction (RSOI) and interlayer bias voltage. It is found that electrons in the proposed device are transmitted in the channel
Publikováno v:
AIP Advances, Vol 6, Iss 9, Pp 095002-095002-10 (2016)
Based on the time-nonlocal particle number-resolved master equation, we investigate the sequential electron transport through the interacting double quantum dots. Our calculations show that there exists the effect of energy renormalization in the dis
Externí odkaz:
https://doaj.org/article/054de9ddc8cb40e9ba0fa89638cad610
Publikováno v:
Applied Physics Express; Jul2018, Vol. 11 Issue 7, p1-1, 1p