Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Yaofeng Yi"'
Publikováno v:
IEEE Access, Vol 12, Pp 56414-56421 (2024)
We reported a thermal investigation on a photodetector (PD) with a sandwiched structure comprising p-type, intrinsic, and n-type (PIN-PD) layers based on Williams’ thermal model. Simulations and measurements of the photocurrent in the linear region
Externí odkaz:
https://doaj.org/article/4517d33883504aa293c974c352af74b0
Publikováno v:
IEEE Access, Vol 12, Pp 22813-22820 (2024)
In this study, we proposed a novel design for fabricating a unitraveling carrier–type photodetector using In0.52Al0.48As as the collector material. The proposed InAlAs photodetector is based on the structure of a conventional unitraveling carrier
Externí odkaz:
https://doaj.org/article/e85dfa1e0ed44028a69126f6f89cdeb8
Publikováno v:
2022 27th OptoElectronics and Communications Conference (OECC) and 2022 International Conference on Photonics in Switching and Computing (PSC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c49ade5b563c391f6fd74b8ff544abc4
https://doi.org/10.23919/oecc/psc53152.2022.9849985
https://doi.org/10.23919/oecc/psc53152.2022.9849985
Publikováno v:
Applied Physics Express. 11:075104
We propose a method of realizing a quantum topological transistor in AB-stacked bilayer graphene with Rashba spin–orbit interaction (RSOI) and interlayer bias voltage. It is found that electrons in the proposed device are transmitted in the channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c550f235ec2155d2f369da5116c89efd
https://doi.org/10.7567/apex.11.075104
https://doi.org/10.7567/apex.11.075104
Publikováno v:
Applied Physics Express; Jul2018, Vol. 11 Issue 7, p1-1, 1p